SI4812DY [VISHAY]
N-Channel 30-V (D-S) MOSFET with Schottky Diode; N通道30 -V （ D- S）的MOSFET与肖特基二极管
| 型号： | SI4812DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D LITTLE FOOTr Plus Power MOSFET
D 100% Rg Tested
0.018 @ V = 10 V
9
GS
30
0.028 @ V = 4.5 V
7.3
GS
SCHOTTKY PRODUCT SUMMARY
VSD (V)
Diode Forward Voltage
VDS (V)
IF (A)
30
0.50 V @ 1.0 A
1.4
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY—E3 (Lead (Pb)-Free)
Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Schottky Diode
G
N-Channel MOSFET
Top View
S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limit
10 sec
Steady State
Parameter
Symbol
Unit
Drain-Source Voltage (MOSFET)
30
30
V
DS
Reverse Voltage (Schottky)
V
Gate-Source Voltage (MOSFET)
V
GS
"20
T
= 25_C
= 70_C
6.9
5.6
9
A
a, b
Continuous Drain Current (T = 150_C) (MOSFET)
I
J
D
T
A
7.5
Pulsed Drain Current (MOSFET)
I
I
50
30
DM
A
a, b
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
I
S
2.1
1.4
1.2
0.8
I
F
Pulsed Foward Current (Schottky)
FM
T
= 25_C
= 70_C
= 25_C
= 70_C
2.5
1.6
2.0
1.3
1.4
0.9
1.2
0.8
A
a, b
Maximum Power Dissipation (MOSFET)
T
A
P
W
D
T
A
a, b
Maximum Power Dissipation (Schottky)
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
MOSFET
Schottky
MOSFET
Schottky
40
50
72
85
50
60
a
Maximum Junction-to-Ambient (t v 10 sec)
R
thJA
C/W
90
a
Maximum Junction-to-Ambient (t = steady state)
100
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
1
Si4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1
3
V
GS(th)
DS
GS
D
V
= 0 V, V = "20 V
GS
I
DS
"100
nA
GSS
V
= 30 V, V = 0 V
0.004
0.7
0.100
10
DS
GS
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
V
V
= 30 V, V = 0 V, T = 100_C
I
mA
DS
GS
J
DSS
= 30 V, V = 0 V, T = 125_C
3.0
20
DS
GS
J
a
On-State Drain Current
I
V
DS
w 5 V, V = 10 V
20
A
W
S
V
D(on)
GS
V
= 10 V, I = 9 A
0.012
0.019
0.018
0.028
GS
D
a
Drain-Source On-State Resistance
r
DS(on)
V
= 4.5 V, I = 7.3 A
D
GS
a
Forward Transconductance
g
fs
V
= 15 V, I = 9 A
23
DS
D
I
S
= 1.0 A, V = 0 V
0.45
0.33
0.50
0.42
GS
a
Schottky Diode Forward Voltage
V
SD
I
S
= 1.0 A, V = 0 V, T = 125_C
GS
J
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
13
4
24
g
Q
Q
V
= 15 V, V = 5 V, I = 9 A
nC
gs
gd
DS
GS
D
5.7
R
g
0.2
2.4
25
20
50
20
70
W
t
16
10
35
13
35
d(on)
t
r
V
= 15 V, R = 15 W
L
GEN g
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = 1.0 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
2
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 5 V
40
30
20
10
0
4 V
T
= 125_C
C
3 V
25_C
−55_C
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1800
1500
1200
900
600
300
0
0.10
0.08
0.06
0.04
0.02
0.00
C
iss
C
oss
V
GS
= 4.5 V
C
rss
V
GS
= 10 V
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
GS
= 10 V
DS
I
= 9 A
I = 9 A
D
6
4
2
0
0
5
10
15
20
25
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
J
− Junction Temperature (_C)
g
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
3
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.10
0.08
0.06
0.04
0.02
0.00
T
= 150_C
J
10
I
D
= 9.0 A
T
= 25_C
J
1
0.1
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
SD
Reverse Current (Schottky)
Single Pulse Power (MOSFET)
50
40
30
20
10
0
20
10
1
30 V
0.1
10 V
0.01
0.001
20 V
0.0001
0
25
T
50
75
100
125
150
0.01
0.1
1
10
100
600
− Junction Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 72_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
4
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
5
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