SI4835BDY-E3 [VISHAY]
Transistor;
VISHAY 
Si4835BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
D Advanced High Cell Density Process
D 100% Rg Tested
APPLICATIONS
0.018 @ V = −10 V
−9.6
−7.5
GS
−30
−25
0.030 @ V = −4.5
V
GS
D Load Switches
− Notebook PCs
− Desktop PCs
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
P-Channel MOSFET
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
Si4835BDY—E3 (Lead (Pb)-Free)
Si4835BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"25
T
= 25_C
= 70_C
−7.4
−5.9
−9.6
−7.7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−50
a
continuous Source Current (Diode Conduction)
I
−2.1
2.5
−1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.6
0.9
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
39
70
18
50
85
22
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
www.vishay.com
1
Si4835BDY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "25 V
"100
nA
GSS
DS
GS
V
= −30 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −10 V
−50
A
D(on)
GS
V
= −10 V, I = −9.6 A
0.014
0.023
0.018
0.030
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −7.5 A
GS
D
a
Forward Transconductance
g
30
S
V
V
= −15 V, I = −9.6 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −2.1 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Q
37
25
g
V
= −15 V, V = −5 V, I = −9.6 A
nC
DS
GS
D
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
6.5
12.5
2.9
15
gs
gd
R
1.0
4.9
25
W
g
t
d(on)
t
13
20
r
V
DD
= −15 V, R = 15 W
L
I
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
60
100
70
D
GEN g
ns
d(off)
t
45
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= −2.1 A, di/dt = 100 A/ms
45
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
50
40
30
20
10
0
T
= −55_C
25_C
C
V
GS
= 10 thru 5 V
4 V
125_C
3 V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
www.vishay.com
2
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.05
3200
2400
1600
800
0
0.04
0.03
C
iss
V
GS
= 4.5 V
0.02
0.01
0.00
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 9.6 A
I = 9.6 A
D
6
4
2
0
0
10
20
30
40
50
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
60
10
I
D
= 9.6 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
www.vishay.com
3
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
80
60
0.4
I
D
= 250 mA
0.2
0.0
40
20
−0.2
−0.4
0
10
−2
−1
−50 −25
0
25
50
75
100 125 150
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
*r
DS(on)
Limited
10
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
I
D(on)
1
Limited
P(t) = 0.1
P(t) = 1
T
A
= 25_C
0.1
P(t) = 10
dc
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
− Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
DS(on)
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
www.vishay.com
4
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72029.
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4835CDY-T1-E3
TRANSISTOR 7.4 A, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8, FET General Purpose Power
VISHAY
SI4835DYD84Z
Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
SI4835DYF011
Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
SI4835DYL86Z
Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明