SI4854DY [VISHAY]
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode; 双N通道30 -V （ DS ） MOSFET与肖特基二极管
| 型号： | SI4854DY |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4854DY
Vishay Siliconix
New Product
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D LITTLE FOOT Plust—Dual TrenchFETr
Power MOSFET Plus Integrated Schottky
Diode
D PWM Optimized for Faster Swtiching
APPLICATIONS
0.026 @ V = 10 V
GS
6.9
6.4
5.5
0.030 @ V = 4.5 V
GS
30
0.041 @ V = 2.5 V
GS
SCHOTTKY PRODUCT SUMMARY
D DC/DC Conversion for 3- to 6-A Output
VSD (V)
Diode Forward Voltage
Current
VDS (V)
IF (A)
– Notebook
– Desktop
30
0.50 V @ 1.0 A
2.0
D
1
D
1
D
2
D
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
Schottky Diode
G
1
G
2
G
Top View
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"12
T
= 25_C
= 70_C
6.9
5.5
5.1
4.1
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
30
DM
a
Continuous Source Current (Diode Conduction)
I
1.7
2.0
1.3
0.9
1.1
0.7
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
52
93
35
62.5
110
40
53
93
35
62.5
110
40
a
Maximum Junction-to-Ambient
R
thJA
thJC
Steady-State
Steady-State
_C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
www.vishay.com
1
Si4854DY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "12 V
"100
1
nA
GSS
GS
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 24 V, V = 0 V
GS
100
15
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 85_C
GS
J
2000
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
20
A
D(on)
GS
V
V
= 10 V, I = 6.9 A
D
0.021
0.024
0.034
22
0.026
0.030
0.041
GS
b
= 4.5 V, I = 6.4 A
D
Drain-Source On-State Resistance
r
W
GS
GS
DS(on)
V
= 2.5 V, I = 5.5 A
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 6.9 A
S
V
DS
D
0.7
1.2
0.5
Ch-1
Ch-2
b
Diode Forward Voltage
V
SD
I = 1 A, V = 0 V
S GS
0.47
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
9
14
g
Q
Q
2.1
2.6
20
20
35
10
40
32
V
= 15 V, V = 4.5 V, I = 6.9 A
nC
ns
gs
gd
DS
GS
D
t
30
30
55
20
80
70
d(on)
t
r
V
DD
= 15 V, R = 15 W
L
I
D
^ 1 A, V
= 4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
GEN G
d(off)
t
f
Ch-1
Ch-2
Source-Drain Reverse Recovery Time
t
rr
I = 1.7 A, di/dt = 100 A/ms
F
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 1.0 A
0.47
0.36
0.004
0.7
0.50
0.42
0.100
10
F
Forward Voltage Drop
V
V
F
I
= 1.0 A, T = 125_C
F
J
V = 30 V
r
V = 30 V, T = 100_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = –30 V, T = 125_C
3.0
20
r
J
V = 10 V
r
C
50
T
Document Number: 71444
www.vishay.com
S-03476—Rev. A, 16-Apr-01
2
Si4854DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 3 V
24
18
12
6
T
= 125_C
C
2 V
25_C
–55_C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1500
1200
900
600
300
0
0.075
0.060
0.045
0.030
0.015
0.000
C
iss
V
GS
= 2.5 V
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
6
12
18
24
30
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 6.9 A
V
= 10 V
DS
GS
I
D
I = 6.9 A
D
6
4
2
0
0
4
8
12
16
20
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 71444
www.vishay.com
S-03476—Rev. A, 16-Apr-01
3
Si4854DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
I
= 6.9 A
D
T
= 150_C
J
10
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.2
50
40
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
30
20
10
0
–3
–2
–1
–50 –25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 93_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71444
www.vishay.com
S-03476—Rev. A, 16-Apr-01
4
Si4854DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
10
T
= 150_C
J
1
30 V
0.1
T
= 25_C
J
24 V
0.01
0.001
0.0001
1
0.0
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
T
– Temperature (_C)
V – Forward Voltage Drop (V)
F
J
Capacitance
200
160
120
80
40
0
C
oss
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
www.vishay.com
5
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