SI4888DY [VISHAY]
N-Channel Reduced Qg, Fast Switching MOSFET; N沟道减少的Qg ，快速开关MOSFET
| 型号： | SI4888DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4888DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.007 @ V = 10 V
16
13
GS
30
0.010 @ V = 4.5 V
GS
D
D
D D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
N-Channel MOSFET
Top View
S
S
S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
16
13
11
8
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
"50
DM
a
Continuous Source Current (Diode Conduction)
I
3.0
3.5
2.2
1.40
16
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
29
65
15
35
80
18
a
Maximum Junction-to-Ambient (MOSFET)
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71336
S-03662—Rev. D, 14-Apr-03
www.vishay.com
1
Si4888DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.80
1.6
"100
1
V
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 70_C
5
GS
J
a
On-State Drain Current
I
40
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.0058
0.007
0.010
V
= 10 V, I = 16 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 13 A
0.008
38
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 16 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 3 A, V = 0 V
0.74
1.1
24
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
16.3
4
Q
gs
Q
gd
V
= 15 V, V = 5.0 V, I = 16 A
nC
DS
GS
D
5.9
1.5
14
10
44
20
40
R
G
0.5
2.6
20
15
70
30
70
W
t
t
d(on)
t
r
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 3 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
= 10 thru 3 V
GS
40
30
20
10
0
T
C
= 125_C
25_C
2 V
1 V
-55_C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71336
S-03662—Rev. D, 14-Apr-03
www.vishay.com
2
Si4888DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
2500
2000
1500
1000
500
0.016
0.012
C
iss
V
GS
= 4.5 V
0.008
0.004
0.000
V
GS
= 10 V
C
oss
C
rss
0
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 16 A
V
GS
= 10 V
DS
I
D
I = 16 A
D
6
4
2
0
0
7
14
21
28
35
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (_C)
Q
g
- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
50
T
J
= 150_C
10
T
J
= 25_C
I
D
= 16 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71336
S-03662—Rev. D, 14-Apr-03
www.vishay.com
3
Si4888DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
Threshold Voltage
0.4
100
80
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
60
40
20
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (sec)
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71336
S-03662—Rev. D, 14-Apr-03
www.vishay.com
4
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