SI4908DY [VISHAY]
Dual N-Channel 40-V (D-S) MOSFET; 双N通道40 -V （D -S ）的MOSFET
| 型号： | SI4908DY |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 40-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4908DY
Vishay Siliconix
New Product
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)a
Qg (Typ)
D 100 % Rg Tested
APPLICATIONS
RoHS
0.060 at V = 10 V
5.0
4.7
GS
40
5.6
COMPLIANT
0.070 at V = 4.5 V
GS
D CCFL Inverter
D
1
D
2
SO-8
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
G
S
D
1
D
2
G
G
2
1
G
D
2
Top View
Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free)
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
40
"16
5
DS
V
V
GS
T
T
= 25 _C
= 70 _C
= 25 _C
= 70 _C
C
C
4.7
b, c
4.1
b, c
3.3
Continuous Drain Current (T = 150 _C)
I
D
J
T
A
T
A
Pulsed Drain Current (10 ms Pulse Width)
I
20
A
DM
T
= 25 _C
= 25 _C
2.3
b, c
1.5
C
Source-Drain Current Diode Current
I
S
T
A
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
20
7
SM
I
AS
L = 0.1 mH
E
AS
2.5
2.75
1.75
mJ
T = 25 _C
C
T = 70 _C
C
Maximum Power Dissipation
P
D
W
b, c
T
= 25 _C
= 70 _C
1.85
A
b, c
T
1.18
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
b, d
Maximum Junction-to-Ambient
t v 10 sec
Steady-State
R
57
35
67.5
45
thJA
thJF
C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Based on T = 25 _C.
C
b. Surface Mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 120 _C/W.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
1
Si4908DY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
GS
= 0 V, I = 250 mA
Drain-Source Breakdown Voltage
V
DS
40
D
V
V
Temperature Coefficient
Temperature Coefficient
DV /T
40
I
I
= 250 mA
= 250 mA
DS
DS
J
D
V
DV
GS(th)
/T
–4.6
GS(th)
J
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.8
20
2.2
100
1
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "16 V
nA
GSS
GS
V
= 40 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 40 V, V = 0 V, T = 55 _C
10
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
A
D(on)
DS
GS
V
= 10 V, I = 4.1 A
0.048
0.056
15
0.060
0.070
GS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 3.8 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 4.1 A
DS D
S
Dynamica
Input Capacitance
C
355
50
iss
N-Channel
Output Capacitance
C
oss
pF
V
DS
= 20 V, V = 0 V, f = 1 MHz
GS
Reverse Transfer Capacitance
C
rss
29
V
= 20 V, V = 10 V, I = 5 A
8
12
6
DS
DS
GS
D
Total Gate Charge
Q
g
3.7
1.1
1.4
3.4
8
nC
N-Channel
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
gs
gd
V
= 20 V, V = 4.5 V, I = 5 A
GS
D
R
g
f = 1 MHz
5.2
13
W
t
d(on)
N-Channel
t
r
20
23
27
74
95
31
33
30
V
DD
= 20 V, R = 4 W
L
Turn-Off Delay Time
Fall Time
t
35
d(off)
I
^ 1 A, V = 10 V, R = 1 W
GEN g
D
t
f
42
ns
Turn-On Delay Time
Rise Time
t
110
145
48
d(on)
N-Channel
= 20 V, R = 4 W
t
r
V
DD
L
Turn-Off Delay Time
Fall Time
t
d(off)
I
D
^ 1 A, V = 4.5 V, R = 1 W
GEN g
t
f
50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
2.3
20
T
I
= 25 _C
S
C
A
a
Pulse Diode Forward Current
I
SM
Body Diode Voltage
V
SD
0.8
26
26
13
13
1.2
40
40
V
= 1.5 A
S
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
rr
ns
nC
Q
rr
N-Channel
= 2 A, di/dt = 100 A/ms, T = 25 _C
I
F
J
t
t
a
ns
b
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
2
Si4908DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10 thru 4 V
16
12
8
3 V
T
= 125 _C
25 _C
C
4
–55 _C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
550
500
450
400
350
300
250
200
150
100
50
0.08
0.07
0.06
0.05
0.04
0.03
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
rss
C
oss
0
0
4
8
12
16
20
0
8
16
24
32
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.1
1.8
1.5
1.2
0.9
0.6
I
D
= 5 A
I = 5 A
D
V
= 10 V
DS
V
GS
= 4.5 V
V
DS
= 20 V
6
V
GS
= 10 V
V
DS
= 30 V
4
2
0
0.0
2.5
5.0
7.5
10.0
12.5
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
3
Si4908DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
0.15
0.10
0.05
0.00
20
10
I
= 5 A
D
T
= 150 _C
J
1
0.1
T
= 25 _C
J
T
A
= 125 _C
T
A
= 25 _C
0.01
2
3
4
5
6
7
8
9
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
0.2
50
40
–0.0
–0.2
–0.4
–0.6
–0.8
30
20
I
= 5 mA
D
I
D
= 250 mA
10
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
– Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Ambient
100
10
1
*Limited by r
DS(on)
1 ms
10 ms
100 ms
0.1
1 s
10 s
dc
T
A
= 25 _C
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
GS
GS
DS(on)
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
4
Si4908DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
6
5
4
3
2
1
0
0
25
50
75
100
125
150
T
– Case Temperature (_C)
C
Power De-Rating, Junction-to-Foot
Power De-Rating, Junction-to-Ambient
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case Temperature (_C)
T
– Case Temperature (_C)
C
C
*The power dissipation P is based on T
= 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
b
J(max)
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
5
Si4908DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 120 _C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73698.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
6
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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