SI4925BDY-T1-E3 [VISHAY]
Dual P-Channel 30-V (D-S) MOSFET; 双P通道30 - V（D -S）的MOSFET
| 型号： | SI4925BDY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D Advanced High Cell Density
VDS (V)
rDS(on) (W)
ID (A)
Process
Pb-free
Available
0.025 @ V = −10 V
APPLICATIONS
−7.1
−5.5
GS
−30
0.041 @ V = −4.5
V
D Load Switches
− Notebook PCs
− Desktop PCs
− Game Stations
GS
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
D
1
D
2
Top View
P-Channel MOSFET
P-Channel MOSFET
Ordering Information: Si4925BDY
Si4925BDY—T1 (with Tape and Reel)
Si4925BDY—E3 (Lead (Pb)-Free)
Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"20
T
= 25_C
= 70_C
−5.3
−4.3
−7.1
−5.7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−40
a
continuous Source Current (Diode Conduction)
I
−1.7
2.0
−0.9
1.1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
50
85
30
62.5
110
40
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
1
Si4925BDY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1
−3
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −30 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 55_C
−25
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −10 V
−40
A
D(on)
GS
V
= −10 V, I = −7.1 A
0.020
0.033
0.025
0.041
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −5.5 A
GS
D
a
Forward Transconductance
g
20
S
V
V
= −10 V, I = −7.1 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −1.7 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
33
5.4
8.9
9
50
g
Q
Q
V
= −15 V, V = −10 V, I = −7.1 A
nC
ns
gs
gd
DS
GS
D
t
15
20
90
50
d(on)
t
r
12
60
34
V
DD
= −15 V, R = 15 W
L
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
GEN G
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= −1.7 A, di/dt = 100 A/ms
30
60
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
30
20
10
0
40
30
20
10
0
T
= −55_C
25_C
C
V
= 10 thru 5 V
GS
4 V
125_C
3, 2 V
4
0
1
2
3
5
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
2
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2500
2000
1500
1000
500
0.08
0.06
C
iss
V
GS
= 4.5 V
0.04
0.02
0.00
V
GS
= 10 V
C
oss
C
rss
0
0
10
20
30
40
0
6
12
18
24
30
I
D
− Drain Current (A)
Gate Charge
V
DS
− Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 7.1 A
I = 7.1 A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
0.00
50
10
I
D
= 7.1 A
T
= 150_C
J
I
D
= 3 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
3
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
30
25
20
0.6
I
D
= 250 mA
0.4
0.2
15
10
0.0
−0.2
5
0
−0.4
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
*r
I
Limited
DS(on)
DM
Limited
P(t) = 0.0001
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
T
A
= 25_C
P(t) = 1
0.1
P(t) = 10
Single Pulse
dc
BV
DSS
Limited
10
0.01
0.1
1
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
DS(on)
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
4
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72001.
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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