SI4965DY-T1 [VISHAY]
Dual P-Channel 1.8-V (G-S) MOSFET; 双P沟道1.8 -V （G -S ）的MOSFET
| 型号： | SI4965DY-T1 |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 1.8-V (G-S) MOSFET |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4965DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.021 @ V = -4.5 V
GS
-8.0
-7.0
-5.8
0.027 @ V = -2.5 V
GS
-8
0.040 @ V = -1.8 V
GS
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View
D
1
D
1
D
2
D
2
Ordering Information: Si4965DY
Si4965DY-T1 (with Tape and Reel)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
-8
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
"8
T
= 25_C
= 70_C
-8.0
-6.4
A
a, b
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
-30
DM
a, b
Continuous Source Current (Diode Conduction)
I
S
-1.7
T
= 25_C
= 70_C
2.0
A
a, b
Maximum Power Dissipation
P
W
D
T
A
1.3
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
62.5
a
Maximum Junction-to-Ambient
R
thJA
C/W
Steady State
93
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70826
S-31989—Rev. B, 13-Oct-03
www.vishay.com
1
Si4965DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.45
V
GS(th)
DS
GS
D
V
= 0 V, V = "8 V
GS
I
"100
nA
DS
GSS
V
= -8 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= -8 V, V = 0 V, T = 70_C
DS
DS
GS
J
a
On-State Drain Current
I
V
w -5 V, V = -4.5 V
-20
A
D(on)
GS
V
= -4.5 V, I = -8.0 A
0.0175
0.022
0.021
0.027
GS
GS
GS
D
a
V
= -2.5 V, I = -7.0 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.031
27
0.040
V
= -1.8 V, I = -5.8 A
D
a
Forward Transconductance
g
V
= -5 V, I = -8.0 A
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I = -1.7 A, V = 0 V
S GS
-1.2
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
36
7.5
5.0
35
55
g
Q
Q
V
= -4 V, V = -4.5 V, I = -8.0 A
nC
ns
gs
gd
DS
GS
D
t
70
90
d(on)
t
r
45
V
= -4 V, R = 4 W
L
GEN G
DD
I
^ -1 A, V
= -4.5 V, R = 6 W
D
Turn-Off Delay Time
Fall Time
t
170
90
340
180
90
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
= -1.7 A, di/dt = 100 A/ms
60
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70826
S-31989—Rev. B, 13-Oct-03
www.vishay.com
2
Si4965DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
T
= -55_C
C
V
GS
= 5 thru 2.5 V
2 V
24
18
12
6
25_C
125_C
1.5 V
1 V
2.5
0
0.0
0
0.0
0.5
1.0
1.5
2.0
3.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7000
6000
5000
4000
3000
2000
1000
0
0.08
0.06
0.04
0.02
0.00
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
6
12
18
24
30
0
2
4
6
8
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.5
1.2
0.9
0.6
V
D
= 4 V
V
GS
= 4.5 V
DS
I
= 8.0 A
I = 8.0 A
D
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
J
Document Number: 70826
S-31989—Rev. B, 13-Oct-03
www.vishay.com
3
Si4965DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
0.00
30
T
= 150_C
J
10
I
D
= 8.0 A
T
= 25_C
J
1
0.00
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.3
30
25
I
D
= 250 mA
20
15
0.2
0.1
0.0
10
5
-0.1
-0.2
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 93_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70826
S-31989—Rev. B, 13-Oct-03
www.vishay.com
4
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