SI5404DC-T1-E3 [VISHAY]
N-Channel 2.5-V (G-S) MOSFET;
| 型号： | SI5404DC-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 2.5-V (G-S) MOSFET |
| 文件： | 总5页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5404DC
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.030 @ V = 4.5 V
7.2
5.9
GS
20
0.045 @ V = 2.5 V
GS
D
1206-8 ChipFETr
1
D
D
D
D
D
G
D
G
Marking Code
AB XX
S
Lot Traceability
and Date Code
S
N-Channel MOSFET
Part # Code
Bottom View
Ordering Information: Si5404DC-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
V
V
GS
"12
T
= 25_C
= 85_C
7.2
5.2
5.2
3.8
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
20
DM
a
Continuous Source Current (Diode Conduction)
I
2.1
2.5
1.3
1.1
1.3
0.7
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
260
J
stg
_C
b, c
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
40
80
15
50
95
20
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71057
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
Si5404DC
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "12 V
GS
I
"100
nA
GSS
V
= 20 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 20 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
20
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
0.025
0.030
0.045
V
= 4.5 V, I = 5.2 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 4.3 A
0.038
20
GS
D
a
Forward Transconductance
g
fs
V
= 10 V, I = 5.2 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 1.1 A, V = 0 V
0.8
1.2
18
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
12
2.4
3.2
20
40
40
15
30
g
Q
Q
V
= 10 V, V = 4.5 V, I = 5.2 A
nC
ns
gs
gd
DS
GS
D
t
30
60
60
23
60
d(on)
t
r
V
= 10 V, R = 10 W
L
DD
I
^ 1 A, V
= 4.5 V, R = 6 W
D
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
t
rr
I = 1.1 A, di/dt = 100 A/ms
F
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 5 thru 3 V
2.5 V
16
12
8
2 V
T
= 125_C
C
4
4
25_C
-55_C
1.5 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71057
S-31989—Rev. C, 13-Oct-03
www.vishay.com
2
Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.06
1800
1500
1200
900
600
300
0
C
iss
0.05
V
GS
= 2.5 V
0.04
0.03
0.02
0.01
0.00
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
DS
GS
I
= 5.2 A
I = 5.2 A
D
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.06
0.05
0.04
0.03
0.02
0.01
0.00
20
10
T
= 150_C
J
I
D
= 5.2 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71057
S-31989—Rev. C, 13-Oct-03
www.vishay.com
3
Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
30
0.2
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
20
10
0
-3
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71057
S-31989—Rev. C, 13-Oct-03
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI5406DC-T1-E3
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
VISHAY
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