SI5435DC [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI5435DC |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5435DC
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
(V)
r
(Ω)
I (A)
D
DS
DS(on)
0.050 @ V = --10 V
-- 5 . 6
-- 4 . 0
GS
-- 30
0.080 @ V = --4.5
GS
V
S
1206-8 ChipFETt
1
D
G
D
D
D
D
Marking Code
BE XX
D
G
S
Lot Traceability
and Date Code
Part # Code
D
P-Channel MOSFET
Bottom View
Ordering Information: Si5435DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-- 3 0
DS
V
V
GS
20
T
= 25_C
= 85_C
-- 4 . 1
-- 2 . 9
-- 5 . 6
-- 4 . 0
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-- 3 0
DM
a
Continuous Source Current
I
-- 2 . 1
2.5
-- 1 . 1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
--55 to 150
260
J
stg
_C
b, c
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 5 sec
Steady State
Steady State
40
80
15
50
95
20
a
Maximum Junction-to-Ambient
R
R
thJA
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71144
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Si5435DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = --250 mA
-- 1
V
GS(th)
DS
GS D
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
V
= --24 V, V = 0 V
-- 1
-- 5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= --24 V, V = 0 V, T = 85_C
GS J
a
On-State Drain Current
I
V
DS
-- 5 V, V = --10 V
-- 3 0
A
D(on)
GS
V
= --10 V, I = --4.1 A
0.042
0.070
0.050
0.080
GS
D
a
Drain-Source On-State Resistance
r
Ω
DS(on)
V
= --4.5 V, I = --3.1 A
D
GS
a
Forward Transconductance
g
8
S
V
V
= --15 V, I = --4.1 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
= --1.1 A, V = 0 V
-- 0 . 8
-- 1 . 2
24
S
GS
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
16
3.6
3.1
11
5
g
Q
Q
V
= --15 V, V = --10 V, I = --4.1 A
nC
ns
gs
gd
DS
GS
D
t
20
10
80
40
60
d(on)
t
r
V
= --15 V, R = 15 Ω
L
GEN G
DD
I
D
≅ -- 1 A , V
= --10 V, R = 6 Ω
Turn-Off Delay Time
Fall Time
t
40
20
30
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = --1.1 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 6 V
5 V
T
= --55_C
C
24
18
12
6
25_C
125_C
4 V
3 V
0
0
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
V
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71144
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-2
Si5435DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.16
1200
900
600
300
0
C
iss
0.12
V
GS
= 10 V
0.08
0.04
0.00
V
GS
= 4.5 V
C
oss
C
rss
0
6
12
18
24
30
0
6
12
18
24
30
I
D
-- Drain Current (A)
V
DS
-- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
GS
= 10 V
DS
I
= 4.1 A
I = 4.1 A
D
6
4
2
0
0
4
8
12
16
--50 --25
0
25
50
75
100 125 150
Q
-- Total Gate Charge (nC)
T
-- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.16
0.12
0.08
0.04
0.00
30
10
T
= 150_C
J
I
D
= 4.1 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71144
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-3
Si5435DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
40
30
0.6
I
D
= 250 mA
0.4
0.2
20
10
0
0.0
-- 0 . 2
-- 0 . 4
-- 3
-- 2
-- 1
--50 --25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
-- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80_C/W
thJA
(t)
3. T -- T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71144
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-4
相关型号：
SI5435DC-E3
TRANSISTOR 4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET-8, FET General Purpose Small Signal
VISHAY
SI5441BDC-T1-GE3
TRANSISTOR 4400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
VISHAY
SI5441DC-E3
TRANSISTOR 3900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明