SI5447DC [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI5447DC |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5447DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
0.076 @ V = --4.5 V
-- 4 . 8
-- 4 . 0
-- 3 . 3
GS
-- 2 0
0.110 @ V = --2.5 V
GS
0.160 @ V = --1.8 V
GS
S
1206-8 ChipFETt
1
D
G
D
D
D
D
Marking Code
BG XX
D
G
S
Lot Traceabili-
ty
and Date Code
Part #
Code
D
P-Channel MOSFET
Bottom View
Ordering Information: Si5447DC-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Steady
State
Parameter
Symbol
5 secs
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-- 2 0
DS
V
V
8
GS
T
= 25_C
= 85_C
-- 3 . 5
-- 2 . 5
-- 4 . 8
-- 3 . 5
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
-- 1 5
DM
a
Continuous Source Current
I
-- 2 . 1
2.5
-- 1 . 1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
--55 to 150
260
J
stg
_C
b, c
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 5 sec
Steady State
Steady State
43
83
14
50
95
20
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71256
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Si5447DC
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = --250 mA
--0.45
V
GS(th)
DS
GS D
I
V
= 0 V, V = 8 V
100
nA
GSS
DS
GS
V
= --16 V, V = 0 V
-- 1
-- 5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= --16 V, V = 0 V, T = 85_C
GS J
DS
a
On-State Drain Current
I
V
-- 5 V, V = --4.5 V
-- 1 5
A
D(on)
DS
GS
V
= --4.5 V, I = --3.5 A
D
0.064
0.091
0.130
0.076
0.110
0.160
GS
a
V
= --2.5 V, I = --2.9 A
D
Drain-Source On-State Resistance
r
Ω
GS
DS(on)
V
= --1.8 V, I = --1 A
D
GS
a
Forward Transconductance
g
9
S
V
V
= --10 V, I = --3.5 A
D
fs
DS
a
Diode Forward Voltage
V
I
= --1.1 A, V = 0 V
-- 0 . 8
-- 1 . 2
10
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
6.5
1.4
1.3
14
29
42
35
30
g
Q
gs
Q
gd
V
= --10 V, V = --4.5 V, I = --3.5 A
nC
ns
DS
GS
D
t
21
45
65
55
60
d(on)
t
r
V
= --10 V, R = 10 Ω
L
= --4.5 V, R = 6 Ω
GEN G
DD
I
D
≅ -- 1 A , V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = --1.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
12
9
V
= 5 thru 3 V
T
C
= --55_C
GS
2.5 V
25_C
12
9
125_
C
2 V
6
6
3
3
1.5 V
1 V
0
0
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
-- Drain-to-Source Voltage (V)
V
-- Gate-to-Source Voltage (V)
GS
Document Number: 71256
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-2
Si5447DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.30
1200
1000
800
600
400
200
0
V
= 1.8 V
GS
0.25
0.20
0.15
0.10
0.05
0.00
C
iss
V
= 2.5 V
GS
V
= 4.5 V
GS
12
C
oss
C
rss
0
3
6
9
15
0
4
8
12
16
20
I
D
-- Drain Current (A)
V
DS
-- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
GS
DS
I
= 3.5 A
I = 3.5 A
D
0
2
4
6
8
--50 --25
0
25
50
75
100 125 150
Q
g
-- Total Gate Charge (nC)
T
J
-- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
T
J
= 150_C
I
D
= 3.5 A
T
J
= 25_C
1
0.0
0.2
0.4
SD
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
V
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71256
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-3
Si5447DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
30
0.3
I
D
= 250 mA
0.2
0.1
20
10
0
0.0
-- 0 . 1
-- 0 . 2
-- 2
-- 1
--50 --25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
-- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
2
= 80_C/W
thJA
(t)
3. T -- T = P
JM
4. Surface Mounted
Z
A
DM thJA
Single Pulse
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-- 4
-- 3
-- 2
-- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71256
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-4
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