SI5476DU_08 [VISHAY]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | SI5476DU_08 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si5476DU
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
12
TrenchFET® Power MOSFET
0.034 at VGS = 10 V
0.041 at VGS = 4.5 V
New Thermally Enhanced PowerPAK®
RoHS
60
10.5 nC
ChipFET® Package
12
COMPLIANT
- Small Footprint Area
- Low On-Resistance
PowerPAK ChipFET Single
- Thin 0.8 mm Profile
1
2
Marking Code
AA XXX
APPLICATIONS
D
D
3
•
•
Load Switch for Portable Applications
DC-DC Switch for Low Power Synchronous
Rectification
D
D
Lot Traceability
and Date Code
4
D
D
8
G
D
Part # Code
7
•
Intermediate Switch Driver
for DC/DC Applications
S
6
S
G
5
Bottom View
Ordering Information: Si5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
12a
12a
7b, c
5.6b, c
25
12a
2.6b, c
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
15
Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
EAS
mJ
W
11.2
31
T
C = 25 °C
TC = 70 °C
A = 25 °C
20
PD
Maximum Power Dissipation
3.1b, c
2b, c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 5 s
34
3
40
4
°C/W
RthJC
Steady State
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73663
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
New Product
Si5476DU
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 1 mA
ID = 250 µA
Drain-Source Breakdown Voltage
60
V
V
DS Temperature Coefficient
55
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 6.3
VDS = VGS, ID = 250 µA
1
3
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
25
VGS = 10 V, ID = 4.6 A
0.028
0.033
20
0.034
0.041
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = 4.5 V, ID = 4.2 A
VDS = 15 V, ID = 4.6 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1100
90
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 4.6 A
pF
55
21
32
16
Qg
Total Gate Charge
10.5
3.5
4.2
3.3
20
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = 30 V, VGS = 4.5 V, ID = 4.6 A
f = 1 MHz
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
30
225
30
90
15
25
40
15
150
20
V
DD = 30 V, RL = 5.4 Ω
ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
60
ns
Turn-On Delay Time
Rise Time
10
15
V
DD = 30 V, RL = 5.4 Ω
ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
22
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
12
25
1.2
50
50
A
IS = 5.5 A, VGS = 0 V
Body Diode Voltage
0.85
25
25
19
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73663
S-81448-Rev. B, 23-Jun-08
New Product
Si5476DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
4
3
2
1
0
25
V
GS
= 10 thru 4 V
T
= - 55 °C
C
20
15
10
5
T
= 125 °C
C
V
GS
= 3 V
T
= 25 °C
C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
1200
900
600
300
0
0.040
C
iss
0.036
0.032
V
GS
= 4.5 V
V
= 10 V
GS
0.028
C
oss
C
rss
0.024
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
D
= 4.6 A
V
= 10 V
= 4.6 A
GS
I
D
8
6
V
= 30 V
DS
V
DS
= 48 V
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
T - Junction Temperature (°C)
J
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 73663
S-81448-Rev. B, 23-Jun-08
www.vishay.com
3
New Product
Si5476DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.08
I
= 4.6 A
D
0.07
0.06
0.05
0.04
0.03
0.02
T
J
= 150 C
10
T
= 125 C
A
T
J
= 25
1.0
C
T
A
= 25
6
C
1
0.0
0.2
0.4
0.6
0.8
1.2
0
2
4
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
50
40
I
D
= 250 µA
30
20
10
0
- 50 - 25
0
25
50
75
100 125 150
0.001 0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
BVDSS Limited
100 µs
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
0.1
T
= 25 C
A
1 s
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73663
S-81448-Rev. B, 23-Jun-08
New Product
Si5476DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
24
35
30
25
20
15
10
5
20
16
Package Limited
12
8
4
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73663
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
New Product
Si5476DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
0.02
2
2. Per Unit Base = R
= 75 C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73663.
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Document Number: 73663
S-81448-Rev. B, 23-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号：
SI5482DU-T1-GE3
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