SI5920DC [VISHAY]
Dual N-Channel 1.5-V (G-S) MOSFET; 双N沟道1.5 -V （G -S ）的MOSFET
| 型号： | SI5920DC |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 1.5-V (G-S) MOSFET |
| 文件： | 总7页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si5920DC
Vishay Siliconix
Dual N-Channel 1.5-V (G-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET: 1.5 V Rated
VDS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
•
Ultra -low on-resistance in compact,
4a
4a
4a
4a
0.032 at VGS = 4.5 V
0.036 at VGS = 2.5 V
0.045 at VGS = 1.8 V
0.054 at VGS = 1.5 V
thermally enhanced ChipFET® package
RoHS
COMPLIANT
8
7.3 nC
APPLICATIONS
Load switch for portable applications
•
- Guaranteed operation at VGS = 1.5 V critical for opti
mized design and space savings
1206-8 ChipFET® (Dual)
1
D
1
D
2
S
1
D
G
1
1
D
S
1
2
Marking Code
D
G
2
2
G
1
G
2
CD XXX
D
Lot Traceability
and Date Code
2
Part #
Code
S
1
S
2
Bottom View
Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
VGS
8
Drain-Source Voltage
Gate-Source Voltage
V
5
4a
4a
4a
T
C = 25 °C
C = 70 °C
T
ID
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
4a
A
IDM
IS
Pulsed Drain Current
25
TC = 25 °C
TA = 25 °C
2.6
Continuous Source-Drain Diode Current
1.7c
3.12
2.0
2.04b, c
1.3b, c
T
C = 25 °C
C = 70 °C
T
PD
W
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
50
30
Maximum
Unit
Maximum Junction-to-Ambientb, f
t ≤ 5 sec
Steady State
60
40
°C/W
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73490
S-70914-Rev. C, 07-May-07
www.vishay.com
1
New Product
Si5920DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
8
V
V
DS Temperature Coefficient
8.2
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.6
VDS = VGS, ID = 250 µA
0.3
25
1
V
IGSS
VDS = 0 V, VGS
=
5 V
100
1
ns
VDS = 8 V, VGS = 0 V
DS = 8 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
VGS = 4.5 V, ID = 6.8 A
0.025
0.0285
0.036
0.041
18
0.032
0.036
0.045
0.054
V
V
V
GS = 2.5 V, ID = 6.3 A
GS = 1.8 V, ID = 2.5 A
GS = 1.5 V, ID = 1.8 A
Drain-Source On-State Resistancea
rDS(on)
Ω
Forward Transconductancea
gfs
VDS = 4 V, ID = 6.8 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
680
230
140
8
VDS = 4 V, VGS = 0 V, f = 1 MHz
VDS = 4 V, VGS = 5 V, ID = 6.8 A
pF
12
11
Qg
Total Gate Charge
7.3
0.84
1.26
1.8
8
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = 4 V, VGS = 4.5 V, ID = 6.8 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
2.7
12
17
27
11
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
V
DD = 4 V, RL = 0.73 Ω
ns
ID ≅ 5.5 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
18
Fall Time
7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
2.6
25
1.2
18
5
A
IS = 2.6 A, VGS = 0 V
0.8
12
3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C
7
ns
tb
5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73490
S-70914-Rev. C, 07-May-07
New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
6
4
2
0
25
20
15
10
5
V
GS
= 5 thru 2 V
V
= 1.8 V
= 1.5 V
GS
GS
T
C
= - 55 °C
C
T
= 25 °C
V
T
= 125 °C
C
V
GS
= 1 V
0
0.0
0.3
V
0.6
0.9
1.2
1.5
0.0
1.0
2.0
3.0
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.06
0.05
0.04
0.03
0.02
1000
900
800
700
600
500
400
300
200
100
0
V
= 1.5 V
GS
C
iss
V
= 1.8 V
GS
C
oss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
rss
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
I - Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
r
DS(on) vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
I
D
= 6.8 A
V
GS
V
GS
= 4.5 V, I = 5 A
D
= 1.5 V, I = 1.8 A
V
DS
= 4 V
D
V
DS
= 6.4 V
V
GS
V
GS
= 2.5 V, I = 4.8 A
D
= 1.8 V, I = 2.5 A
D
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73490
S-70914-Rev. C, 07-May-07
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New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10.0
0.06
0.05
0.04
0.03
0.02
T
A
= 125 °C
T
A
= 150 °C
T
A
= 25 °C
1.0
T
A
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temp
rDS(on) vs. VGS vs. Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
50
40
30
I
D
= 250 µA
20
10
0
-4
-3
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
10
10
Time (sec)
Single Pulse Power
1
10
100 600
T
J
- Temperature (°C)
Threshold Voltage
100
10
1
*Limited by r
DS(on)
10 ms
100 ms
1 s
10 s
dc
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
*V > minimum V
GS
at which r
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Case
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Document Number: 73490
S-70914-Rev. C, 07-May-07
New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
4
3
2
1
0
8
6
Package Limited
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73490
S-70914-Rev. C, 07-May-07
www.vishay.com
5
New Product
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73490.
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Document Number: 73490
S-70914-Rev. C, 07-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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