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SI5975DC-E3 [VISHAY]

Small Signal Field-Effect Transistor, 3.1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8;

SI5975DC-E3


元器件型号：	SI5975DC-E3
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Small Signal Field-Effect Transistor, 3.1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8 光电二极管晶体管
PDF文件：	总4页 (文件大小：42K)
下载文档：	下载PDF数据表文档文件
型号参数：SI5975DC-E3参数

SI5975DC-T1

Dual P-Channel 12-V (D-S) MOSFET

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4 VISHAY

SI5975DC-T1

Dual P-Channel 12-V (D-S) MOSFET

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5 VISHAY

SI5975DC-T1

Dual P-Channel 12-V (D-S) MOSFET

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10 VISHAY

SI5975DC-T1

Transistor,

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0 VISHAY

SI5975DC-T1-E3

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

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0 VISHAY

SI5980DU-T1-GE3

DUAL N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel

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0 VISHAY

SI5997DU-T1-GE3

DUAL P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

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0 VISHAY

SI-5L1.441G

Isolator, 1429MHz Min, 1453MHz Max,

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0 HITACHI

SI-5L1.441G-T

Isolator, 1429MHz Min, 1453MHz Max,

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0 HITACHI

SI-5L1.747G

Isolator, 1710MHz Min, 1785MHz Max,

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0 HITACHI

SI-5L1.747G-T

Isolator, 1710MHz Min, 1785MHz Max,

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0 HITACHI

SI-5L1.880G

Isolator, 1850MHz Min, 1910MHz Max,

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0 HITACHI

SI-5L2.140G-T

Isolator, 2110MHz Min, 2170MHz Max,

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0 HITACHI

SI-5R1.441G-T

Isolator, 1429MHz Min, 1453MHz Max,

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0 HITACHI

SI-5R1.747G

Isolator, 1710MHz Min, 1785MHz Max,

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0 HITACHI

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