SI6463BDQ [VISHAY]
P-Channel 1.8-V (G-S) MOSFET; P沟道1.8 -V （G -S ）的MOSFET
| 型号： | SI6463BDQ |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 1.8-V (G-S) MOSFET |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6463BDQ
Vishay Siliconix
New Product
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.015 @ V
= -4.5 V
= -2.5 V
= -1.8 V
-7.4
- 6.3
- 5.5
GS
GS
GS
0.020 @ V
0.027 @ V
-20
S*
TSSOP-8
G
D
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7
must be tied common.
S
S
Si6463BDQ
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-20
DS
GS
V
V
"8
T
= 25_C
= 70_C
- 7.4
-5.9
-6.2
4.9
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
-30
DM
a
Continuous Source Current (Diode Conduction)
I
-1.35
1.5
-0.95
1.05
0.67
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
65
100
46
83
120
56
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72018
S-21782—Rev. A, 07-Oct-02
www.vishay.com
1
Si6463BDQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.45
-0.8
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "8 V
GS
I
"100
nA
GSS
V
= -16 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -16 V, V = 0 V, T = 70_C
-10
GS
J
a
On-State Drain Current
I
V
DS
-5 V, V = -4.5 V
20
A
D(on)
GS
V
= -4.5 V, I = -7.4 A
0.011
0.015
0.015
0.020
GS
D
W
W
a
V
= -2.5 V, I = -6.3 A
D
Drain-Source On-State Resistance
r
GS
GS
DS(on)
0.020
0.027
V
= -1.8 V, I = -5.5 A
D
a
Forward Transconductance
g
V
= -15 V, I = -7.4 A
34
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= -1.3 A, V = 0 V
-0.64
-1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
40
5.2
8
60
g
Q
Q
V
= -10 V, V
= -5 V, I = -7.4 A
nC
ns
gs
gd
DS
GS
D
t
35
40
190
90
75
55
60
d(on)
t
r
V
DD
= -10 V, R = 15 W
L
I
D
^ -1 A, V
= -4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
300
150
120
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = -1.3 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 5 thru 2 V
24
18
12
6
1.5 V
T
= 125_C
C
25_C
-55 _C
0
0
0
1
2
3
4
5
0.0
0.5
GS
1.0
1.5
2.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
Document Number: 72018
www.vishay.com
S-21782—Rev. A, 07-Oct-02
2
Si6463BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
5000
4000
3000
2000
1000
0
0.024
V
= 1.8 V
GS
C
iss
V
V
= 2.5 V
= 4.5 V
0.018
0.012
0.006
0.000
GS
GS
C
oss
C
rss
0
6
12
18
24
30
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 7.4 A
V
= 4.5 V
DS
GS
I
D
I = 7.4 A
D
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.06
30
10
0.05
0.04
0.03
0.02
0.01
0.00
T
= 150_C
J
I
D
= 7.4 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72018
www.vishay.com
S-21782—Rev. A, 07-Oct-02
3
Si6463BDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
200
160
120
0.2
I
D
= 250 mA
0.0
-0.2
-0.4
80
40
0
- 3
- 2
- 1
-50
-25
0
25
50
75
100 125 150
10
10
10
1
10
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
Limited
by r
DS(on)
1 ms
10
10 ms
100 ms
1 s
1
0.1
T
= 25_C
10 s
dc
C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72018
www.vishay.com
S-21782—Rev. A, 07-Oct-02
4
Si6463BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72018
www.vishay.com
S-21782—Rev. A, 07-Oct-02
5
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