SI6475DQ [VISHAY]
P-Channel 12-V (D-S) MOSFET; P通道12 -V （D -S ）的MOSFET
| 型号： | SI6475DQ |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 12-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
Si6475DQ
Vishay Siliconix
New Product
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.011 @ V = –4.5 V
–10
–9
GS
0.0135 @ V = –2.5 V
GS
–12
0.017 @ V = –1.8 V
–8
GS
S*
TSSOP-8
G
D
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7
must be tied common.
S
S
Si6475DQ
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–12
DS
GS
V
V
"8
T
= 25_C
= 70_C
–10
–8
–7.8
–6.2
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
–30
DM
a
Continuous Source Current (Diode Conduction)
I
–1.5
1.75
1.14
–0.95
1.08
0.69
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
55
95
35
70
115
45
a
Maximum Junction-to-Ambient
R
thJA
thJF
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71294
S-01889—Rev. A, 28-Aug-00
www.vishay.com
1
Si6475DQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –5 mA
–0.45
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "8 V
GS
I
"100
nA
GSS
V
= –9.6 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –9.6 V, V = 0 V, T = 70_C
–10
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –4.5 V
20
A
D(on)
GS
V
= –4.5 V, I = –10 A
D
0.009
0.011
0.011
GS
W
W
a
0.0135
V
= –2.5 V, I = –9 A
D
Drain-Source On-State Resistance
r
GS
DS(on)
0.014
0.017
V
GS
= –1.8 V, I = –8 A
D
a
Forward Transconductance
g
V
I
= –15 V, I = –10 A
50
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
= –1.5 A, V = 0 V
–0.68
–1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
49.5
7.7
8.5
56
70
g
Q
gs
Q
gd
V
= –6 V, V = –4.5 V, I = –10 A
nC
ns
DS
GS
D
t
85
d(on)
t
r
62
100
450
270
150
V
DD
= –6 V, R = 6 W
L
I
D
^ –1 A, V
= –4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
300
185
90
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –1.5 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 5 thru 2 V
1.5 V
24
18
12
6
T
C
= 125_C
1 V
25_C
–55_C
0
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71294
S-01889—Rev. A, 28-Aug-00
www.vishay.com
2
Si6475DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.025
0.020
0.015
0.010
0.005
0
10000
C
iss
8000
6000
4000
2000
0
V
= 1.8 V
GS
V
V
= 2.5 V
= 4.5 V
GS
GS
C
oss
C
rss
0
0
0
6
12
18
24
30
0
3
6
9
12
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 6 V
= 10 A
V
D
= 4.5 V
I = 10 A
DS
GS
I
D
10
20
30
40
50
60
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0
30
10
T = 150_C
J
I
D
= 10 A
T = 25_C
J
1
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71294
S-01889—Rev. A, 28-Aug-00
www.vishay.com
3
Si6475DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.5
60
50
0.3
40
30
I
D
= 250 mA
0.1
20
10
0
–0.1
–0.3
–2
–1
–50 –25
0
25
50
75
100 125 150
10
10
1
10
100
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 95_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71294
S-01889—Rev. A, 28-Aug-00
www.vishay.com
4
相关型号：
SI6475DQ-E3
TRANSISTOR 7800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明