SI6544BDQ [VISHAY]
N-and P-Channel 30-V (D-S) MOSFET; N端和P沟道30 V（D -S）的MOSFET
| 型号： | SI6544BDQ |
| 厂家： | 
VISHAY |
| 描述： | N-and P-Channel 30-V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6544BDQ
Vishay Siliconix
New Product
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFETS
0.032 @ V = 10 V
4.3
3.7
GS
N-Channel
P-Channel
30
0.046 @ V = 4.5 V
GS
0.043 @ V = -10 V
-3.8
-2.8
GS
-30
0.073 @ V = -4.5 V
GS
D
1
S
2
TSSOP-8
G
D
1
D
1
2
3
4
8
7
6
5
2
2
2
2
D
S
1
S
1
1
S
S
G
1
G
G
2
Top View
Ordering Information: Si6544BDQ-T1
S
1
D
2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
N-Channel
10 sec Steady State
P-Channel
10 sec
Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
-30
DS
V
V
GS
"20
T
= 25_C
= 70_C
4.3
3.5
3.7
3.0
-3.8
-3.0
-3.8
-2.6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
20
-20
DM
a
Continuous Source Current (Diode Conduction)
I
1..0
1.14
0.73
0.7
-1..0
1.14
0.73
-0.7
0.83
0.53
S
T
= 25_C
= 70_C
0.83
0.53
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
88
120
65
110
150
80
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
Steady State
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
1
Si6544BDQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
= V , I = 250 mA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
3.0
-3.0
"100
"100
1
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
DS
= V , I = -250 mA
-1.0
GS
D
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
= 24 V, V = 0 V
GS
DS
V
DS
= -24 V, V = 0 V
-1
GS
Zero Gate Voltage Drain Current
I
mA
A
DSS
V
= 24 V, V = 0 V, T = 55_C
5
DS
GS
J
V
DS
= -24 V, V = 0 V, T = 55_C
-5
GS
J
V
w 5 V, V = 10 V
20
DS
GS
a
On-State Drain Current
I
D(on)
V
DS
w -5 V, V = -10 V
-20
GS
V
= 10 V, I = 4.3 A
0.025
0.034
0.037
0.058
11
0.032
0.043
0.046
0.073
GS
D
V
GS
= -10 V, I = -3.8 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 3.7 A
D
GS
V
GS
= -4.5 V, I = -2.8 A
D
V
= 15 V, I = 4.3 A
D
DS
a
Forward Transconductance
g
fs
S
V
V
DS
= -15 V, I = - 3.8 A
11
D
I
S
= 1.25 A, V = 0 V
0.77
-0.77
1.1
GS
a
Diode Forward Voltage
V
SD
I
S
= -1.25 A, V = 0 V
GS
-1.1
Dynamicb
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.5
16
15
25
Total Gate Charge
Q
g
N-Channel
V
= 15 V, V = 10 V, I = 4.3 A
1.8
2.3
1.55
4.5
0.45
8.8
13
DS
GS D
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
gs
gd
P-Channel
V
DS
= -15 V, V = -10 V, I = -3.8 A
GS D
R
g
W
25
25
25
25
50
65
20
50
60
t
d(on)
14
N-Channel
14
V
= 15 V, R = 15 W
DD
L
t
r
14
I
D
^ 1 A, V = 10 V, R = 6 W
GEN G
30
P-Channel
= -15 V, R = 15 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
40
I
D
^ -1 A, V
= -10 V, R = 6 W
GEN G
10
t
f
30
I
= 1.25 A, di/dt = 100 A/ms
= -1.25 A, di/dt = 100 A/ms
30
F
Source-Drain
Reverse Recovery Time
t
rr
I
30
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
2
Si6544BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Output Characteristics
Transfer Characteristics
20
16
12
8
20
16
12
8
V
GS
= 10 thru 5 V
4 V
T
= 125_C
C
4
4
25_C
3 V
-55_C
0
0
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
-
Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.080
0.064
0.048
0.032
0.016
0.000
1100
880
660
440
220
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
6
12
- Drain-to-Source Voltage (V)
DS
18
24
30
I
D
-
Drain Current (A)
V
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 4.3 A
V
= 10 V
DS
GS
I
D
I = 4.3 A
D
6
4
2
0
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
3
Si6544BDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.15
20
10
0.12
0.09
0.06
0.03
0.00
I
D
= 4.3 A
T
= 150_C
J
T
= 25_C
J
1
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
-
Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
0.2
200
160
120
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
80
40
0
-3
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
10
1
10
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
10
1
Limited by r
DS(on)
1 ms
10 ms
100 ms
1 s
0.1
T
= 25_C
C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
4
Si6544BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 120_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
5
Si6544BDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 10 thru 5 V
16
12
8
4 V
T
= 125_C
C
4
4
3 V
4
25_C
-55_C
0
0
0
1
2
3
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
-
Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1100
880
660
440
220
0
0.15
0.12
0.09
0.06
0.03
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
6
12
- Drain-to-Source Voltage (V)
DS
18
24
30
I
D
-
Drain Current (A)
V
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 3.8 A
V
= 10 V
DS
GS
I
D
I = 3.8 A
D
6
4
2
0
0.0
3.2
6.4
9.6
12.8
16.0
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
6
Si6544BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
20
10
0.16
0.12
0.08
0.04
0.00
I
D
= 3.8 A
T
= 150_C
J
T
= 25_C
J
1
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
-
Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.4
200
160
120
I
D
= 250 mA
0.2
80
40
0
0.0
-0.2
-0.4
-3
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
10
1
10
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
10
1
Limited by r
DS(on)
1 ms
10 ms
100 ms
1 s
0.1
T
= 25_C
C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
7
Si6544BDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 120_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
www.vishay.com
8
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