SI6913DQ [VISHAY]
Dual P-Channel 12-V (D-S) MOSFET; 双P通道12 -V （D -S ）的MOSFET
| 型号： | SI6913DQ |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6913DQ
Vishay Siliconix
New Product
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
D Load Switch
0.021 @ V = -4.5 V
GS
-5.8
-5.0
-4.4
D Battery Switch
0.028 @ V = -2.5 V
GS
-12
0.037 @ V = -1.8 V
GS
S
S
1
2
TSSOP-8
G
1
G
2
D
1
D
1
8
2
2
2
D
S
S
S
S
1
1
1
2
3
4
7
6
5
G
G
2
Top View
D
1
D
2
Ordering Information: Si6913DQ-T1
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-12
DS
GS
V
V
"8
T
= 25_C
= 70_C
-5.8
-4.6
-4.9
-3.9
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
-30
DM
a
Continuous Source Current (Diode Conduction)
I
-1.0
1.14
0.73
-0.7
0.83
0.53
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
86
124
52
110
150
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
www.vishay.com
1
Si6913DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -400 mA
-0.40
-0.9
V
GS(th)
DS
GS D
V
= 0 V, V = "8 V
GS
I
DS
"100
nA
GSS
V
= -12 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= -12 V, V = 0 V, T = 70_C
-25
DS
GS
J
a
On-State Drain Current
I
V
= -5 V, V = -4.5 V
-20
A
D(on)
DS
GS
V
= -4.5 V, I = -5.8 A
0.016
0.021
0.021
0.028
GS
GS
GS
D
a
V
V
= -2.5 V, I = -5.0 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.029
0.037
= -1.8 V, I = -4.4 A
D
a
Forward Transconductance
g
V
= -5 V, I = -5.8 A
25
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= -1.0 A, V = 0 V
-0.61
-1.1
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
18.5
2.7
5.0
4.6
45
28
g
Q
gs
Q
gd
V
= -6 V, V = -4.5 V, I = -5.8 A
nC
DS
GS
D
R
g
f = 1.0 MHz
W
t
70
d(on)
t
r
80
120
200
120
100
V
= -6 V, R = 6 W
L
GEN G
DD
^ -1 A, V
I
= -4.5 V, R = 6 W
D
Turn-Off Delay Time
Fall Time
t
130
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.0 A, di/dt = 100 A/ms
65
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transfer Characteristics
Output Characteristics
30
24
18
12
6
30
V
= 5 thru 2.5 V
GS
T
C
= -55_C
25_C
2 V
24
18
12
6
125_C
1.5 V
0
0
0.0
0.5
V
1.0
1.5
2.0
2.5
0
1
2
3
4
5
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
www.vishay.com
2
Si6913DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.10
3500
3000
2500
2000
1500
1000
500
0.08
0.06
C
iss
V
= 1.8 V
GS
0.04
0.02
0.00
C
oss
V
V
= 2.5 V
= 4.5 V
GS
GS
C
rss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.60
1.40
1.20
1.00
0.80
0.60
V
D
= 6 V
V
D
= 4.5 V
GS
DS
I
= 5.8 A
I = 5.8 A
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
T = 150_C
J
I
D
= 5.8 A
T = 25_C
J
1
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
6
7
8
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
www.vishay.com
3
Si6913DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
80
0.4
0.3
0.2
I
D
= 400 mA
60
40
20
0.1
0.0
-0.1
-0.2
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by r
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25_C
C
Single Pulse
dc
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 124_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
www.vishay.com
4
Si6913DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72368
S-31914—Rev. A, 15-Sep-03
www.vishay.com
5
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