SI6975DQ [VISHAY]
Dual P-Channel 12-V (D-S) MOSFET; 双P通道12 -V （D -S ）的MOSFET
| 型号： | SI6975DQ |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6975DQ
Vishay Siliconix
New Product
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.027 @ V = –4.5 V
–5.1
–4.5
–3.9
GS
0.035 @ V = –2.5 V
GS
–12
0.046 @ V = –1.8 V
GS
S
1
S
2
TSSOP-8
G
G
2
1
D
D
1
2
3
4
8
7
6
5
1
2
2
2
D
S
1
S
1
1
S
S
Si6975DQ
G
G
2
Top View
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–12
DS
GS
V
V
"8
T
= 25_C
= 70_C
–5.1
–4.1
–4.3
–3.5
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
–30
DM
a
Continuous Source Current (Diode Conduction)
I
–1.0
1.14
0.73
–0.7
0.83
0.53
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
86
124
52
110
150
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71319
S-02318—Rev. A, 23-Oct-00
www.vishay.com
1
Si6975DQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –5 mA
–0.45
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "8 V
GS
I
"100
nA
GSS
V
= –9.6 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –9.6 V, V = 0 V, T = 70_C
–25
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –4.5 V
–20
A
D(on)
GS
V
= –4.5 V, I = –5.1 A
0.022
0.028
0.027
0.035
GS
GS
GS
D
W
W
a
V
V
= –2.5 V, I = –4.5 A
D
Drain-Source On-State Resistance
r
DS(on)
0.037
0.046
= –1.8 V, I = –3.9 A
D
a
Forward Transconductance
g
V
= –5 V, I = –5.1 A
20
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= –1.0 A, V = 0 V
–0.65
–1.1
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
23
3.0
4.3
25
32
96
62
60
30
g
Q
Q
V
= –6 V, V = –4.5 V, I = –5.1 A
nC
ns
gs
gd
DS
GS
D
t
40
50
d(on)
t
r
V
= –6 V, R = 6 W
L
= –4.5 V, R = 6 W
GEN G
DD
I
^ –1 A, V
D
Turn-Off Delay Time
Fall Time
t
140
95
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= –1.0 A, di/dt = 100 A/ms
100
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transfer Characteristics
Output Characteristics
30
24
18
12
6
30
V
GS
= 5 thru 2.5 V
T
= –55_C
C
2 V
24
18
12
6
25_C
125_C
1.5 V
0.5, 1 V
0
0
0.0
0.5
V
1.0
1.5
2.0
2.5
0
2
4
6
8
10
– Gate-to-Source Voltage (V)
V
– Drain-to-Source Voltage (V)
GS
DS
Document Number: 71319
www.vishay.com
S-02318—Rev. A, 23-Oct-00
2
Si6975DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
4000
3200
2400
1600
800
0.10
C
iss
0.08
0.06
V
= 1.8 V
GS
0.04
0.02
0.00
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.60
1.40
1.20
1.00
0.80
0.60
V
= 6 V
= 5.1 A
V
= 4.5 V
DS
GS
I
D
I = 5.1 A
D
0
5
10
15
20
25
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
30
10
T
= 150_C
J
I
D
= 5.1 A
T
= 25_C
J
1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71319
www.vishay.com
S-02318—Rev. A, 23-Oct-00
3
Si6975DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
80
0.6
0.4
I
D
= 250 mA
60
40
20
0.2
0.0
–0.2
–0.4
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 124_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71319
www.vishay.com
S-02318—Rev. A, 23-Oct-00
4
相关型号：
SI6975DQ-E3
TRANSISTOR 4300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal
VISHAY
SI6975DQ-T1-GE3
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
VISHAY
SI6981DQ-E3
TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal
VISHAY
SI6983DQ-T1
TRANSISTOR 4600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明