SI7440DP-E3 [VISHAY]
TRANSISTOR 12 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power;型号: | SI7440DP-E3 |
厂家: | VISHAY |
描述: | TRANSISTOR 12 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 开关 脉冲 晶体管 |
文件: | 总4页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si7440DP
Vishay Siliconix
New Product
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
0.0065 @ V = 10 V
21
19
GS
30
APPLICATIONS
0.008 @ V = 4.5 V
GS
D DC/DC Converters
D Optimized for “Low-Side” Synchronous
Rectifier Operation
PowerPAKt SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
21
17
12
9
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
4.3
5.4
3.4
1.6
1.9
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
52
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.3
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71623
S-03842—Rev. A, 28-May-01
www.vishay.com
1
Si7440DP
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
40
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.0053
0.0065
0.008
V
= 10 V, I = 21 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 19 A
0.0065
65
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 21 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 4.3 A, V = 0 V
0.72
1.2
35
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
g
29.0
10.5
10.0
1.4
18
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 21 A
nC
DS
GS
D
R
G
W
t
t
28
25
d(on)
t
r
16
V
DD
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
75
180
65
ns
d(off)
t
f
41
Source-Drain Reverse Recovery Time
t
rr
I
F
= 4.3 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 4 V
GS
50
40
30
20
10
0
3 V
T
C
= 125_C
25_C
–55_C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71623
S-03842—Rev. A, 28-May-01
www.vishay.com
2
Si7440DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
5000
4000
3000
2000
1000
0
C
iss
0.008
V
GS
= 4.5 V
0.006
0.004
0.002
0.000
V
GS
= 10 V
C
oss
C
rss
0
10
20
D
30
40
50
60
0
4
8
12
16
20
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
V
GS
= 10 V
DS
I
D
= 21
A
I = 21 A
D
0
8
16
24
32
40
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
0.012
0.006
0.000
50
10
I
D
= 21 A
T
J
= 150_C
T
J
= 25_C
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71623
S-03842—Rev. A, 28-May-01
www.vishay.com
3
Si7440DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4
200
160
120
I
D
= 250 mA
0.2
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
80
40
0
–50 –25
0
25
50
75
100 125 150
0.1
0.001
0.01
1
10
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71623
S-03842—Rev. A, 28-May-01
www.vishay.com
4
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