SI7485DP-T1-E3 [VISHAY]
Trans MOSFET P-CH 20V 12.5A 8-Pin PowerPAK SO T/R;
| 型号： | SI7485DP-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET P-CH 20V 12.5A 8-Pin PowerPAK SO T/R 开关 晶体管 |
| 文件： | 总6页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7485DP
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 20
Available
0.0073 at VGS = - 4.5 V
0.0090 at VGS = - 2.5 V
0.013 at VGS = - 1.8 V
•
TrenchFET® Power MOSFETs
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
- 20
- 18
- 15
APPLICATIONS
PowerPAK SO-8
•
Battery Switch for Portable Devices
S
6.15 mm
5.15 mm
1
S
2
S
S
3
G
4
D
8
D
G
7
D
6
D
5
Bottom View
D
P-Channel MOSFET
Ordering Information: Si7485DP-T1-E3 (Lead (Pb)-free)
Si7485DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
- 20
8
V
TA = 25 °C
TA = 70 °C
- 20
- 12.5
- 9.5
Continuous Drain Current (TJ = 150 °C)a
ID
- 16.5
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
- 50
- 4.5
5
- 1.6
1.8
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
3.2
1.1
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
20
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
25
68
Maximum Junction-to-Ambienta
RthJA
54
°C/W
Maximum Junction-to-Case (Drain)
RthJC
1.7
2.2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
1
Si7485DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 1 mA
Gate Threshold Voltage
- 0.4
- 0.9
100
- 1
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 70 °C
VDS ≥ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 20 A
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 10
On-State Drain Currenta
ID(on)
- 40
0.006
0.0074
0.0106
80
0.0073
0.0090
0.013
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = - 2.5 V, ID = - 18 A
GS = - 1.8 V, ID = - 15 A
Ω
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 15 V, ID = - 20 A
IS = - 4.5 A, VGS = 0 V
S
V
VSD
- 0.62
- 1.1
150
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
99
11.5
29
V
DS = - 10 V, VGS = - 5 V, ID = - 20 A
nC
2.4
80
Ω
td(on)
tr
td(off)
tf
120
210
540
260
140
360
170
V
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
ns
Source-Drain Reverse Recovery
Time
trr
IF = - 2.9 A, dI/dt = 100 A/µs
55
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 5 V thru 2 V
1.5 V
T
= 125 °C
C
25 °C
- 55 °C
0
1
2
3
4
5
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
Si7485DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11000
8800
6600
4400
2200
0
0.020
0.016
0.012
C
iss
V
= 1.8 V
GS
V
V
= 2.5 V
= 4.5 V
GS
0.008
0.004
0.000
C
8
GS
oss
C
rss
0
4
12
16
20
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 10 V
V
I
= 4.5 V
DS
GS
= 20 A
= 20 A
D
D
0
20
40
60
80
100
120
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
0.030
0.024
0.018
0.012
0.006
0.000
50
10
I
D
= 20 A
T
= 150 °C
J
T
= 25 °C
J
1
0.1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
3
Si7485DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
100
80
0.3
I
D
= 1 mA
0.2
0.1
60
40
20
0.0
- 0.1
- 0.2
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
DS(on)
1 ms
10
10 ms
100 ms
1 s
1
10 s
DC
0.1
T
= 25 °C
C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
Si7485DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72275.
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
5
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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