SI7810DN-T1-GE3 [VISHAY]

Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R;
SI7810DN-T1-GE3
型号: SI7810DN-T1-GE3
厂家: VISHAY    VISHAY
描述:

Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R

开关 脉冲 光电二极管 晶体管
文件: 总5页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si7810DN  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
5.4  
TrenchFET® Power MOSFET  
New Low Thermal Resistance  
0.062 at VGS = 10 V  
0.084 at VGS = 6 V  
RoHS  
100  
PowerPAK® 1212-8 Package with Low  
1.07 mm Profile  
COMPLIANT  
4.6  
PWM Optimized  
APPLICATIONS  
Primary Side Switch  
In-Rush Current Limiter  
PowerPAK 1212-8  
S
3.30 mm  
3.30 mm  
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View  
S
N-Channel MOSFET  
Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free)  
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
100  
20  
VGS  
TA = 25 °C  
A = 70 °C  
5.4  
4.3  
3.4  
2.8  
A
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
IDM  
IS  
20  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
Single Avalanche Current  
3.2  
1.3  
A
IAS  
EAS  
19  
18  
L = 0.1 mH  
Single Avalanche Energy (Duty Cycle 1 %)  
mJ  
W
T
T
A = 25 °C  
A = 70 °C  
3.8  
2.0  
1.5  
0.8  
Maximum Power Dissipationa  
PD  
Operating Junction and Storage Temperature Range  
Soldering Recommendationsb,c  
TJ, Tstg  
– 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
26  
Maximum  
Unit  
t 10 s  
33  
81  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
65  
°C/W  
Maximum Junction-to-Case (Drain)  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
RthJC  
1.9  
2.4  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 70689  
S-81544-Rev. C, 07-Jul-08  
www.vishay.com  
1
Si7810DN  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
Gate Threshold Voltage  
2
4.5  
100  
1
V
VDS = 0 V, VGS  
=
20 V  
Gate-Body Leakage  
nA  
VDS = 100 V, VGS = 0 V  
DS = 100 V, VGS = 0 V, TJ = 55 °C  
VDS 5 V, VGS = 10 V  
IDSS  
ID(on)  
Zero Gate Voltage Drain Current  
µA  
A
V
5
On-State Drain Currenta  
20  
VGS = 10 V, ID = 5.4 A  
0.052  
0.070  
12  
0.062  
0.084  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
VGS = 6 V, ID = 4.6 A  
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
VDS = 15 V, ID = 5.4 A  
IS = 3.2 A, VGS = 0 V  
S
V
VSD  
0.78  
1.2  
17  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
13.5  
3
V
DS = 50 V, VGS = 10 V, ID = 5.4 A  
nC  
ns  
4.6  
10  
15  
20  
15  
45  
15  
25  
30  
25  
90  
V
DD = 50 V, RL = 50 Ω  
ID 1 A, VGEN = 10 V, RG = 6 Ω  
td(off)  
tf  
Turn-Off DelayTime  
Fall Time  
trr  
IF = 3.2 A, dI/dt = 100 A/µs  
Source-Drain Reverse Recovery Time  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
20  
16  
12  
8
20  
16  
12  
8
6 V  
V
GS  
= 10 thru 7 V  
T
= 125 °C  
C
5 V  
4 V  
4
4
25 °C  
3
- 55°C  
6
0
0
0
1
2
3
4
5
0
1
2
4
5
7
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 70689  
S-81544-Rev. C, 07-Jul-08  
Si7810DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
1000  
800  
600  
400  
200  
0
C
iss  
V
GS  
= 6 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
20  
40  
60  
80  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
2.2  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
D
= 10 V  
V
I
= 50 V  
GS  
= 5.4 A  
DS  
I
= 5.4 A  
D
6
4
2
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10  
12  
14  
T
- Junction Temperature (°C)  
Q
- Total Gate Charge (nC)  
J
g
Gate Charge  
On-Resistance vs. Junction Temperature  
0.16  
0.12  
0.08  
0.04  
0.00  
20  
10  
T
= 150 °C  
J
I
D
= 5.4 A  
T
= 25 °C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 70689  
S-81544-Rev. C, 07-Jul-08  
www.vishay.com  
3
Si7810DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
0.6  
50  
0.4  
I
D
= 250µA  
40  
30  
0.2  
0.0  
- 0.2  
- 0.4  
- 0.6  
- 0.8  
- 1.0  
- 1.2  
20  
10  
0
0.01  
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.1  
1
10  
100  
600  
T
- Temperature (°C)  
J
Time (s)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65 °C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
10  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (s)  
10  
1
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?70689.  
www.vishay.com  
4
Document Number: 70689  
S-81544-Rev. C, 07-Jul-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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