SI7810DN-T1-GE3
更新时间：2024-10-21 19:12:35
品牌：VISHAY
描述：Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R
概述
规格参数
数据手册SI7810DN-T1-GE3 概述
Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R 功率场效应晶体管
SI7810DN-T1-GE3 规格参数
| 生命周期： | Active | 包装说明： | SMALL OUTLINE, S-PDSO-C5 |
| 针数： | 8 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 1.54 |
| 雪崩能效等级（Eas）： | 18 mJ | 外壳连接： | DRAIN |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 100 V |
| 最大漏极电流 (Abs) (ID)： | 3.4 A | 最大漏极电流 (ID)： | 3.4 A |
| 最大漏源导通电阻： | 0.062 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | S-PDSO-C5 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 5 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | SQUARE | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 3.8 W | 最大脉冲漏极电流 (IDM)： | 20 A |
| 认证状态： | Not Qualified | 子类别： | FET General Purpose Powers |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | C BEND | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI7810DN-T1-GE3 数据手册
通过下载SI7810DN-T1-GE3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si7810DN
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
Halogen-free Option Available
VDS (V)
RDS(on) (Ω)
ID (A)
5.4
TrenchFET® Power MOSFET
New Low Thermal Resistance
0.062 at VGS = 10 V
0.084 at VGS = 6 V
RoHS
100
PowerPAK® 1212-8 Package with Low
1.07 mm Profile
COMPLIANT
4.6
•
PWM Optimized
APPLICATIONS
•
Primary Side Switch
•
In-Rush Current Limiter
PowerPAK 1212-8
S
3.30 mm
3.30 mm
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
S
N-Channel MOSFET
Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free)
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
100
20
VGS
TA = 25 °C
A = 70 °C
5.4
4.3
3.4
2.8
A
Continuous Drain Current (TJ = 150 °C)a
ID
T
IDM
IS
20
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
3.2
1.3
A
IAS
EAS
19
18
L = 0.1 mH
Single Avalanche Energy (Duty Cycle 1 %)
mJ
W
T
T
A = 25 °C
A = 70 °C
3.8
2.0
1.5
0.8
Maximum Power Dissipationa
PD
Operating Junction and Storage Temperature Range
Soldering Recommendationsb,c
TJ, Tstg
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
26
Maximum
Unit
t ≤ 10 s
33
81
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
65
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
RthJC
1.9
2.4
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
www.vishay.com
1
Si7810DN
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
2
4.5
100
1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = 100 V, VGS = 0 V
DS = 100 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
20
VGS = 10 V, ID = 5.4 A
0.052
0.070
12
0.062
0.084
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = 6 V, ID = 4.6 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 5.4 A
IS = 3.2 A, VGS = 0 V
S
V
VSD
0.78
1.2
17
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
13.5
3
V
DS = 50 V, VGS = 10 V, ID = 5.4 A
nC
ns
4.6
10
15
20
15
45
15
25
30
25
90
V
DD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
td(off)
tf
Turn-Off DelayTime
Fall Time
trr
IF = 3.2 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
20
16
12
8
20
16
12
8
6 V
V
GS
= 10 thru 7 V
T
= 125 °C
C
5 V
4 V
4
4
25 °C
3
- 55°C
6
0
0
0
1
2
3
4
5
0
1
2
4
5
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
0.20
0.16
0.12
0.08
0.04
0.00
1000
800
600
400
200
0
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
20
40
60
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.2
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
D
= 10 V
V
I
= 50 V
GS
= 5.4 A
DS
I
= 5.4 A
D
6
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
10
12
14
T
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.16
0.12
0.08
0.04
0.00
20
10
T
= 150 °C
J
I
D
= 5.4 A
T
= 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
www.vishay.com
3
Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
0.6
50
0.4
I
D
= 250µA
40
30
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
20
10
0
0.01
- 50 - 25
0
25
50
75
100 125 150
0.1
1
10
100
600
T
- Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70689.
www.vishay.com
4
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
SI7810DN-T1-GE3 相关器件
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| SI7815 | SECOS | 3-Terminal Positive Voltage Regulator | 获取价格 |
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| SI7818DN-T1-E3 | VISHAY | Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R | 获取价格 |
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| SI7818DN-T1-GE3 | VISHAY | Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R | 获取价格 |
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