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SI7840DP-T1

更新时间：2024-10-20 18:43:29
品牌：VISHAY
描述：Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8

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SI7840DP-T1 概述

Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8 功率场效应晶体管

SI7840DP-T1 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：POWERPAK, SOP-8Reach Compliance Code：compliant
风险等级：5.33雪崩能效等级（Eas）：80 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.0095 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-C5
JESD-609代码：e0元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：5 W
最大脉冲漏极电流 (IDM)：40 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：C BEND端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7840DP-T1 数据手册

通过下载SI7840DP-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7840DP  
Vishay Siliconix  
N-Channel 30-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0095 @ V = 10 V  
18  
15  
GS  
30  
0.014 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Optimized for “High-Side” Synchronous  
Rectifier Operation  
PowerPAK SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7840DP-T1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
18  
14  
11  
8
A
a
Continuous Drain Current (T = 150__C)  
I
D
J
T
A
Pulsed Drain Current  
I
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
4.1  
1.6  
S
I
AS  
40  
80  
L = 0.1 mH  
Avalanche Energy  
E
mJ  
AS  
T
= 25_C  
= 70_C  
5.0  
3.2  
1.9  
1.2  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
20  
52  
25  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
2.1  
2.6  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71624  
S-31728—Rev. D, 18-Aug-03  
www.vishay.com  
1
 
Si7840DP  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
"100  
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
DS  
GS  
J
NO TAG  
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0077  
0.0095  
0.014  
V
= 10 V, I = 18 A  
D
GS  
NO TAG  
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 15 A  
0.0115  
40  
GS  
DS  
D
NO TAG  
Forward Transconductance  
g
fs  
V
= 15 V, I = 18 A  
S
V
D
NO TAG  
Diode Forward Voltage  
V
I
S
= 4.1 A, V = 0 V  
0.75  
1.2  
23  
SD  
GS  
DynamicNO TAG  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate-Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
15.5  
3.8  
6
Q
gs  
Q
gd  
V
= 15 V, V = 5.0 V, I = 18 A  
nC  
DS  
GS  
D
R
g
0.2  
0.8  
17  
14  
39  
19  
50  
1.2  
26  
21  
60  
30  
80  
W
t
d(on)  
t
r
V
= 15 V, R = 15 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 4.1 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
40  
32  
24  
16  
8
V
= 10 thru 4 V  
GS  
32  
24  
16  
8
3 V  
T
C
= 125_C  
25_C  
-55_C  
0
0
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71624  
S-31728—Rev. D, 18-Aug-03  
www.vishay.com  
2
Si7840DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.020  
2500  
2000  
1500  
1000  
500  
0.016  
C
iss  
V
= 4.5 V  
GS  
0.012  
0.008  
0.004  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
0
8
16  
24  
32  
40  
0
4
8
12  
16  
20  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
V
= 10 V  
GS  
DS  
I
D
= 18  
A
I = 18 A  
D
6
4
2
0
0
6
12  
18  
24  
30  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
g
- Total Gate Charge (nC)  
T
J
- Junction Temperature (_C)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
I
D
= 18 A  
T = 150_C  
J
10  
T = 25_C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71624  
S-31728—Rev. D, 18-Aug-03  
www.vishay.com  
3
Si7840DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-to-Ambient  
0.4  
200  
160  
120  
I
D
= 250 mA  
0.2  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
80  
40  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
- Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 68_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71624  
S-31728—Rev. D, 18-Aug-03  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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