SI7900EDN [VISHAY]

Specification Comparison; 规格比较

SI7900EDN


型号：	SI7900EDN
厂家：	VISHAY TELEFUNKEN
描述：	Specification Comparison 规格比较晶体晶体管功率场效应晶体管开关脉冲
文件：	总1页 (文件大小：34K)
下载：	下载PDF数据表文档文件

SI7900EDN-E3

Power Field-Effect Transistor, 6A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1212-8, POWERPAK-8

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0 VISHAY

SI7900EDN-T1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

SI7901EDN

Dual P-Channel 20-V (D-S) MOSFET

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23 VISHAY

SI7901EDN

Dual P-Channel 20-V (D-S) MOSFET

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23 VISHAY

SI7901EDN

Dual P-Channel 20-V (D-S) MOSFET

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14 VISHAY

SI7901EDN-E3

TRANSISTOR 4.3 A, 20 V, 0.048 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

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0 VISHAY

SI7901EDN-T1

Transistor

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0 VISHAY

SI7901EDN-T1-GE3

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

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0 VISHAY

SI7902EDN

Dual N-Channel 30-V (D-S) MOSFET, Common Drain

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9 VISHAY

SI7902EDN

Dual N-Channel 30-V (D-S) MOSFET, Common Drain

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12 VISHAY

SI7902EDN

Dual N-Channel 30-V (D-S) MOSFET, Common Drain

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22 VISHAY

SI7902EDN-E3

TRANSISTOR 5.6 A, 30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

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0 VISHAY

SI7902EDN-T1-E3

TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power

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0 VISHAY

SI7904BDN

Dual N-Channel 20-V (D-S) MOSFET

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32 VISHAY

SI7904BDN-T1-E3

Dual N-Channel 20-V (D-S) MOSFET

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43 VISHAY

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