SI7913DN [VISHAY]

Dual P-Channel 20-V (D-S) MOSFET; 双P通道20 - V(D -S)的MOSFET
SI7913DN
型号: SI7913DN
厂家: VISHAY    VISHAY
描述:

Dual P-Channel 20-V (D-S) MOSFET
双P通道20 - V(D -S)的MOSFET

文件: 总5页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si7913DN  
Vishay Siliconix  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D New Low Thermal Resistance PowerPAKr  
Package  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.037 @ V = 4.5 V  
7.4  
6.5  
5.5  
GS  
RoHS  
COMPLIANT  
APPLICATIONS  
D Portable  
20  
0.048 @ V = 2.5  
V
V
GS  
0.066 @ V = 1.8  
GS  
PA Switch  
Battery Switch  
Load Switch  
PowerPAK 1212-8  
S
S
S1  
3.30 mm  
3.30 mm  
1
G
G
G1  
2
S2  
3
G2  
4
D1  
8
D1  
7
D
D
P-Channel MOSFET  
D2  
6
D2  
5
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)  
P-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
V
V
GS  
"8  
T
= 25_C  
= 85_C  
5.0  
3.6  
7.4  
5.3  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
20  
a
continuous Source Current (Diode Conduction)  
I
2.3  
2.8  
1.1  
1.3  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.5  
0.85  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
J
stg  
_C  
b,c  
Soldering Recommendations (Peak Temperature)  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
35  
75  
4
44  
94  
5
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Case  
thJC  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure  
adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72615  
S-51129—Rev. B, 13-Jun-05  
www.vishay.com  
1
Si7913DN  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
0.40  
1.0  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "8 V  
"100  
nA  
GSS  
DS  
GS  
V
= 20 V, V = 0 V  
1  
5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 20 V, V = 0 V, T = 85_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v 5 V, V = 4.5 V  
20  
A
D(on)  
GS  
V
= 4.5 V, I = 7.4 A  
0.029  
0.038  
0.051  
0.037  
0.048  
0.066  
GS  
D
a
V
= 2.5 V, I = 6.5 A  
Drain-Source On-State Resistance  
r
W
GS  
D
DS(on)  
V
= 1.8 V, I = 1.5 A  
GS  
D
a
Forward Transconductance  
g
20  
S
V
V
= 6 V, I = 7.4 A  
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= 2.3 A, V = 0 V  
0.74  
1.2  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
15.3  
2.0  
3.9  
7
24  
g
Q
Q
V
= 10 V, V = 4.5 V, I = 7.4 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
f = 1 MHz  
W
t
20  
30  
110  
110  
225  
50  
d(on)  
t
r
70  
V
= 10 V, R = 10 W  
L
GEN g  
DD  
I
D
^ 1 A, V  
= 4.5 V, R = 6 W  
Turn-Off Delay Time  
Fall Time  
t
72  
ns  
d(off)  
t
f
150  
25  
Source-Drain Reverse Recovery Time  
Notes  
t
rr  
I = 2.3 A, di/dt = 100 A/ms  
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
20  
16  
12  
8
20  
16  
12  
8
V
GS  
= 5 thru 2.5 V  
2 V  
1.5 V  
1 V  
T
= 125_C  
C
4
4
25_C  
55_C  
0
0
0
1
2
3
4
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V
DS  
Drain-to-Source Voltage (V)  
V
GS  
Gate-to-Source Voltage (V)  
Document Number: 72615  
S-51129—Rev. B, 13-Jun-05  
www.vishay.com  
2
Si7913DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
2100  
1800  
1500  
1200  
900  
600  
300  
0
0.10  
0.08  
C
iss  
V
GS  
= 1.8 V  
0.06  
0.04  
0.02  
0.00  
V
V
= 2.5 V  
= 4.5 V  
GS  
GS  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
I
D
Drain Current (A)  
V
DS  
Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 10 V  
V
GS  
= 4.5 V  
DS  
I
= 7.4  
A
I = 7.4 A  
D
0
4
8
12  
16  
20  
50 25  
0
25  
50  
75  
100 125 150  
Q
Total Gate Charge (nC)  
T
Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
20  
I
D
= 7.4 A  
10  
T
= 150_C  
J
I
D
= 1.5 A  
T
= 25_C  
J
1
0.0  
0
1
2
3
4
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
Source-to-Drain Voltage (V)  
V
GS  
Gate-to-Source Voltage (V)  
Document Number: 72615  
S-51129—Rev. B, 13-Jun-05  
www.vishay.com  
3
Si7913DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.4  
50  
40  
I
D
= 250 mA  
0.3  
0.2  
30  
0.1  
20  
10  
0.0  
0.1  
0.2  
0
50 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
100  
600  
T
Temperature (_C)  
Time (sec)  
J
Safe Operating Area, Junction-To-Ambient  
100  
Limited by r  
DS(on)  
I
Limited  
DM  
10  
P(t) = 0.001  
P(t) = 0.01  
1
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
= 25_C  
A
P(t) = 10  
dc  
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72615  
S-51129—Rev. B, 13-Jun-05  
www.vishay.com  
4
Si7913DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
Single Pulse  
0.01  
4  
3  
2  
1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and  
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see  
http://www.vishay.com/ppg?72615.  
Document Number: 72615  
S-51129—Rev. B, 13-Jun-05  
www.vishay.com  
5

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