SI7942DP-T1 [VISHAY]
Dual N-Channel 100-V (D-S) MOSFET; 双N沟道100 -V （D -S ）的MOSFET
| 型号： | SI7942DP-T1 |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 100-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7942DP
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
ꢀ
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ꢁ
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ꢀ New Low Thermal Resistance PowerPAK
ꢀ Dual MOSFET for Space Savings
ꢁ
Package
VDS (V)
rDS(on) (W)
ID (A)
0.049 @ V = 10 V
5.9
5.5
GS
APPLICATIONS
100
0.060 @ V = 6 V
GS
ꢀ Synchronous Buck Shoot-Through Resistant
ꢀ Optimized for Primary Side Switch
PowerPAK SO-8
D
1
D
2
S1
5.15 mm
6.15 mm
1
G1
2
S2
3
G2
4
D1
G
1
G
2
8
D1
7
D2
6
D2
5
S
1
S
Bottom View
Ordering Information: Si7942DP-T1
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
100
DS
GS
V
V
"20
T
= 25ꢂC
= 70ꢂC
5.9
4.7
3.8
3.0
A
a
Continuous Drain Current (T = 150ꢂC)
I
D
J
T
A
Pulsed Drain Current
I
20
A
DM
a
Continuous Source Current (Diode Conduction)
Single Avalanche Current
I
2.9
1.2
S
L = 0.1 mH
I
AS
20
20
Single Avalanche Energy
E
mJ
AS
T
= 25ꢂC
= 70ꢂC
3.5
2.2
1.4
0.9
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
ꢂ
C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
60
35
85
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
ꢂ
C
/
W
Maximum Junction-to-Case (Drain)
2.2
2.7
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
www.vishay.com
1
Si7942DP
Vishay Siliconix
SPECIFICATIONS (T = 25ꢂ C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2
4.0
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 80 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 80 V, V = 0 V, T = 55ꢂC
5
DS
GS
J
a
On-State Drain Current
I
20
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.041
0.049
0.060
V
= 10 V, I = 5.9 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6 V, I = 5.5 A
0.048
14
GS
D
a
Forward Transconductance
g
fs
V
I
= 15 V, I = 5.9 A
S
V
DS
D
a
Diode Forward Voltage
V
= 2.9 A, V = 0 V
0.77
1.2
24
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Q
g
16
3.8
5.5
2.2
15
15
35
20
50
Q
gs
Q
gd
V
=50 V, V = 10 V, I = 5.9 A
nC
DS
GS
D
R
g
W
t
25
25
55
30
75
d(on)
t
r
V
= 50 V, R = 50 W
L
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.9 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
= 10 thru 6 V
GS
16
12
8
5 V
T
C
= 125ꢂC
4
4
25ꢂC
4 V
3 V
-55ꢂC
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
www.vishay.com
2
Si7942DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.08
1500
1200
900
600
300
0
0.06
V
= 6 V
GS
C
iss
0.04
0.02
0.00
V
= 10 V
GS
C
oss
C
rss
0
4
8
12
16
20
20
1.2
0
10
20
30
40
50
60
70
80
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 50 V
= 5.9 A
V
I
= 10 V
GS
D
DS
D
= 5.9 A
6
4
2
0
0
4
8
12
16
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (ꢂC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.12
0.10
0.08
0.06
0.04
0.02
0.00
40
10
T = 150ꢂC
J
I
D
= 5.9 A
I
= 1 A
D
T = 25ꢂC
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
www.vishay.com
3
Si7942DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
100
80
0.4
I
D
= 250 mA
60
40
0.0
-0.4
-0.8
-1.2
20
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
10
100
600
1
T
J
- Temperature (ꢂC)
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
I
DM
r
Limited
Limited
DS(on)
10
1
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25ꢂC
A
0.1
Single Pulse
P(t) = 10
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 60ꢂ C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
www.vishay.com
4
Si7942DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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