首页 > SI7942DP-T1

SI7942DP-T1

更新时间：2025-07-01 10:19:20
品牌：VISHAY
描述：Dual N-Channel 100-V (D-S) MOSFET

PDF下载

中文翻译

免费 PCB/SMT

SI7942DP-T1 概述

Dual N-Channel 100-V (D-S) MOSFET 双N沟道100 -V （D -S ）的MOSFET

SI7942DP-T1 数据手册

通过下载SI7942DP-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Si7942DP  
Vishay Siliconix  
Dual N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
ꢀ
T
r
e
n
c
h
F
E
T
ꢁ
P
o
w
e
r
M
O
S
F
E
T
ꢀ New Low Thermal Resistance PowerPAK  
ꢀ Dual MOSFET for Space Savings  
ꢁ
Package  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.049 @ V = 10 V  
5.9  
5.5  
GS  
APPLICATIONS  
100  
0.060 @ V = 6 V  
GS  
ꢀ Synchronous Buck Shoot-Through Resistant  
ꢀ Optimized for Primary Side Switch  
PowerPAK SO-8  
D
1
D
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
3
G2  
4
D1  
G
1
G
2
8
D1  
7
D2  
6
D2  
5
S
1
S
Bottom View  
Ordering Information: Si7942DP-T1  
2
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
DS  
GS  
V
V
"20  
T
= 25ꢂC  
= 70ꢂC  
5.9  
4.7  
3.8  
3.0  
A
a
Continuous Drain Current (T = 150ꢂC)  
I
D
J
T
A
Pulsed Drain Current  
I
20  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Single Avalanche Current  
I
2.9  
1.2  
S
L = 0.1 mH  
I
AS  
20  
20  
Single Avalanche Energy  
E
mJ  
AS  
T
= 25ꢂC  
= 70ꢂC  
3.5  
2.2  
1.4  
0.9  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
ꢂ
C
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
ꢂ
C
/
W
Maximum Junction-to-Case (Drain)  
2.2  
2.7  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72118  
S-03373—Rev. A, 03-Mar-03  
www.vishay.com  
1
Si7942DP  
Vishay Siliconix  
SPECIFICATIONS (T = 25ꢂ C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
4.0  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 80 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 80 V, V = 0 V, T = 55ꢂC  
5
DS  
GS  
J
a
On-State Drain Current  
I
20  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.041  
0.049  
0.060  
V
= 10 V, I = 5.9 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6 V, I = 5.5 A  
0.048  
14  
GS  
D
a
Forward Transconductance  
g
fs  
V
I
= 15 V, I = 5.9 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
= 2.9 A, V = 0 V  
0.77  
1.2  
24  
SD  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resostamce  
Turn-On Delay Time  
Rise Time  
Q
g
16  
3.8  
5.5  
2.2  
15  
15  
35  
20  
50  
Q
gs  
Q
gd  
V
=50 V, V = 10 V, I = 5.9 A  
nC  
DS  
GS  
D
R
g
W
t
25  
25  
55  
30  
75  
d(on)  
t
r
V
= 50 V, R = 50 W  
L
DD  
I
D
^ 1 A, V  
= 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.9 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
V
= 10 thru 6 V  
GS  
16  
12  
8
5 V  
T
C
= 125ꢂC  
4
4
25ꢂC  
4 V  
3 V  
-55ꢂC  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72118  
S-03373—Rev. A, 03-Mar-03  
www.vishay.com  
2
Si7942DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.08  
1500  
1200  
900  
600  
300  
0
0.06  
V
= 6 V  
GS  
C
iss  
0.04  
0.02  
0.00  
V
= 10 V  
GS  
C
oss  
C
rss  
0
4
8
12  
16  
20  
20  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
80  
I
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
I
= 50 V  
= 5.9 A  
V
I
= 10 V  
GS  
D
DS  
D
= 5.9 A  
6
4
2
0
0
4
8
12  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
g
- Total Gate Charge (nC)  
T
J
- Junction Temperature (ꢂC)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
40  
10  
T = 150ꢂC  
J
I
D
= 5.9 A  
I
= 1 A  
D
T = 25ꢂC  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
V
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
SD  
Document Number: 72118  
S-03373—Rev. A, 03-Mar-03  
www.vishay.com  
3
Si7942DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.8  
100  
80  
0.4  
I
D
= 250 mA  
60  
40  
0.0  
-0.4  
-0.8  
-1.2  
20  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
10  
100  
600  
1
T
J
- Temperature (ꢂC)  
Time (sec)  
Safe Operating Area, Junction-To-Ambient  
100  
I
DM  
r
Limited  
Limited  
DS(on)  
10  
1
P(t) = 0.0001  
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
= 25ꢂC  
A
0.1  
Single Pulse  
P(t) = 10  
dc  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
- Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60ꢂ C/W  
thJA  
(t)  
3. T  
- T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72118  
S-03373—Rev. A, 03-Mar-03  
www.vishay.com  
4
Si7942DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72118  
S-03373—Rev. A, 03-Mar-03  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

SI7942DP-T1 相关器件

型号 制造商 描述 价格 文档
SI7942DP-T1-E3 VISHAY Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R 获取价格
SI7942DP-T1-GE3 VISHAY 元器件封装:PowerPAK® SO-8; 获取价格
SI7942DP_06 VISHAY Dual N-Channel 100-V (D-S) MOSFET 获取价格
SI7943DP VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7943DP-E3 VISHAY TRANSISTOR 6 A, 30 V, 0.025 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7944DP-T1 VISHAY TRANSISTOR 9.8 A, 30 V, 0.0095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWERPACK, SO-8, FET General Purpose Power 获取价格
SI7945DP VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7945DP-T1 VISHAY Transistor 获取价格
SI7945DP-T1-E3 VISHAY Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK SO T/R 获取价格
SI7945DP-T1-GE3 VISHAY Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK SO T/R 获取价格

SI7942DP-T1 相关文章

  • 5V 过电压保护回路电路解析：复杂原理源于简单设计
    2025-07-04
    19
  • 先进封装：台积电、英特尔、三星等大厂的新战场
    2025-07-04
    27
  • 探秘台积电 SoW：从起源到应用的深度剖析
    2025-07-04
    18
  • 英特尔战略调整：舍弃 18A，全力进军 1.4nm 制程
    2025-07-04
    15

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286