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SI7971DP

更新时间：2025-06-30 10:19:20
品牌：VISHAY
描述：Dual P-Channel 12-V (D-S) MOSFET

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SI7971DP 概述

Dual P-Channel 12-V (D-S) MOSFET 双P通道12 -V （D -S ）的MOSFET

SI7971DP 数据手册

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Si7971DP  
Vishay Siliconix  
New Product  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr Package  
with Low 1.07-mm Profile  
0.018 @ V = -4.5 V  
-11.7  
-10.6  
-3.5  
GS  
APPLICATIONS  
-12  
0.022 @ V = -2.5  
V
V
GS  
D Load Switch  
0.029 @ V = -1.8  
GS  
PowerPAK SO-8  
S
1
S
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
G
G
2
1
3
G2  
4
D1  
8
D1  
7
D2  
6
D
1
D
2
D2  
Ordering Information: Si7971DP-T1  
5
P-Channel MOSFET  
P-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-12  
DS  
V
"8  
GS  
T
= 25_C  
= 70_C  
-7.5  
-6.0  
-11.7  
-9.4  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-30  
DM  
a
continuous Source Current (Diode Conduction)  
I
-2.9  
3.5  
-1.2  
1.4  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
2.2  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
3
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
3.7  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72357  
S-31610—Rev. A, 11-Aug-03  
www.vishay.com  
1
 
Si7971DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
V
= V , I = -450 mA  
-0.40  
-1.0  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "8 V  
"100  
nA  
GSS  
DS  
GS  
= -9.6 V, V = 0 V  
-1  
-5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= -9.6 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v -5 V, V = -4.5 V  
-30  
A
D(on)  
GS  
V
= -4.5 V, I = -11.7 A  
D
0.014  
0.018  
0.023  
0.018  
0.022  
0.029  
GS  
a
V
= -2.5 V, I = -10.6 A  
D
Drain-Source On-State Resistance  
r
W
GS  
DS(on)  
V
= -1.8 V, I = -3.5 A  
D
GS  
a
Forward Transconductance  
g
37  
S
V
V
= -15 V, I = -11.7 A  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
S
= -2.9 A, V = 0 V  
-0.7  
-1.2  
60  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
39  
6.5  
10  
g
Q
Q
V
DS  
= -6 V, V = -4.5 V, I = -11.7 A  
nC  
gs  
gd  
GS  
D
R
9.4  
38  
W
g
t
60  
90  
d(on)  
t
60  
r
V
= -6 V, R = 6 W  
L
DD  
I
D
^ -1 A, V  
= -4.5 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
280  
210  
120  
420  
320  
180  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = -2.9 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
30  
24  
18  
12  
6
V
GS  
= 10 thru 2 V  
24  
18  
12  
6
1.5 V  
T
= 125_C  
C
25_C  
-55_C  
1 V  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72357  
S-31610—Rev. A, 11-Aug-03  
www.vishay.com  
2
Si7971DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.06  
5000  
4000  
3000  
2000  
1000  
0
0.05  
0.04  
C
iss  
0.03  
0.02  
0.01  
0.00  
V
GS  
= 1.8 V  
V
V
= 2.5 V  
= 4.5 V  
GS  
C
oss  
C
rss  
GS  
0
6
12  
18  
24  
30  
0
2
4
6
8
10  
12  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 6 V  
= 11.7 A  
V
= 4.5 V  
DS  
GS  
I
D
I = 11.7 A  
D
0
10  
Q
20  
30  
40  
50  
-50  
-25  
0
25  
50  
75  
100 125 150  
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
30  
10  
T
= 150_C  
J
I
D
= 11.7 A  
I
D
= 3.5 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 72357  
S-31610—Rev. A, 11-Aug-03  
www.vishay.com  
3
Si7971DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.4  
30  
24  
18  
0.3  
I
D
= 450 mA  
0.2  
0.1  
12  
6
0.0  
-0.1  
-0.2  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001 0.01  
0.1  
1
10  
100  
1000  
T
- Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
10  
1
P(t) = 0.001  
P(t) = 0.01  
P(t) = 0.1  
I
D(on)  
Limited  
P(t) = 1  
P(t) = 10  
dc  
T
A
= 25_C  
0.1  
Single Pulse  
BV  
Limited  
DSS  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 60_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72357  
S-31610—Rev. A, 11-Aug-03  
www.vishay.com  
4
Si7971DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72357  
S-31610—Rev. A, 11-Aug-03  
www.vishay.com  
5

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