SI8472DB [VISHAY]

N-Channel 20-V (D-S) MOSFET; N通道20 -V (D -S )的MOSFET
SI8472DB
型号: SI8472DB
厂家: VISHAY    VISHAY
描述:

N-Channel 20-V (D-S) MOSFET
N通道20 -V (D -S )的MOSFET

文件: 总9页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si8472DB  
Vishay Siliconix  
N-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
TrenchFET Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
VDS (V)  
RDS(on) ()  
Qg (Typ.)  
I
D (A)a, e  
0.044 at VGS = 4.5 V  
0.050 at VGS = 2.5 V  
0.056 at VGS = 1.8 V  
0.070 at VGS = 1.5 V  
4.5  
4.2  
4.0  
1.5  
®
20  
6.8 nC  
APPLICATIONS  
Baseband Switch  
DC/DC Conversion  
- Boost Converters  
Smart Phones, Portable Media Players  
MICRO FOOT  
Bump Side View  
Backside View  
D
S
S
G
D
2
1
4
G
3
Device Marking: 8472  
xxx = Date/Lot Traceability Code  
S
N-Channel MOSFET  
Ordering Information: Si8472DB-T2-E1 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
8
T
T
A = 25 °C  
A = 70 °C  
4.5a  
3.6a  
3.3b  
2.6b  
20  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current (t = 300 µs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
1.5a  
0.65b  
1.8a  
1.1a  
0.78b  
0.5b  
- 55 to 150  
260  
Continuous Source-Drain Diode Current  
T
T
A = 25 °C  
A = 70 °C  
Maximum Power Dissipation  
PD  
W
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Package Reflow Conditionsc  
VPR  
°C  
IR/Convection  
260  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.  
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.  
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.  
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.  
e. Based on TA = 25 °C.  
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, b  
Maximum Junction-to-Ambientc, d  
Symbol  
Typical  
55  
Maximum  
70  
Unit  
t = 10 s  
t = 10 s  
RthJA  
°C/W  
125  
160  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with full copper.  
b. Maximum under steady state conditions is 100 °C/W.  
c. Surface mounted on 1" x 1" FR4 board with minimum copper.  
d. Maximum under steady state conditions is 190 °C/W.  
SPECIFICATIONS (T = 25 °C, unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
VDS/TJ  
VGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = 250 µA  
ID = 250 µA  
Drain-Source Breakdown Voltage  
20  
V
V
DS Temperature Coefficient  
16  
mV/°C  
VGS(th) Temperature Coefficient  
- 2.6  
VDS = VGS, ID = 250 µA  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
0.4  
0.9  
100  
1
V
IGSS  
VDS = 0 V, VGS  
=
8 V  
nA  
VDS = 20 V, VGS = 0 V  
DS = 20 V, VGS = 0 V, TJ = 70 °C  
VDS - 5 V, VGS = 4.5 V  
VGS = 4.5 V, ID = 1.5 A  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
10  
ID(on)  
10  
0.036  
0.041  
0.046  
0.050  
16  
0.044  
0.050  
0.056  
0.070  
V
GS = 2.5 V, ID = 1 A  
GS = 1.8 V, ID = 1 A  
Drain-Source On-State Resistancea  
RDS(on)  
V
V
GS = 1.5 V, ID = 0.5 A  
Forward Transconductancea  
gfs  
VDS = 10 V, ID = 1.5 A  
S
Dynamicb  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
630  
105  
42  
12  
6.8  
0.8  
1.1  
5.3  
7
VDS = 10 V, VGS = 0 V, f = 1 MHz  
VDS = 10 V, VGS = 8 V, ID = 1.5 A  
pF  
18  
11  
Qg  
Total Gate Charge  
nC  
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
V
DS = 10 V, VGS = 4.5 V, ID = 1.5 A  
VGS = 0.1 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
15  
30  
60  
20  
10  
30  
60  
20  
15  
30  
10  
5
V
DD = - 10 V, RL = 6.7   
ID 1.5 A, VGEN = - 4.5 V, Rg = 1   
Turn-Off Delay Time  
Fall Time  
ns  
Turn-On Delay Time  
Rise Time  
15  
30  
10  
V
DD = - 10 V, RL = 6.7   
ID - 1.5 A, VGEN = - 8 V, Rg = 1   
Turn-Off Delay Time  
Fall Time  
www.vishay.com  
2
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
SPECIFICATIONS (T = 25 °C, unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
IS  
ISM  
VSD  
trr  
TA = 25 °C  
1.5  
20  
A
Pulse Diode Forward Current  
Body Diode Voltage  
IS = 1.5 A, VGS = 0  
0.7  
15  
6
1.2  
30  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
15  
IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C  
7
ns  
tb  
8
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
10  
8
20  
16  
12  
8
VGS = 5 V thru 2 V  
VGS = 1.5 V  
6
TC = 25 °C  
4
TC = 125 °C  
2
4
VGS = 1 V  
TC = - 55 °C  
1.2 1.5  
0
0
0.0  
0.3  
0.6  
0.9  
0.0  
0.5  
1.0  
1.5  
2.0  
VGS - Gate-to-Source Voltage (V)  
VDS - Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
0.10  
0.08  
0.06  
0.04  
0.02  
800  
600  
400  
200  
0
Ciss  
VGS = 1.5 V  
VGS = 1.8 V  
VGS = 2.5 V  
VGS = 4.5 V  
Coss  
Crss  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
ID - Drain Current (A)  
VDS - Drain-to-Source Voltage (V)  
On-Resistance vs. Drain Current and Gate Voltage  
Capacitance  
8
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
ID = 1.5 A  
7
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.5 A  
VDS = 10 V  
6
5
VDS = 16 V  
VDS = 5 V  
4
3
2
1
0
VGS = 1.5 V; ID = 0.5 A  
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10  
12  
TJ - Junction Temperature (°C)  
Qg - Total Gate Charge (nC)  
Gate Charge  
On-Resistance vs. Junction Temperature  
www.vishay.com  
4
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
100  
10  
1
ID = 1.5 A  
TJ = 150 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 25 °C  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)  
VGS - Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
25  
20  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
15  
10  
ID = 250 μA  
5
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
100  
1000  
TJ - Temperature (°C)  
Time (s)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
100  
Limited by RDS(on)  
*
10  
1
100 μs  
1 ms  
10 ms  
100 ms  
10 s, 1 s  
DC  
0.1  
0.01  
TA = 25 °C  
BVDSS Limited  
0.1  
1
10  
VDS - Drain-to-Source Voltage (V)  
* VGS > minimum VGS at which RDS(on) is specified  
100  
Safe Operating Area, Junction-to-Ambient  
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
5
4
3
2
1
0
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
TA - Case Temperature (°C)  
T
A
- Ambient Temperature (°C)  
Current Derating*  
Power Derating  
Note:  
When Mounted on 1" x 1" FR4 with Full Copper.  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
www.vishay.com  
6
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
0.05  
P
DM  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 100 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper)  
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
0.1  
P
DM  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 190 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper)  
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
www.vishay.com  
7
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8472DB  
Vishay Siliconix  
PACKAGE OUTLINE  
MICRO FOOT 1 mm x 1 mm: 4-BUMP (2 x 2, 0.5 mm PITCH)  
4 x Ø 0.24 to 0.26 Note 4  
Solder Mask ~ Ø 0.25  
2
1
3
4
Bump Note 2  
Recommended Land  
4 x Ø b  
S
D
S
8472  
G
XXX  
s
e
Mark on Backside of Die  
D
Notes (Unless otherwise specified):  
1. All dimensions are in millimeters.  
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter 0.30 mm to 0.32 mm.  
3. Backside surface is coated with a Ti/Ni/Ag layer.  
4. Non-solder mask defined copper landing pad.  
5. is location of pin 1.  
Millimetersa  
Inches  
Nom.  
Dim.  
Min.  
0.462  
0.220  
0.242  
0.300  
Nom.  
0.505  
0.250  
0.255  
0.310  
0.500  
0.250  
0.960  
Max.  
0.548  
0.280  
0.268  
0.320  
Min.  
Max.  
A
A1  
A2  
b
0.0181  
0.0086  
0.0095  
0.0118  
0.0198  
0.0098  
0.0100  
0.0122  
0.0197  
0.0098  
0.0378  
0.0215  
0.0110  
0.0105  
0.0126  
e
s
0.230  
0.920  
0.270  
1.000  
0.0090  
0.0362  
0.0106  
0.0394  
D
Notes:  
a. Use millimeters as the primary measurement.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?63300.  
www.vishay.com  
8
Document Number: 63300  
S11-1387-Rev. A, 11-Jul-11  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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