SI8472DB [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SI8472DB |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总9页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si8472DB
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET Power MOSFET
Compliant to RoHS Directive 2002/95/EC
VDS (V)
RDS(on) ()
Qg (Typ.)
I
D (A)a, e
0.044 at VGS = 4.5 V
0.050 at VGS = 2.5 V
0.056 at VGS = 1.8 V
0.070 at VGS = 1.5 V
4.5
4.2
4.0
1.5
®
•
•
20
6.8 nC
APPLICATIONS
•
Baseband Switch
•
DC/DC Conversion
- Boost Converters
•
Smart Phones, Portable Media Players
MICRO FOOT
Bump Side View
Backside View
D
S
S
G
D
2
1
4
G
3
Device Marking: 8472
xxx = Date/Lot Traceability Code
S
N-Channel MOSFET
Ordering Information: Si8472DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
8
T
T
A = 25 °C
A = 70 °C
4.5a
3.6a
3.3b
2.6b
20
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current (t = 300 µs)
IDM
IS
TC = 25 °C
TA = 25 °C
1.5a
0.65b
1.8a
1.1a
0.78b
0.5b
- 55 to 150
260
Continuous Source-Drain Diode Current
T
T
A = 25 °C
A = 70 °C
Maximum Power Dissipation
PD
W
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
VPR
°C
IR/Convection
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Ambientc, d
Symbol
Typical
55
Maximum
70
Unit
t = 10 s
t = 10 s
RthJA
°C/W
125
160
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
20
V
V
DS Temperature Coefficient
16
mV/°C
VGS(th) Temperature Coefficient
- 2.6
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.4
0.9
100
1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 70 °C
VDS - 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.5 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
10
0.036
0.041
0.046
0.050
16
0.044
0.050
0.056
0.070
V
GS = 2.5 V, ID = 1 A
GS = 1.8 V, ID = 1 A
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = 1.5 V, ID = 0.5 A
Forward Transconductancea
gfs
VDS = 10 V, ID = 1.5 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
630
105
42
12
6.8
0.8
1.1
5.3
7
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 8 V, ID = 1.5 A
pF
18
11
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = 10 V, VGS = 4.5 V, ID = 1.5 A
VGS = 0.1 V, f = 1 MHz
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
15
30
60
20
10
30
60
20
15
30
10
5
V
DD = - 10 V, RL = 6.7
ID 1.5 A, VGEN = - 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
15
30
10
V
DD = - 10 V, RL = 6.7
ID - 1.5 A, VGEN = - 8 V, Rg = 1
Turn-Off Delay Time
Fall Time
www.vishay.com
2
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TA = 25 °C
1.5
20
A
Pulse Diode Forward Current
Body Diode Voltage
IS = 1.5 A, VGS = 0
0.7
15
6
1.2
30
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
15
IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
7
ns
tb
8
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
8
20
16
12
8
VGS = 5 V thru 2 V
VGS = 1.5 V
6
TC = 25 °C
4
TC = 125 °C
2
4
VGS = 1 V
TC = - 55 °C
1.2 1.5
0
0
0.0
0.3
0.6
0.9
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
800
600
400
200
0
Ciss
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
Coss
Crss
0
4
8
12
16
20
0
4
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID = 1.5 A
7
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.5 A
VDS = 10 V
6
5
VDS = 16 V
VDS = 5 V
4
3
2
1
0
VGS = 1.5 V; ID = 0.5 A
- 50 - 25
0
25
50
75
100 125 150
0
2
4
6
8
10
12
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.10
0.08
0.06
0.04
0.02
0.00
100
10
1
ID = 1.5 A
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
25
20
0.8
0.7
0.6
0.5
0.4
0.3
0.2
15
10
ID = 250 μA
5
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)
*
10
1
100 μs
1 ms
10 ms
100 ms
10 s, 1 s
DC
0.1
0.01
TA = 25 °C
BVDSS Limited
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.5
1.2
0.9
0.6
0.3
0.0
5
4
3
2
1
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TA - Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating*
Power Derating
Note:
When Mounted on 1" x 1" FR4 with Full Copper.
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 190 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper)
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8472DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 1 mm x 1 mm: 4-BUMP (2 x 2, 0.5 mm PITCH)
4 x Ø 0.24 to 0.26 Note 4
Solder Mask ~ Ø 0.25
2
1
3
4
Bump Note 2
Recommended Land
4 x Ø b
S
D
S
8472
G
XXX
s
e
Mark on Backside of Die
D
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter 0.30 mm to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. •is location of pin 1.
Millimetersa
Inches
Nom.
Dim.
Min.
0.462
0.220
0.242
0.300
Nom.
0.505
0.250
0.255
0.310
0.500
0.250
0.960
Max.
0.548
0.280
0.268
0.320
Min.
Max.
A
A1
A2
b
0.0181
0.0086
0.0095
0.0118
0.0198
0.0098
0.0100
0.0122
0.0197
0.0098
0.0378
0.0215
0.0110
0.0105
0.0126
e
s
0.230
0.920
0.270
1.000
0.0090
0.0362
0.0106
0.0394
D
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63300.
www.vishay.com
8
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
SI8489EDB-T2-E1
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, 0.548 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明