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SI8499DB-T2-E1

更新时间：2025-07-01 10:19:20
品牌：VISHAY
描述：P-Channel 20 V (D-S) MOSFET

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SI8499DB-T2-E1 概述

P-Channel 20 V (D-S) MOSFET P沟道20 V （D -S ）的MOSFET 功率场效应晶体管

SI8499DB-T2-E1 规格参数

是否无铅： 不含铅生命周期：Active
包装说明：GRID ARRAY, R-PBGA-B6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：1.53Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：16 A最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.046 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PBGA-B6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：GRID ARRAY
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：13 W最大脉冲漏极电流 (IDM)：20 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：BALL端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI8499DB-T2-E1 数据手册

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Si8499DB  
Vishay Siliconix  
P-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)e  
Definition  
0.032 at VGS = - 4.5 V  
0.046 at VGS = - 2.5 V  
0.065 at VGS = - 2.0 V  
0.120 at VGS = - 1.8 V  
TrenchFET® Power MOSFET  
Ultra-small 1.5 mm x 1 mm Maximum Outline  
Ultra-thin 0.59 Maximum Height  
- 16  
•
•
•
•
- 14.3  
- 12  
- 20  
14.5 nC  
Compliant to RoHS Directive 2002/95/EC  
- 2.5  
APPLICATIONS  
MICRO FOOT  
•
Low On-Resistance Load Switch, Charger Switch and  
Battery Switch for Portable Devices  
- Low Power Consumption  
Bump Side View  
Backside View  
- Increased Battery Life  
S
S
D
G
S
D
2
3
4
1
6
5
S
G
Device Marking: 8499  
xxx = Date/Lot Traceability Code  
D
P-Channel MOSFET  
Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
TC = 25 °C  
- 16  
T
C = 70 °C  
A = 25 °C  
- 13.7  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 7.8a, b  
T
- 6.3a, b  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
- 20  
TC = 25 °C  
TA = 25 °C  
- 10.8  
Continuous Source-Drain Diode Current  
- 2.3a, b  
13  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
8.4  
PD  
Maximum Power Dissipation  
W
2.77a, b  
1.77a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Package Reflow Conditionsc  
°C  
IR/Convection  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.  
d. Case is defined as the top surface of the package.  
e. Based on TC = 25 °C.  
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
www.vishay.com  
1
Si8499DB  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
Maximum Junction-to-Ambienta, b  
RthJA  
37  
7
45  
°C/W  
RthJC  
Maximum Junction-to-Case (Drain)  
Steady State  
9.5  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. Maximum under Steady State conditions is 85 °C/W.  
c. Case is defined as top surface of the package.  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = - 250 µA  
ID = - 250 µA  
Drain-Source Breakdown Voltage  
- 20  
V
V
DS Temperature Coefficient  
- 20  
2.2  
mV/°C  
VGS(th) Temperature Coefficient  
VDS = VGS, ID = - 250 µA  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
- 0.5  
- 1.3  
100  
- 1  
V
IGSS  
VDS = 0 V, VGS  
=
12 V  
nA  
VDS = - 20 V, VGS = 0 V  
DS = - 20 V, VGS = 0 V, TJ = 70 °C  
VDS ≤ - 5 V, VGS = - 4.5 V  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
- 10  
ID(on)  
- 5  
VGS = - 4.5 V, ID = - 1.5 A  
0.026  
0.036  
0.048  
0.060  
10  
0.032  
0.046  
0.065  
0.120  
VGS = - 2.5 V, ID = - 1.5 A  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
V
GS = - 2.0 V, ID = - 1 A  
VGS = - 1.8 V, ID = - 0.5 A  
Forward Transconductancea  
gfs  
VDS = - 10 V, ID = - 1.5 A  
S
Dynamicb  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
1300  
250  
200  
20  
VDS = - 10 V, VGS = 0 V, f = 1 MHz  
VDS = - 10 V, VGS = - 5 V, ID = - 1.5 A  
pF  
30  
22  
Qg  
Total Gate Charge  
14.5  
2.0  
4.1  
7
nC  
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
V
DS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A  
VGS = - 0.1 V, f = 1 MHz  
Ω
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
20  
40  
50  
25  
V
DD = - 10 V, RL = 6.7 Ω  
ID ≅ - 1.5 A, VGEN = - 4.5 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
50  
100  
60  
30  
ns  
Turn-On Delay Time  
Rise Time  
7
15  
10  
20  
V
DD = - 10 V, RL = 6.7 Ω  
ID ≅ - 1.5 A, VGEN = - 10 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
55  
110  
60  
30  
www.vishay.com  
2
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
Si8499DB  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
- 10.8  
- 20  
- 1.2  
80  
A
Pulse Diode Forward Current  
Body Diode Voltage  
IS = - 1.5 A, VGS = 0 V  
- 0.8  
40  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
22  
45  
IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C  
15  
ns  
tb  
25  
Notes:  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
www.vishay.com  
3
Si8499DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
5
4
3
2
1
0
20  
V
= 5 V thru 2.5 V  
GS  
15  
10  
5
V
= 2 V  
GS  
T
= 25 °C  
C
V
= 1.5 V  
GS  
GS  
T
= 125 °C  
C
T
= - 55 °C  
1.5  
V
= 1 V  
2.5  
C
0
0.0  
0.0  
0.5  
1.0  
2.0  
0.5  
1.0  
1.5  
2.0  
3.0  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
DS  
GS  
Output Characteristics  
Transfer Characteristics  
2000  
1600  
1200  
800  
400  
0
0.20  
0.15  
0.10  
0.05  
0.00  
V
= 1.8 V  
GS  
C
iss  
V
= 2 V  
GS  
V
= 2.5 V  
GS  
C
oss  
C
rss  
V
= 4.5 V  
15  
GS  
0
4
8
12  
16  
20  
0
5
10  
- Drain Current (A)  
20  
I
D
V
- Drain-to-Source Voltage (V)  
DS  
On-Resistance vs. Drain Current and Gate Voltage  
Capacitance  
10  
8
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
I
= 1.5 A  
V
= 4.5 V; I = 1 A  
D
D
GS  
V
= 2 V; I = 1 A  
D
GS  
V
= 10 V  
DS  
6
V
= 5 V  
DS  
V
= 16 V  
DS  
4
V
= 1.8 V; I = 0.5 A  
D
GS  
2
0
0
5
10  
15  
20  
25  
30  
- 50 - 25  
0
25  
50  
75  
100 125 150  
T
- Junction Temperature (°C)  
J
Q
- Total Gate Charge (nC)  
g
On-Resistance vs. Junction Temperature  
Gate Charge  
www.vishay.com  
4
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
Si8499DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
100  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
I
= - 1.5 A  
D
T
= 150 °C  
J
10  
1
T
= 25 °C  
J
T
= 125 °C  
J
T
= 25 °C  
J
0.1  
0
1
2
3
4
5
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
SD  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
30  
25  
20  
15  
10  
5
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I
= 250 μA  
D
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse (s)  
T
- Temperature (°C)  
J
Single Pulse Power, Junction-to-Ambient  
Threshold Voltage  
100  
Limited by R  
*
DS(on)  
10  
100 μs  
1 ms  
1
10 ms  
100 ms  
1 s, 10 s  
T
= 25 °C  
0.1  
A
DC  
Single Pulse  
BVDSS Limited  
10  
0.01  
0.1  
1
100  
V
- Drain-to-Source Voltage (V)  
DS  
* V  
> minimum V at which R  
is specified  
GS  
GS  
DS(on)  
Safe Operating Area, Junction-to-Ambient  
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
www.vishay.com  
5
Si8499DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
20  
15  
12  
9
16  
Package Limited  
12  
8
4
0
6
3
0
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
T
- Case Temperature (°C)  
T
- Case Temperature (°C)  
C
C
Current Derating*  
Power Derating  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
www.vishay.com  
6
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
Si8499DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
0.1  
P
DM  
0.05  
t
1
t
2
t
1
0.02  
Single Pulse  
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 85 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
10  
100  
1000  
1
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
Single Pulse  
0.1  
-3  
-1  
-4  
-2  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
www.vishay.com  
7
Si8499DB  
Vishay Siliconix  
PACKAGE OUTLINE  
MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH)  
6 x Ø 0.24 to 0.26 Note 3  
Solder Mask ~ Ø 0.25  
C
B
A
1
2
Bump Note 2  
e
e
Recommended Land  
6 x Ø b  
D
D
S
S
S
8499  
G
XXX  
s
e
e
s
Mark on Backside of Die  
E
Notes (Unless Otherwise Specified):  
1. All dimensions are in millimeters.  
2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter ∅ 0.30 to 0.32 mm.  
3. Backside surface is coated with a Ti/Ni/Ag layer.  
4. Non-solder mask defined copper landing pad.  
5.  
·
is location of Pin 1.  
Millimetersa  
Nom.  
Inches  
Nom.  
Dim.  
Min.  
0.510  
0.220  
0.290  
0.300  
Max.  
0.590  
0.280  
0.310  
0.320  
Min.  
Max.  
A
A1  
A2  
b
0.575  
0.0201  
0.0087  
0.0114  
0.0118  
0.0224  
0.0098  
0.0118  
0.0122  
0.0197  
0.0098  
0.0378  
0.0575  
0.0232  
0.0110  
0.0122  
0.0126  
0.250  
0.300  
0.310  
e
0.500  
s
0.230  
0.920  
1.420  
0.250  
0.270  
1.000  
1.500  
0.0090  
0.0362  
0.0559  
0.0106  
0.0394  
0.0591  
D
0.960  
E
1.460  
Notes:  
a. Use millimeters as the primary measurement.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?65906.  
www.vishay.com  
8
Document Number: 65906  
S10-0543-Rev. A, 08-Mar-10  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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