概述
规格参数
数据手册SI8499DB-T2-E1 概述
P-Channel 20 V (D-S) MOSFET P沟道20 V （D -S ）的MOSFET 功率场效应晶体管
SI8499DB-T2-E1 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 包装说明： | GRID ARRAY, R-PBGA-B6 | 针数： | 6 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 1.53 | Is Samacsys： | N |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 20 V |
| 最大漏极电流 (Abs) (ID)： | 16 A | 最大漏极电流 (ID)： | 16 A |
| 最大漏源导通电阻： | 0.046 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PBGA-B6 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 6 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | GRID ARRAY |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | P-CHANNEL |
| 最大功率耗散 (Abs)： | 13 W | 最大脉冲漏极电流 (IDM)： | 20 A |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | BALL | 端子位置： | BOTTOM |
| 处于峰值回流温度下的最长时间： | 30 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI8499DB-T2-E1 数据手册
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PDF下载Si8499DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)e
Definition
0.032 at VGS = - 4.5 V
0.046 at VGS = - 2.5 V
0.065 at VGS = - 2.0 V
0.120 at VGS = - 1.8 V
TrenchFET® Power MOSFET
Ultra-small 1.5 mm x 1 mm Maximum Outline
Ultra-thin 0.59 Maximum Height
- 16
•
•
•
•
- 14.3
- 12
- 20
14.5 nC
Compliant to RoHS Directive 2002/95/EC
- 2.5
APPLICATIONS
MICRO FOOT
•
Low On-Resistance Load Switch, Charger Switch and
Battery Switch for Portable Devices
- Low Power Consumption
Bump Side View
Backside View
- Increased Battery Life
S
S
D
G
S
D
2
3
4
1
6
5
S
G
Device Marking: 8499
xxx = Date/Lot Traceability Code
D
P-Channel MOSFET
Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
TC = 25 °C
- 16
T
C = 70 °C
A = 25 °C
- 13.7
Continuous Drain Current (TJ = 150 °C)
ID
- 7.8a, b
T
- 6.3a, b
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
- 20
TC = 25 °C
TA = 25 °C
- 10.8
Continuous Source-Drain Diode Current
- 2.3a, b
13
TC = 25 °C
TC = 70 °C
TA = 25 °C
8.4
PD
Maximum Power Dissipation
W
2.77a, b
1.77a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
°C
IR/Convection
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Case is defined as the top surface of the package.
e. Based on TC = 25 °C.
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
1
Si8499DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
RthJA
37
7
45
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
9.5
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 85 °C/W.
c. Case is defined as top surface of the package.
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 20
2.2
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS, ID = - 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
- 0.5
- 1.3
100
- 1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 70 °C
VDS ≤ - 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
- 5
VGS = - 4.5 V, ID = - 1.5 A
0.026
0.036
0.048
0.060
10
0.032
0.046
0.065
0.120
VGS = - 2.5 V, ID = - 1.5 A
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 2.0 V, ID = - 1 A
VGS = - 1.8 V, ID = - 0.5 A
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 1.5 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1300
250
200
20
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 5 V, ID = - 1.5 A
pF
30
22
Qg
Total Gate Charge
14.5
2.0
4.1
7
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A
VGS = - 0.1 V, f = 1 MHz
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
20
40
50
25
V
DD = - 10 V, RL = 6.7 Ω
ID ≅ - 1.5 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
50
100
60
30
ns
Turn-On Delay Time
Rise Time
7
15
10
20
V
DD = - 10 V, RL = 6.7 Ω
ID ≅ - 1.5 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
55
110
60
30
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Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
Si8499DB
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
- 10.8
- 20
- 1.2
80
A
Pulse Diode Forward Current
Body Diode Voltage
IS = - 1.5 A, VGS = 0 V
- 0.8
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
22
45
IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
15
ns
tb
25
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
3
Si8499DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
4
3
2
1
0
20
V
= 5 V thru 2.5 V
GS
15
10
5
V
= 2 V
GS
T
= 25 °C
C
V
= 1.5 V
GS
GS
T
= 125 °C
C
T
= - 55 °C
1.5
V
= 1 V
2.5
C
0
0.0
0.0
0.5
1.0
2.0
0.5
1.0
1.5
2.0
3.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
2000
1600
1200
800
400
0
0.20
0.15
0.10
0.05
0.00
V
= 1.8 V
GS
C
iss
V
= 2 V
GS
V
= 2.5 V
GS
C
oss
C
rss
V
= 4.5 V
15
GS
0
4
8
12
16
20
0
5
10
- Drain Current (A)
20
I
D
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
= 1.5 A
V
= 4.5 V; I = 1 A
D
D
GS
V
= 2 V; I = 1 A
D
GS
V
= 10 V
DS
6
V
= 5 V
DS
V
= 16 V
DS
4
V
= 1.8 V; I = 0.5 A
D
GS
2
0
0
5
10
15
20
25
30
- 50 - 25
0
25
50
75
100 125 150
T
- Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
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Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
Si8499DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.12
0.10
0.08
0.06
0.04
0.02
0.00
I
= - 1.5 A
D
T
= 150 °C
J
10
1
T
= 25 °C
J
T
= 125 °C
J
T
= 25 °C
J
0.1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I
= 250 μA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Pulse (s)
T
- Temperature (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
T
= 25 °C
0.1
A
DC
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
- Drain-to-Source Voltage (V)
DS
* V
> minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
5
Si8499DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
15
12
9
16
Package Limited
12
8
4
0
6
3
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
Si8499DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
0.02
Single Pulse
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-3
-1
-4
-2
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
7
Si8499DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH)
6 x Ø 0.24 to 0.26 Note 3
Solder Mask ~ Ø 0.25
C
B
A
1
2
Bump Note 2
e
e
Recommended Land
6 x Ø b
D
D
S
S
S
8499
G
XXX
s
e
e
s
Mark on Backside of Die
E
Notes (Unless Otherwise Specified):
1. All dimensions are in millimeters.
2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter ∅ 0.30 to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5.
·
is location of Pin 1.
Millimetersa
Nom.
Inches
Nom.
Dim.
Min.
0.510
0.220
0.290
0.300
Max.
0.590
0.280
0.310
0.320
Min.
Max.
A
A1
A2
b
0.575
0.0201
0.0087
0.0114
0.0118
0.0224
0.0098
0.0118
0.0122
0.0197
0.0098
0.0378
0.0575
0.0232
0.0110
0.0122
0.0126
0.250
0.300
0.310
e
0.500
s
0.230
0.920
1.420
0.250
0.270
1.000
1.500
0.0090
0.0362
0.0559
0.0106
0.0394
0.0591
D
0.960
E
1.460
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65906.
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Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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