SI8802DB [VISHAY]

N-Channel 8 V (D-S) MOSFET; N沟道8 V (D -S )的MOSFET
SI8802DB
型号: SI8802DB
厂家: VISHAY    VISHAY
描述:

N-Channel 8 V (D-S) MOSFET
N沟道8 V (D -S )的MOSFET

文件: 总8页 (文件大小:139K)
中文:  中文翻译
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New Product  
Si8802DB  
Vishay Siliconix  
N-Channel 8 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)a  
3.5  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
Small 0.8 mm x 0.8 mm Outline Area  
Low 0.4 mm max. profile  
0.054 at VGS = 4.5 V  
0.060 at VGS = 2.5 V  
0.068 at VGS = 1.8 V  
0.086 at VGS = 1.5 V  
0.135 at VGS = 1.2 V  
3.3  
8
4.3 nC  
3.1  
• Low On-Resistance  
2.3  
Compliant to RoHS Directive 2002/95/EC  
1.0  
APPLICATIONS  
Load Switch with Low Voltage Drop  
Load Switch for 1.2 V, 1.5 V, 1.8 V Power Lines  
Smart Phones, Tablet PCs, Portable Media Players  
MICRO FOOT  
Bump Side View  
Backside View  
S
S
G
D
D
2
1
4
3
G
Device Marking: 802  
xxx = Date/Lot Traceability Code  
N-Channel MOSFET  
Ordering Information: Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
8
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
5
VGS  
T
A = 25 °C  
3.5a  
2.8a  
3.0b  
2.4b  
15  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
TA = 25 °C  
TA = 25 °C  
0.7a  
0.4b  
0.9a  
0.6a  
0.5b  
0.3b  
- 55 to 150  
260  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipation  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
105  
Maximum  
135  
Unit  
Maximum Junction-to-Ambienta, d  
t 5 s  
°C/W  
Maximum Junction-to-Ambientb, e  
200  
260  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.  
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.  
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.  
d. Maximum under steady state conditions is 185 °C/W.  
e. Maximum under steady state conditions is 330 °C/W.  
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
New Product  
Si8802DB  
Vishay Siliconix  
SPECIFICATIONS (T = 25 °C, unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
VDS/TJ  
VGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = 250 µA  
ID = 250 µA  
Drain-Source Breakdown Voltage  
8
V
V
DS Temperature Coefficient  
7
mV/°C  
VGS(th) Temperature Coefficient  
- 2.1  
VDS = VGS, ID = 250 µA  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
0.35  
10  
0.7  
100  
1
V
VDS = 0 V, VGS  
=
5 V  
IGSS  
nA  
VDS = 8 V, VGS = 0 V  
DS = 8 V, VGS = 0 V, TJ = 55 °C  
VDS 5 V, VGS = 4.5 V  
VGS 4.5 V, ID = 1 A  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
10  
ID(on)  
0.044  
0.049  
0.055  
0.060  
0.080  
13  
0.054  
0.060  
0.068  
0.086  
0.135  
VGS 2.5 V, ID = 1 A  
Drain-Source On-State Resistancea  
Forward Transconductancea  
RDS(on)  
VGS 1.8 V, ID = 0.5 A  
VGS 1.5 V, ID = 0.2 A  
VGS 1.2 V, ID = 0.1 A  
VDS = 4 V, ID = 1 A  
gfs  
S
Dynamicb  
Qg  
Qgs  
Qgd  
Rg  
Total Gate Charge  
4.3  
0.44  
0.72  
3.5  
5
6.5  
VDS = 4 V, VGS = 4.5 V, ID = 1 A  
f = 1 MHz  
Gate-Source Charge  
nC  
Gate-Drain Charge  
Gate Resistance  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
10  
30  
40  
15  
Rise Time  
15  
V
DD = 4 V, RL = 4   
ns  
ID 1 A, VGEN = 4.5 V, Rg = 1   
Turn-Off Delay Time  
22  
Fall Time  
7
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
Pulse Diode Forward Current  
Body Diode Voltage  
IS  
ISM  
VSD  
trr  
TA = 25 °C  
0.7  
15  
A
IS = 1 A, VGS = 0 V  
0.7  
20  
5
1.2  
40  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
10  
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C  
14  
60  
ns  
tb  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
New Product  
Si8802DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
15  
10  
8
VGS = 5 V thru 2 V  
12  
VGS = 1.5 V  
9
6
6
4
TC = 25 °C  
TC = 125 °C  
3
2
VGS = 1 V  
TC = - 55 °C  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
15  
5
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
VGS - Gate-to-Source Voltage (V)  
VDS - Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
600  
500  
400  
300  
200  
100  
0
0.16  
0.12  
0.08  
0.04  
0
VGS = 1.2 V  
Ciss  
VGS = 1.5 V  
VGS = 1.8 V  
Coss  
VGS = 4.5 V  
VGS = 2.5 V  
Crss  
0
2
4
6
8
3
6
9
12  
ID - Drain Current (A)  
VDS - Drain-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
5
4
3
2
1
0
1.4  
1.2  
1.0  
0.8  
0.6  
ID = 1 A  
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1 A  
VGS = 1.5 V, ID = 0.2 A  
VDS = 4 V  
VDS = 2 V  
VGS = 1.2 V, ID = 0.1 A  
VDS = 6.4 V  
1
2
3
4
- 50 - 25  
0
25  
50  
75  
100 125 150  
Qg - Total Gate Charge (nC)  
TJ - Junction Temperature (°C)  
Gate Charge  
On-Resistance vs. Junction Temperature  
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
New Product  
Si8802DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
100  
0.15  
0.12  
0.09  
0.06  
0.03  
0
ID = 1 A  
10  
TJ = 150 °C  
TJ = 125 °C  
1
TJ = 25 °C  
TJ = 25 °C  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)  
VGS - Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
14  
12  
10  
8
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
ID = 250 μA  
6
4
2
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
100  
1000  
TJ - Temperature (°C)  
Time (s)  
Threshold Voltage  
Single Pulse Power (Junction-to-Ambient)  
100  
Limited by RDS(on)  
*
10  
1
100 μs  
1 ms  
10 ms  
10 s, 1s, 100 ms  
DC  
0.1  
0.01  
TA = 25 °C  
BVDSS Limited  
0.1  
1
10  
100  
VDS - Drain-to-Source Voltage (V)  
* VGS > minimum VGS at which RDS(on) is specified  
Safe Operating Area, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
New Product  
Si8802DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
0.8  
0.6  
0.4  
0.2  
0.0  
3.5  
3
2.5  
2
1.5  
1
0.5  
0
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
TA - Ambient Temperature (°C)  
T
- Ambient Temperature (°C)  
A
Current Derating*  
Power Derating  
Note:  
When mounted on 1" x 1" FR4 with full copper.  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
New Product  
Si8802DB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
0.05  
P
DM  
t
1
0.02  
t
2
t
1
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 185 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
Single Pulse  
0.01  
4. Surface Mounted  
0.0001  
0.001  
0.01  
0.1  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
P
DM  
0.05  
0.02  
t
1
t
2
t
1
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 330 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
Single Pulse  
0.001  
4. Surface Mounted  
0.01  
0.0001  
0.01  
0.1  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper)  
www.vishay.com  
6
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
New Product  
Si8802DB  
Vishay Siliconix  
PACKAGE OUTLINE  
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)  
4 x Ø b  
S
S
802  
G
D
XXX  
s
e
Mark on Backside of die  
D
4 x Ø 0.205 to 0.225 Note 4  
Solder Mask ~ Ø 0.215  
2
3
4
1
e
Recommended Land  
Notes (Unless otherwise specified):  
1. All dimensions are in millimeters.  
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.  
3. Backside surface is coated with a Ti/Ni/Ag layer.  
4. Non-solder mask defined copper landing pad.  
5.  
·is location of pin 1.  
Millimetersa  
Nom.  
Inches  
Nom.  
Dim.  
Min.  
0.314  
0.127  
Max.  
0.400  
0.187  
Min.  
Max.  
A
0.357  
0.0124  
0.0050  
0.0141  
0.0062  
0.0157  
0.0074  
A1  
0.157  
A2  
0.187  
0.165  
0.200  
0.175  
0.400  
0.200  
0.800  
0.213  
0.185  
0.0074  
0.0064  
0.0079  
0.0068  
0.0157  
0.0078  
0.0314  
0.0084  
0.0072  
b
e
s
0.180  
0.760  
0.220  
0.840  
0.0070  
0.0299  
0.0086  
0.0330  
D
Notes:  
a. Use millimeters as the primary measurement.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?67999.  
Document Number: 67999  
S11-1386-Rev. A, 11-Jul-11  
www.vishay.com  
7
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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