SI8802DB [VISHAY]
N-Channel 8 V (D-S) MOSFET; N沟道8 V （D -S ）的MOSFET
| 型号： | SI8802DB |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 8 V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si8802DB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
ID (A)a
3.5
Qg (Typ.)
Definition
•
•
•
TrenchFET® Power MOSFET
Small 0.8 mm x 0.8 mm Outline Area
Low 0.4 mm max. profile
0.054 at VGS = 4.5 V
0.060 at VGS = 2.5 V
0.068 at VGS = 1.8 V
0.086 at VGS = 1.5 V
0.135 at VGS = 1.2 V
3.3
8
4.3 nC
3.1
• Low On-Resistance
2.3
• Compliant to RoHS Directive 2002/95/EC
1.0
APPLICATIONS
•
•
•
Load Switch with Low Voltage Drop
Load Switch for 1.2 V, 1.5 V, 1.8 V Power Lines
Smart Phones, Tablet PCs, Portable Media Players
MICRO FOOT
Bump Side View
Backside View
S
S
G
D
D
2
1
4
3
G
Device Marking: 802
xxx = Date/Lot Traceability Code
N-Channel MOSFET
Ordering Information: Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
8
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
5
VGS
T
A = 25 °C
3.5a
2.8a
3.0b
2.4b
15
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
TA = 25 °C
TA = 25 °C
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
Continuous Source-Drain Diode Current
T
A = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
105
Maximum
135
Unit
Maximum Junction-to-Ambienta, d
t 5 s
°C/W
Maximum Junction-to-Ambientb, e
200
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
8
V
V
DS Temperature Coefficient
7
mV/°C
VGS(th) Temperature Coefficient
- 2.1
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.35
10
0.7
100
1
V
VDS = 0 V, VGS
=
5 V
IGSS
nA
VDS = 8 V, VGS = 0 V
DS = 8 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VGS 4.5 V, ID = 1 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
0.044
0.049
0.055
0.060
0.080
13
0.054
0.060
0.068
0.086
0.135
VGS 2.5 V, ID = 1 A
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
VGS 1.8 V, ID = 0.5 A
VGS 1.5 V, ID = 0.2 A
VGS 1.2 V, ID = 0.1 A
VDS = 4 V, ID = 1 A
gfs
S
Dynamicb
Qg
Qgs
Qgd
Rg
Total Gate Charge
4.3
0.44
0.72
3.5
5
6.5
VDS = 4 V, VGS = 4.5 V, ID = 1 A
f = 1 MHz
Gate-Source Charge
nC
Gate-Drain Charge
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
10
30
40
15
Rise Time
15
V
DD = 4 V, RL = 4
ns
ID 1 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
22
Fall Time
7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TA = 25 °C
0.7
15
A
IS = 1 A, VGS = 0 V
0.7
20
5
1.2
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C
14
60
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
10
8
VGS = 5 V thru 2 V
12
VGS = 1.5 V
9
6
6
4
TC = 25 °C
TC = 125 °C
3
2
VGS = 1 V
TC = - 55 °C
0
0
0
0
0
0.5
1
1.5
2
2.5
3
15
5
0.0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
500
400
300
200
100
0
0.16
0.12
0.08
0.04
0
VGS = 1.2 V
Ciss
VGS = 1.5 V
VGS = 1.8 V
Coss
VGS = 4.5 V
VGS = 2.5 V
Crss
0
2
4
6
8
3
6
9
12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.4
1.2
1.0
0.8
0.6
ID = 1 A
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1 A
VGS = 1.5 V, ID = 0.2 A
VDS = 4 V
VDS = 2 V
VGS = 1.2 V, ID = 0.1 A
VDS = 6.4 V
1
2
3
4
- 50 - 25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
0.12
0.09
0.06
0.03
0
ID = 1 A
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
14
12
10
8
0.8
0.7
0.6
0.5
0.4
0.3
ID = 250 μA
6
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)
*
10
1
100 μs
1 ms
10 ms
10 s, 1s, 100 ms
DC
0.1
0.01
TA = 25 °C
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
0.6
0.4
0.2
0.0
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TA - Ambient Temperature (°C)
T
- Ambient Temperature (°C)
A
Current Derating*
Power Derating
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 185 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
0.0001
0.001
0.01
0.1
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 330 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
0.001
4. Surface Mounted
0.01
0.0001
0.01
0.1
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper)
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Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
4 x Ø b
S
S
802
G
D
XXX
s
e
Mark on Backside of die
D
4 x Ø 0.205 to 0.225 Note 4
Solder Mask ~ Ø 0.215
2
3
4
1
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5.
·is location of pin 1.
Millimetersa
Nom.
Inches
Nom.
Dim.
Min.
0.314
0.127
Max.
0.400
0.187
Min.
Max.
A
0.357
0.0124
0.0050
0.0141
0.0062
0.0157
0.0074
A1
0.157
A2
0.187
0.165
0.200
0.175
0.400
0.200
0.800
0.213
0.185
0.0074
0.0064
0.0079
0.0068
0.0157
0.0078
0.0314
0.0084
0.0072
b
e
s
0.180
0.760
0.220
0.840
0.0070
0.0299
0.0086
0.0330
D
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67999.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Document Number: 91000
Revision: 11-Mar-11
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