SI91860 [VISHAY]
400-mA Smart Regulator for Network Interface Card; 400毫安智能调节器的网络接口卡
| 型号： | SI91860 |
| 厂家： | 
VISHAY |
| 描述： | 400-mA Smart Regulator for Network Interface Card |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si9420DY
Siliconix
N-Channel Enhancement-Mode MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
(W)
I (A)
D
DS(ON)
200
1.0 @ V = 10 V
"1.0
GS
D
D D D
SO-8
N/C
S
D
D
D
D
1
2
3
4
8
7
6
5
G
S
G
Top View
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
200
"20
"1.0
"0.8
"10
5
DS
V
GS
T
= 25_C
= 70_C
A
A
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
Avalanche Current
I
AS
Single Avalanche Energy
E
1.3
mJ
A
AS
A
Continuous Source Current (Diode Conduction)
I
1.0
S
T
= 25_C
= 70_C
2.5
A
A
Maximum Power Dissipation
P
D
W
T
A
1.6
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
A
Maximum Junction-to-Ambient
R
thJA
50
_C/W
Notes
A. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70123.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors
1
Si9420DY
Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
A
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
STATIC
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2
2
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
2
nA
GSS
V
= 160 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 160 V, V = 0 V, T = 55_C
25
GS
J
B
On-State Drain Current
I
V
w 10 V, V = 10 V
5.0
A
W
S
V
D(on)
DS
GS
B
Drain-Source On-State Resistance
r
V
= 10 V, I = 1.0 A
0.8
1.5
0.7
1.0
1.2
DS(on)
GS
DS
D
B
Forward Transconductance
g
fs
V
I
= 15 V, I = 1.0 A
D
B
Diode Forward Voltage
V
= 1.0 A, V = 0 V
S GS
SD
A
DYNAMIC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
8.6
1.5
3.2
7
16
g
Q
gs
Q
gd
V
= 100 V, V = 10 V, I = 1.0 A
nC
ns
DS
GS
D
t
14
24
50
30
d(on)
t
r
12
26
15
V
DD
= 100 V, R = 100 W
L
I
^ 1.0 A, V
= 10 V, R = 6 W
GEN G
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.0 A, di/dt = 100 A/ms
130
Notes
A. Guaranteed by design, not subject to production testing.
B. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors
2
Si9420DY
Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
8
6
4
2
0
10
8
V
GS
= 10, 9 V
T
= –55_C
C
8 V
7 V
6 V
25_C
6
125_C
4
5 V
4 V
2
0
0
4
8
12
16
20
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
OnĆResistance vs. Drain Current
Capacitance
1.40
1.20
600
500
400
300
200
V
GS
= 10 V
1.00
0.80
C
C
iss
0.60
0.40
100
0
oss
C
rss
0
2
4
6
0
5
10
15
20
25
30
35
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
OnĆResistance vs. Junction Temperature
2.5
20
V
= 100 V
= 1 A
V
= 10 V
DS
GS
I
D
I = 1 A
D
2.0
1.5
1.0
0.5
0
16
12
8
4
0
–50 –25
0
25
50
75
100 125 150
0
4
8
12
16
T – Junction Temperature (_C)
J
Q
g
– Total Gate Charge (nC)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors
3
Si9420DY
Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
SourceĆDrain Diode Forward Voltage
OnĆResistance vs. GateĆtoĆSource Voltage
2.0
20
10
1.5
1.0
0.5
0
T = 150_C
J
I
D
= 1 A
T = 25_C
J
1
5
6
7
8
9
10
100
30
0
0.5
1.0
1.5
2
V
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Threshold Voltage
SinglePulsePower
1.00
0.50
25
20
15
I
D
= 250 mA
0.00
10
–0.50
5
0
–1.00
–50
0
50
T – Temperature (_C)
100
150
0.01
0.1
1
10
Time (sec)
J
Normalized Thermal Transient Impedance, JunctionĆtoĆAmbient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 50_C/W
0.02
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors
4
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