SI9435BDY [VISHAY]

P-Channel 30-V (D-S) MOSFET; P通道30 -V (D -S )的MOSFET
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MAX34334CSE前5页PDF页面详情预览
Si9435BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.042 at V
GS
= - 10 V
0.055 at V
GS
= - 6 V
0.070 at V
GS
= - 4.5 V
I
D
(A)
- 5.7
- 5.0
- 4.4
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
G
D
D
S
D
Ordering Information:
Si9435BDY-T1-E3
(Lead (Pb)-free)
Si9435BDY-T1-GE3
(Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 2.3
2.5
1.6
- 55 to 150
- 5.7
- 4.6
- 30
- 1.1
1.3
0.8
W
°C
10 s
- 30
± 20
- 4.1
- 3.2
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
40
70
24
Maximum
50
95
30
°C/W
Unit
Document Number: 72245
S09-0870-Rev. D, 18-May-09
www.vishay.com
1
Si9435BDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
- 10 V, V
GS
= - 10 V
V
DS
- 5 V, V
GS
= - 4.5 V
V
GS
= - 10 V, I
D
= - 5.7 A
Drain-Source On-State Resistance
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.2 A, dI/dt = 100 A/µs
V
DD
= - 15 V, R
L
= 15
Ω
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 3.5 A
16
2.3
4.5
8.8
14
14
42
30
30
25
25
70
50
60
ns
Ω
24
nC
b
Symbol
Test Conditions
Min.
- 1.0
Typ.
a
Max.
- 3.0
± 100
-1
-5
Unit
V
nA
µA
A
- 20
-5
0.033
0.043
0.056
13
- 0.8
- 1.1
0.042
0.055
0.070
R
DS(on)
g
fs
V
SD
V
GS
= - 6 V, I
D
= - 5 A
V
GS
= - 4.5 V, I
D
= - 4.4 A
V
DS
= - 15 V, I
D
= - 5.7 A
I
S
= - 2.3 A, V
GS
= 0 V
Ω
S
V
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72245
S09-0870-Rev. D, 18-May-09
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 V thru 6 V
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5V
30
25
20
20
15
4V
10
15
10
T
C
= 125
°C
5
3V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
5
25
°C
- 55
°C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.15
1100
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
880
C
iss
660
0.09
V
GS
= 4.5 V
0.06
V
GS
= 6 V
0.03
V
GS
= 10 V
0.00
0
4
8
12
16
20
440
C
oss
220
C
rss
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 15 V
I
D
= 3.5 A
R
DS(on)
- On-Resistance
(Normalized)
8
1.6
V
GS
= 10 V
I
D
= 5.7 A
1.4
Capacitance
V
GS
- Gate-to-Source Voltage (V)
6
1.2
4
1.0
2
0.8
0
0.0
3.2
6.4
9.6
12.8
16.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 72245
S09-0870-Rev. D, 18-May-09
On-Resistance vs. Junction Temperature
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Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
0.20
0.16
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
I
D
= 5.7 A
0.12
10
T
J
= 150
°C
T
J
= 25
°C
0.08
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
150
On-Resistance vs. Gate-to-Source Voltage
0.4
V
GS(th)
Variance (V)
I
D
= 250
µA
Power (W)
0.2
120
90
0.0
60
- 0.2
30
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10-
3
10-
2
10
-1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Foot
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Document Number: 72245
S09-0870-Rev. D, 18-May-09
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70
°C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72245.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
www.vishay.com
5