SI9435BDY [VISHAY]

P-Channel 30-V (D-S) MOSFET; P通道30 -V (D -S )的MOSFET
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MAX34334CSE前5页PDF页面详情预览
Si9435BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.042 @ V
GS
=
−10
V
−30
0.055 @ V
GS
=
−6
V
0.070 @ V
GS
=
−4.5
V
FEATURES
I
D
(A)
−5.7
−5.0
−4.4
D
TrenchFETr Power MOSFET
S
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si9435BDY
Si9435BDY-T1 (with Tape and Reel)
Si9435BDY—E3 (Lead (Pb)-Free)
Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
8
7
6
5
D
D
D
D
D
P-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−30
"20
Unit
V
−5.7
−4.6
−30
−2.3
2.5
1.6
−55
to 150
−4.1
−3.2
A
−1.1
1.3
0.8
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
40
70
24
Maximum
50
95
30
Unit
_C/W
C/W
Document Number: 72245
S-50153—Rev. C, 31-Jan-05
www.vishay.com
1
Si9435BDY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
I
D( )
D(on)
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−30
V, V
GS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
−10
V, V
GS
=
−10
V
V
DS
v
−5
V, V
GS
=
−4.5
V
V
GS
=
−10
V, I
D
=
−5.7
A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
=
−6
V, I
D
=
−5
A
V
GS
=
−4.5
V, I
D
=
−4.4
A
Forward Transconductance
b
Diode Forward Voltage
b
g
fs
V
SD
V
DS
=
−15
V, I
D
=
−5.7
A
I
S
=
−2.3
A, V
GS
= 0 V
−20
−5
0.033
0.043
0.056
13
−0.8
−1.1
0.042
0.055
0.070
S
V
W
−1.0
−3.0
"100
−1
−5
V
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State
On State Drain Current
b
A
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.2
A, di/dt = 100 A/ms
V
DD
=
−15
V, R
L
= 15
W
15
I
D
^
−1
A, V
GEN
=
−10
V, R
g
= 6
W
V
DS
=
−15
V, V
GS
=
−10
V, I
D
=
−3.5
A
16
2.3
4.5
8.8
14
14
42
30
30
25
25
70
50
60
ns
W
24
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 72245
S-50153—Rev. C, 31-Jan-05
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 6 V
25
I
D
Drain Current (A)
I
D
Drain Current (A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
Drain-to-Source Voltage (V)
4V
30
5V
25
20
15
10
T
C
= 125_C
5
3V
0
0
1
2
3
4
5
V
GS
Gate-to-Source Voltage (V)
25_C
Transfer Characteristics
−55_C
On-Resistance vs. Drain Current
0.15
r
DS(on)
On-Resistance (
W
)
1100
Capacitance
C
Capacitance (pF)
0.12
880
C
iss
660
0.09
V
GS
= 4.5 V
0.06
V
GS
= 6 V
440
C
oss
C
rss
0
0.03
V
GS
= 10 V
220
0.00
0
4
8
12
16
20
0
5
10
15
20
25
30
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 3.5 A
r
DS(on)
On-Resiistance
(Normalized)
1.4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 5.7 A
8
6
1.2
4
1.0
2
0.8
0
0.0
3.2
6.4
9.6
12.8
16.0
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
Total Gate Charge (nC)
Document Number: 72245
S-50153—Rev. C, 31-Jan-05
T
J
Junction Temperature (_C)
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Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.20
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
On-Resistance (
W
)
0.16
I
S
Source Current (A)
0.12
I
D
= 5.7 A
0.08
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Threshold Voltage
0.6
150
Single Pulse Power, Junction-to-Ambient
0.4
V
GS(th)
Variance (V)
120
I
D
= 250
mA
Power (W)
90
0.2
0.0
60
−0.2
30
−0.4
−50
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
Time (sec)
1
10
T
J
Temperature (_C)
100
Safe Operating Area, Junction-to-Foot
*Limited by r
DS(on)
10
I
D
Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
dc
0.1
T
C
= 25_C
Single Pulse
0.01
0.1
1
10
100
V
DS
Drain-to-Source Voltage (V)
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
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Document Number: 72245
S-50153—Rev. C, 31-Jan-05
4
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72245.
Document Number: 72245
S-50153—Rev. C, 31-Jan-05
www.vishay.com
5