SI9945AEY [VISHAY]
Dual N-Channel 60-V (D-S), 175C MOSFET; 双N通道60 -V （D -S ） ， 175 2 C MOSFET
| 型号： | SI9945AEY |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 60-V (D-S), 175C MOSFET |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si9945AEY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.080 @ V = 10 V
"3.7
"3.4
GS
60
0.100 @ V = 4.5 V
GS
D
1
D
1
D
2
D
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
1
G
2
G
Top View
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
60
"20
"3.7
"3.2
25
DS
GS
V
V
T
= 25_C
= 70_C
A
a
Continuous Drain Current (T = 175_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
2
T
= 25_C
= 70_C
2.4
A
a
Maximum Power Dissipation
P
D
W
T
A
1.7
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
t v 10 sec
62.5
Junction-to-Ambienta
R
thJA
_C/W
Steady State
93
Notes
a. Surface Mounted on 1” x 1” FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-1
Si9945AEY
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 60 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
DS(on)
V
= 60 V, V = 0 V, T = 55_C
V
10
DS
GS
J
a
On-State Drain Current
I
w 5 V, V = 10 V
20
DS
GS
V
= 10 V, I = 3.7 A
0.06
0.075
11
0.080
0.100
GS
GS
DS
D
a
Drain-Source On-State Resistance
r
W
V
V
I
= 4.5 V, I = 3.4 A
D
a
Forward Transconductance
g
fs
= 15 V, I = 3.7 A
S
V
D
a
Diode Forward Voltage
V
= 2.0 A, V = 0 V
1.2
20
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
11
2
Q
gs
Q
gd
V
DS
= 30 V, V = 10 V, I = 3.7 A
nC
ns
GS
D
2
t
9
20
20
40
20
80
d(on)
t
r
10
21
8
V
= 30 V, R = 30 W
L
= 10 V, R = 6 W
GEN G
DD
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 2.0 A, di/dt = 100 A/ms
45
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-2
Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
25
20
15
10
5
25
20
15
10
5
V
GS
= 10 through 5 V
4 V
T
C
= –55_C
25_C
150_C
3 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.20
0.16
0.12
0.08
0.04
0
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.4
2.0
1.6
1.2
0.8
0.4
0
V
= 30 V
= 3.7 A
V
GS
= 10 V
DS
I
D
I = 3.7 A
D
6
4
2
0
0
2
4
6
8
10
–50 –25
0
25
50
75 100 125 150 175
T – Junction Temperature (_C)
J
Q
g
– Total Gate Charge (nC)
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3
Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
0.20
0.16
0.12
0.08
0.04
0
10
T = 175_C
J
T = 25_C
J
I
D
= 3.7 A
1
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
0.3
120
90
I
D
= 250 mA
0.0
60
30
0
–0.3
–0.6
–0.9
0.001
0.01
0.1
1
10
100
1000
–50 –25
0
25
50
75 100 125 150 175
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 93_C/W
3. T – T = P
DM thJA
thJA
(t)
Z
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
+2
+3
10
10
10
10
1
10
10
10
Square Wave Pulse Duration (sec)
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-4
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