SI9958DY-T1 [VISHAY]
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI9958DY-T1 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si9958DY
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.10 @ V = 10 V
GS
"3.5
"3
0.12 @ V = 6 V
GS
N-Channel
P-Channel
20
0.15 @ V = 4.5 V
"2.5
"3.5
"3
GS
0.10 @ V = –10 V
GS
0.12 @ V = –6V
GS
–20
0.19 @ V = –4.5 V
"2.5
GS
D
1
D
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
2
G
1
G
Top View
S
1
D
2
D
2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
–20
"20
"3.5
"2.8
"14
–1.7
DS
GS
V
V
"20
"3.5
"2.8
"14
1.7
T
= 25_C
= 70_C
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 70_C
2.0
1.3
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P-Channel
Unit
a
Maximum Junction-to-Ambient
R
thJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com S FaxBack 408-970-5600
1
Si9958DY
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max Unit
Static
V
= V , I = 250 mA
N-Ch
P-Ch
1.0
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
DS
= V , I = –250 mA
–1.0
GS
D
I
V
DS
= 0 V, V = "20 V
"100
nA
GSS
GS
V
= 16 V, V = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1
–1
5
DS
GS
V
DS
= –16 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
V
= 10 V, V = 0 V, T = 70_C
DS
GS
J
= –10 V, V = 0 V, T = 70_C
–5
DS
GS
J
V
DS
w 5 V, V = 10 V
14
–14
3.5
GS
V
v –5 V, V = –10 V
GS
DS
b
On-State Drain Current
I
A
D(on)
V
DS
w 5 V, V = 4.5 V
GS
V
v –5 V, V = –4.5 V
–2.5
DS
GS
V
= 10 V, I = 3.5 A
0.10
0.10
GS
D
V
= –10 V, I = 3.5 A
D
GS
V
= 6 V, I = 3 A
N-Ch
P-Ch
0.12
GS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= – 6 V, I = 3 A
D
0.12
0.15
0.19
GS
V
= 4.5 V, I = 2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
GS
D
V
= –4.5 V, I = 2 A
D
GS
DS
V
= 15 V, I = 3.5 A
5.6
4.0
D
b
Forward Transconductance
g
S
V
fs
V
DS
= –15 V, I = –3.5 A
D
I
S
= 1.7 A, V = 0 V
0.9
1.2
GS
b
Diode Forward Voltage
V
SD
I
S
= –1.7 A, V = 0 V
GS
–0.9
–1.2
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
30
30
Total Gate Charge
Q
g
13
1.0
2.0
3.1
5.4
5
N-Channel
V
= 10 V, V = 10 V, I = 3.5 A
DS
GS D
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
nC
P-Channel
V
= –10 V, V = –10 V, I = –3.5 A
DS
GS D
10
40
t
d(on)
21
12
12
17
12
9
N-Channel
25
V
= 10 V, R = 10 W
DD
L
t
r
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
25
30
P-Channel
= –10 V, R = 10 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
30
I
D
^ –1 A, V
= –10 V, R = 6 W
GEN G
20
t
f
11
60
50
20
100
100
Source-Drain Reverse Recovery Time
Notes
t
rr
I = 3.5 A, di/dt = 100 A/ms
F
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com S FaxBack 408-970-5600
2
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
NĆCHANNEL
Output Characteristics
Transfer Characteristics
20
20
15
10
5
V
GS
= 10, 9, 8, 7, 6 V
16
12
8
5 V
T
= 125_C
C
4 V
4
25_C
–55_C
3 V
8
0
0
0
1
2
3
4
5
6
0
2
4
6
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.20
0.16
0.12
0.08
0.04
0
1600
1200
800
400
0
V
= 4.5 V
GS
C
oss
V
= 6 V
GS
C
iss
V
GS
= 10 V
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 3.5 A
V
GS
= 10 V
DS
I
D
I = 3.5 A
D
6
4
2
0
0
2
4
6
8
10
–50
0
50
100
150
T – Junction Temperature (_C)
J
Q
g
– Total Gate Charge (nC)
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com S FaxBack 408-970-5600
3
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.16
20
T = 150_C
J
10
0.12
0.08
0.04
0
T = 25_C
J
I
D
= 3.5 A
1
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
1.0
0.5
25
I
D
= 250 µA
20
15
10
5
0.0
–0.5
–1
–50
0
0
50
100
150
0.01
0.1
1
10
100
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 62.5_C/W
thJA
0.02
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com S FaxBack 408-970-5600
4
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
PĆCHANNEL
Output Characteristics
Transfer Characteristics
10
10
V
GS
= 10, 9, 8, 7, 6, 5 V
4 V
8
8
6
4
2
0
6
4
T
C
= 125_C
3 V
2
25_C
2 V
8
–55_C
0
0
2
4
6
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.32
0.24
0.16
0.08
0
2000
1500
1000
500
0
V
GS
= 4.5 V
V
GS
= 6 V
C
iss
C
oss
V
GS
= 10 V
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 3.5 A
V
GS
= 10 V
DS
I
D
I = 3.5 A
D
6
4
2
0
0
2
4
g
6
8
10
12
14
–50
0
50
100
150
T – Junction Temperature (_C)
J
Q
– Total Gate Charge (nC)
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com S FaxBack 408-970-5600
5
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
T = 150_C
J
T = 25_C
J
I
D
= 3.5 A
1
0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
25
1.0
I
D
= 250 µA
20
15
10
5
0.5
0.0
–0.5
–1
0
–50
0
50
100
150
–2
–1
10
10
1
10
30
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
2
= 62.5_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com S FaxBack 408-970-5600
6
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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