SIA429DJT [VISHAY]
P-Channel 20 V (D-S) MOSFET; P沟道20 V （D -S ）的MOSFET
| 型号： | SIA429DJT |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20 V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiA429DJT
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
ID (A)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
- 12a
- 12a
- 12a
- 4
•
•
0.0205 at VGS = - 4.5 V
0.027 at VGS = - 2.5 V
0.036 at VGS = - 1.8 V
0.060 at VGS = - 1.5 V
New Thermally Enhanced PowerPAK®
SC-70 Package
- 20
24.5 nC
- Small Footprint Area
- Ultra-Thin 0.6 mm height
- Low On-Resistance
•
•
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Thin PowerPAK SC-70-6L-Single
•
•
Load Switch and Charger Switch for Portable Devices
DC/DC Converter
S
Marking Code
G
B P X
Part # code
X X X
Lot traceability
and Date code
D
Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 20
8
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
- 12a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 12a
Continuous Drain Current (TJ = 150 °C)
ID
- 10.6b, c
- 8.5b, c
- 30
- 12a
- 2.9b, c
19
A
Pulsed Drain Current (t = 300 µs)
IDM
IS
T
C = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
T
C = 70 °C
12
Maximum Power Dissipation
PD
W
3.5b, c
2.2b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
28
Maximum
Unit
t 5 s
Steady State
36
°C/W
RthJC
5.3
6.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
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1
New Product
SiA429DJT
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 12
2.7
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS, ID = - 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
- 0.4
- 20
- 1.0
100
- 1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
0.0170
0.022
0.029
0.038
30
0.0205
0.027
0.036
0.060
V
V
V
GS = - 2.5 V, ID = - 2 A
GS = - 1.8 V, ID = - 2 A
GS = - 1.5 V, ID = - 1 A
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
gfs
VDS = - 10 V, ID = - 6 A
S
Ciss
Coss
Crss
Input Capacitance
1750
270
240
41
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 10 A
Output Capacitance
pF
Reverse Transfer Capacitance
62
37
Qg
Total Gate Charge
24.5
2.4
6.7
6.3
22
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 10 V, VGS = - 4.5 V, ID = - 10 A
f = 1 MHz
1.3
13
35
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
25
40
V
DD = - 10 V, RL = 1.2
ID - 8.5 A, VGEN = - 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
70
105
40
25
ns
Turn-On Delay Time
Rise Time
10
15
10
15
V
DD = - 10 V, RL = 1.2
ID - 8.5 A, VGEN = - 8 V, Rg = 1
Turn-Off Delay Time
Fall Time
80
120
40
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 12
- 30
- 1.2
60
A
IS = - 8.5 A, VGS = 0 V
Body Diode Voltage
- 0.8
35
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
18
30
IF = - 8.5 A, dI/dt = 100 A/µs, TJ = 25 °C
13
ns
tb
Reverse Recovery Rise Time
22
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
16
12
8
V
= 5 V thru 2 V
GS
25
20
15
10
5
V
= 1.5 V
GS
T
= 25 °C
C
4
T
= 125 °C
0.8
C
T
= - 55 °C
1.6
V
= 1 V
2.5
C
GS
0
0
0.0
0.0
0.5
1.0
1.5
2.0
3.0
0.4
1.2
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3500
3000
2500
2000
1500
1000
500
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
= 1.5 V
GS
V
= 1.8 V
GS
C
iss
V
V
= 2.5 V
= 4.5 V
GS
GS
C
oss
C
rss
0
0
5
10
15
20
0
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.65
1.45
1.25
1.05
0.85
0.65
I
= 10 A
D
V
= 5 V
DS
6
4
2
0
V
= 4.5 V; 2.5 V; I = 6 A
D
GS
V
= 10 V
DS
V
= 16 V
DS
V
= 1.8 V; I = 6 A
D
GS
V
= 1.5 V; I = 1 A
D
GS
0
10
20
30
40
50
- 50 - 25
0
25
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75
100 125 150
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
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New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.06
100
0.05
0.04
0.03
0.02
0.01
T
= 150 °C
J
10
I
= 1 A; T = 125 °C
J
D
I
= 6 A; T = 125 °C
J
D
T
= 25 °C
J
1
I
= 6 A; T = 25 °C
J
D
I
= 1 A; T = 25 °C
J
D
0.1
0.0
0
1
2
3
4
5
0.2
0.4
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
30
25
20
15
10
5
I
= 250 μA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
100 μs
1 ms
10 ms
100 ms
1 s, 10 s
0.1
DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
15
10
5
25
20
15
Package Limited
10
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
www.vishay.com
5
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67038.
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Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号：
SIA431DJ-T1-GE3
TRANSISTOR 9.6 A, 20 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SC-70, 6 PIN, FET General Purpose Power
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