SIA921EDJ [VISHAY]
Dual P-Channel 20-V (D-S) MOSFET; 双P通道20 - V（D -S）的MOSFET
| 型号： | SIA921EDJ |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiA921EDJ
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
- 4.5a
- 4.5a
•
•
0.059 at VGS = - 4.5 V
0.098 at VGS = - 2.5 V
New Thermally Enhanced PowerPAK® SC-70
Package
- 20
4.9 nC
- Small Footprint Area
- Low On-Resistance
•
•
•
Typical ESD Protection: 1700 V
High Speed Switching
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Load Switch, PA Switch and Battery Switch for Portable
Devices
DC/DC Converters
PowerPAK SC-70-6 Dual
S1
S2
•
1
S1
Marking Code
2
G1
D F X
3
D1
D2
Part # code
X X X
G1
G2
D1
Lot Traceability
and Date code
D2
6
G2
5
2.05 mm
2.05 mm
S2
4
D1
D2
P-Channel MOSFET
P-Channel MOSFET
Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
12
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 4.5a
T
C = 25 °C
- 4.5a
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
- 4.5a, b, c
- 3.7b, c
- 15
- 4.5a
- 1.6b, c
7.8
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
5
PD
Maximum Power Dissipation
W
1.9b, c
1.2b, c
TA = 70 °C
TJ, Tstg
- 55 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
52
Maximum
Unit
t ≤ 5 s
Steady State
65
16
°C/W
RthJC
12.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
www.vishay.com
1
SiA921EDJ
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
mV/°C
V
V
DS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
- 14
2.5
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
VDS = VGS, ID = - 250 µA
- 0.5
- 1.4
1
VDS = 0 V, VGS
DS = 0 V, VGS
=
=
4.5 V
12 V
IGSS
Gate-Source Leakage
V
10
µA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
- 1
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
- 10
- 15
A
Ω
S
VGS = - 4.5 V, ID = - 3.6 A
0.048
0.080
11
0.059
0.098
Drain-Source On-State Resistancea
V
GS = - 2.5 V, ID = - 1.5 A
Forward Transconductancea
VDS = - 10 V, ID = - 3.6 A
Dynamicb
VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A
f = 1 MHz
15
7.1
1.3
2.1
6.3
20
20
25
10
5
23
11
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
30
30
40
15
10
20
40
15
V
DD = - 10 V, RL = 2.7 Ω
ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
12
25
10
V
DD = - 10 V, RL = 2.7 Ω
ID ≅ - 3.7 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 4.5
- 15
- 1.2
30
A
IS = - 3.7 A, VGS = 0 V
Body Diode Voltage
- 0.9
15
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
6
12
IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C
8.5
6.5
ns
tb
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
-2
-3
-4
-5
-6
-7
-8
-9
0.5
10
10
10
10
10
10
10
10
0.4
0.3
I
at 150 °C
GSS
I
at 25 °C (mA)
GSS
I
at 25 °C
GSS
0.2
0.1
0.0
-10
10
0
3
6
9
12
15
18
0
3
6
9
12
15
18
V
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
GS
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
5
4
3
2
1
0
15
12
9
V
GS
= 10 V thru 3 V
V
GS
= 2.5 V
V
GS
= 2 V
6
T
= 25 °C
C
3
T
C
= 125 °C
1.0
V
GS
= 1.5 V
T
= - 55 °C
C
0
0.0
0.0
0.5
1.5
2.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
1000
800
600
400
200
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
3
6
9
12
15
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
www.vishay.com
3
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
1.5
I
= 3.6 A
D
I
= 4.6 A
D
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GS
= 4.5 V
6
V
GS
= 2.5 V
V
DS
= 10 V
V
DS
= 16 V
4
2
0
0
3
6
9
12
15
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
J
On-Resistance vs. Junction Temperature
Gate Charge
0.20
0.15
0.10
0.05
0.00
100
10
1
I
= 3.6 A; T = 25 °C
J
D
I
= 3.6 A; T = 125 °C
J
D
I
= 1 A; T = 125 °C
J
D
T
J
= 150 °C
I
= 1 A; T = 25 °C
J
D
T
J
= 25 °C
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
20
15
10
5
I
= 250 µA
D
0
0.001
0.01
0.1
1
10
1000
100
- 50 - 25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
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4
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by R
*
DS(on)
10
1
100 µs
1 ms
10 ms
T
A
= 25 °C
Single Pulse
100 ms
0.1
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
8
12
10
8
6
4
2
0
6
Package Limited
4
2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
www.vishay.com
5
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64734.
www.vishay.com
6
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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