SIB912DK [VISHAY]
Dual N-Channel 20-V MOSFET; 双N沟道20V的MOSFET
| 型号： | SIB912DK |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 20-V MOSFET |
| 文件： | 总9页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiB912DK
Vishay Siliconix
Dual N-Channel 20-V MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, g
1.5
TrenchFET® Power MOSFET
0.216 at VGS = 4.5 V
0.268 at VGS = 2.5 V
0.375 at VGS = 1.8 V
New Thermally Enhanced PowerPAK®
SC-75 Package
RoHS
1.5
20
1.2 nC
COMPLIANT
- Small Footprint Area
- Low On-Resistance
1.0
APPLICATIONS
•
Load Switch, PA Switch and Battery Switch for Portable
Devices
PowerPAK SC75-6L-Dual
•
DC/DC Converter
D
1
D
2
1
S1
2
Marking Code
G1
3
D1
D2
C A X
X X X
Part # code
D1
G
1
G
2
D2
6
Lot Traceability
and Date code
G2
5
1.60 mm
1.60 mm
S2
4
S
1
S
2
Ordering Information: SiB912DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
20
Unit
V
VGS
8
1.5a
1.5a
T
C = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
1.5a, b, c
TA = 25 °C
TA = 70 °C
1.4b, c
5
1.5a
0.9b, c
3.1
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
2.0
PD
Maximum Power Dissipation
W
1.1b, c
0.7b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
90
Maximum
115
Unit
t ≤ 5 s
°C/W
RthJC
Steady State
32
40
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
g. Based on TC = 25 °C.
Document Number: 68883
S-82022-Rev. A, 01-Sep-08
www.vishay.com
1
New Product
SiB912DK
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
20
V
V
DS Temperature Coefficient
22
- 2
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = 250 µA
0.4
5
1.0
100
1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.8 A
VGS = 2.5 V, ID = 1.6 A
VGS = 1.8 V, ID = 0.3 A
VDS = 10 V, ID = 1.8 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
10
ID(on)
0.180
0.223
0.300
3
0.216
0.268
0.375
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
Ω
gfs
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
95
24
11
2.0
1.2
0.3
0.15
2.5
5
VDS = 10 V, VGS = 0 V, f = 1 MHz
pF
VDS = 10 V, VGS = 8 V, ID = 1.8 A
VDS = 10 V, VGS = 4.5 V, ID = 1.8 A
f = 1 MHz
3.0
1.8
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
5.0
10
20
36
16
4
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
10
24
8
V
DD = 10 V, RL = 7.1 Ω
ID ≅ 1.4 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
2
9
18
16
14
V
DD = 10 V, RL = 7.1 Ω
ID ≅ 1.4 A, VGEN = 8 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
8
7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
1.5c
5
IS
ISM
VSD
trr
TC = 25 °C
A
IS = 1.4 A, VGS = 0 V
Body Diode Voltage
0.7
9
1.2
18
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
3
IF = 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C
6
ns
tb
Reverse Recovery Rise Time
3
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68883
S-82022-Rev. A, 01-Sep-08
New Product
SiB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
0.8
0.6
0.4
0.2
0.0
5
V
= 5 thru 2.5 V
GS
4
3
2
1
0
V
= 2 V
GS
T
= 25 °C
C
V
GS
= 1.5 V
T
C
= 125 °C
0.5
T
C
= - 55 °C
1.5
V
GS
= 1 V
0.0
1.0
2.0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
150
120
90
60
30
0
0.5
0.4
0.3
0.2
0.1
0.0
V
GS
= 1.8 V
C
iss
V
= 2.5 V
GS
V
= 4.5 V
GS
C
oss
C
rss
0
4
8
12
16
20
0
1
2
3
4
5
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
6
4
2
0
1.8
1.5
1.2
0.9
0.6
I
= 1.8 A
D
I
= 1.8 A
D
V
GS
= 2.5 V
V
DS
= 10 V
V
DS
= 16 V
V
GS
= 4.5 V
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68883
S-82022-Rev. A, 01-Sep-08
www.vishay.com
3
New Product
SiB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
0.3
0.2
0.1
0.0
10
I
= 1.8 A
D
T
= 125 °C
J
T
J
= 150 °C
1
T
= 25 °C
J
T
J
= 25 °C
0.1
0
2
4
6
8
0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
6
4
2
0
0.85
0.75
0.65
0.55
0.45
0.35
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
Limited by R
DS(on)*
100 µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
T
= 25 °C
A
Single Pulse
BVDSS Limited
0.01
100
* V > minimum V at which R is specified
DS(on)
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
GS
GS
Safe Operating Area, Junction-to-Case
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4
Document Number: 68883
S-82022-Rev. A, 01-Sep-08
New Product
SiB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
3
2
Package Limited
1
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4
3
2
1
0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68883
S-82022-Rev. A, 01-Sep-08
www.vishay.com
5
New Product
SiB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
Single Pulse
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68883.
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6
Document Number: 68883
S-82022-Rev. A, 01-Sep-08
Package Information
Vishay Siliconix
®
PowerPAK SC75-6L
e
b
e
b
PIN3
PIN2
PIN1
PIN2
PIN1
PIN3
D2
D1
D1
D1
PIN6
K2
PIN5
K1
PIN4
K2
PIN6
K3
PIN5
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
A1
Z
z
DETAIL Z
SINGLE PAD
INCHES
DUAL PAD
DIM
MILLIMETERS
Nom
MILLIMETERS
INCHES
Nom
0.030
-
Min
0.675
0
Max
0.80
0.05
0.33
0.25
1.70
0.77
0.30
1.70
1.20
0.30
0.42
Min
0.027
0
Nom
0.030
Max
Min
0.675
0
Nom
0.75
-
Max
0.80
0.05
0.33
0.25
1.70
0.54
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.013
0.010
0.067
0.030
0.012
0.067
0.047
0.012
0.017
0.032
0.002
0.013
0.010
0.067
0.021
-
-
0.18
0.15
1.53
0.57
0.10
1.53
1.00
0.20
0.32
0.25
0.007
0.006
0.060
0.022
0.004
0.060
0.039
0.008
0.013
0.010
0.18
0.15
1.53
0.34
0.25
0.20
1.60
0.44
0.007
0.006
0.060
0.013
0.010
0.008
0.063
0.017
C
0.20
0.008
D
1.60
0.063
D1
D2
E
0.67
0.026
0.20
0.008
1.60
0.063
1.53
0.51
1.60
0.61
1.70
0.71
0.060
0.020
0.063
0.024
0.067
0.028
E1
E2
E3
e
1.10
0.043
0.25
0.010
0.37
0.015
0.50 BSC
0.180 TYP
0.275 TYP
0.200 TYP
0.255 TYP
0.300 TYP
0.25
0.020 BSC
0.007 TYP
0.011 TYP
0.008 TYP
0.010 TYP
0.012 TYP
0.010
0.50 BSC
0.245 TYP
0.320 TYP
0.200 BSC
0.020 BSC
0.010 TYP
0.013 TYP
0.008 TYP
K
K1
K2
K3
K4
L
0.15
0.35
0.006
0.014
0.15
0.03
0.25
0.08
0.35
0.13
0.006
0.001
0.010
0.003
0.014
0.005
T
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual
2.2
(0.087)
1.25
(0.049)
0.25
(0.01)
2.2
(0.087)
(0,0)
0.32
0.44
(0.013)
(0.017)
0.25
0.375
(0.01)
(0.015)
0.5
(0.02)
1
Dimensions in mm/(Inches)
Return to Index
Document Number: 70489
Revision: 28-Oct-08
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15
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1
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