SIHA11N80AE-GE3 [VISHAY]

Power Field-Effect Transistor,;
SIHA11N80AE-GE3
型号: SIHA11N80AE-GE3
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power Field-Effect Transistor,

文件: 总7页 (文件大小:135K)
下载:  下载PDF数据表文档文件

SIHB10N40D-GE3

Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2

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SIHB11N80AE-GE3

Power Field-Effect Transistor,

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Power Field-Effect Transistor,

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100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC

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SIHB12N50C-E3

SiHB12N60E E Series Power MOSFET

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SIHB12N50E-GE3

Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2

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SIHB12N60E

E Series Power MOSFET

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SIHB15N60E

E Series Power MOSFET

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SIHB15N65E-GE3

MOSFET N-CH 650V 15A TO263

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0 VISHAY

SIHB16N50C-E3

Gate Charge Improved Compliant to RoHS Directive 2002/95/EC

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19 VISHAY

SIHB16N50C-E3

N-CHANNEL 500V - Tape and Reel

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SIHB16N50CTL-E3

TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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0 VISHAY

SIHB16N50CTR-E3

TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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E Series Power MOSFET with Fast Body Diode

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0 VISHAY