SIHB22N60AEL-GE3 [VISHAY]
Power Field-Effect Transistor,;
| 型号： | SIHB22N60AEL-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHB22N60AEL
www.vishay.com
Vishay Siliconix
EL Series Power MOSFET
FEATURES
D
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss
D2PAK (TO-263)
)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
G
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
G
S
S
N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) typ. () at 25 °C
VGS = 10 V
0.155
Qg max. (nC)
82
20
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
Q
gs (nC)
gd (nC)
Q
13
Configuration
Single
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and halogen-free
SiHB22N60AEL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
600
V
VGS
30
T
C = 25 °C
21
13
Continuous drain current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed drain current a
IDM
48
Linear derating factor
Single pulse avalanche energy b
1.7
W/°C
mJ
W
EAS
PD
183
Maximum power dissipation
208
Operating junction and storage temperature range
Reverse diode dv/dt d
Soldering recommendations (peak temperature) c
TJ, Tstg
dv/dt
-55 to +150
50
°C
V/ns
°C
For 10 s
260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.6 A
c. 1.6 mm from case
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
S18-0347-Rev. A, 26-Mar-18
Document Number: 92079
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60AEL
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
-
-
°C/W
0.6
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
600
-
-
-
V
V/°C
V
VDS temperature coefficient
VDS/TJ
VGS(th)
-
2.0
-
0.68
Gate-source threshold Voltage (N)
-
4.0
100
1
VGS
VGS
=
=
20 V
30 V
-
nA
μA
Gate-source leakage
IGSS
IDSS
-
-
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V ID = 11 A
VDS = 8 V, ID = 11 A
-
-
-
1
Zero gate voltage drain current
μA
-
10
0.180
-
Drain-source on-state resistance
Forward transconductance
Dynamic
RDS(on)
gfs
-
0.155
16
-
S
Input capacitance
Ciss
Coss
Crss
-
-
-
1757
74
-
-
-
VGS = 0 V,
Output capacitance
V
DS = 100 V,
f = 1 MHz
Reverse transfer capacitance
6
pF
nC
Effective output capacitance, energy
related a
Co(er)
Co(tr)
-
-
48
-
-
VDS = 0 V to 480 V, VGS = 0 V
Effective output capacitance, time
257
related b
Total gate charge
Qg
Qgs
Qgd
td(on)
tr
-
-
41
10
13
27
24
86
28
7.2
82
-
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
VGS = 10 V
ID = 11 A, VDS = 480 V
-
-
-
54
48
172
56
14.4
-
VDD = 480 V, ID = 11 A,
GS = 10 V, Rg = 9.1
ns
V
Turn-off delay time
Fall time
td(off)
tf
-
-
Gate input resistance
Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
3.6
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous source-drain diode current
Pulsed diode forward current
IS
-
-
-
-
21
48
A
G
ISM
S
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
TJ = 25 °C, IS = 11 A, VGS = 0 V
-
-
-
-
-
1.2
570
8.2
-
V
ns
μC
A
285
4.1
27
TJ = 25 °C, IF = IS = 11 A,
di/dt = 100 A/μs, VR = 400 V
Qrr
IRRM
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
S18-0347-Rev. A, 26-Mar-18
Document Number: 92079
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60AEL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
0.5
0
50
ID = 11 A
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
TJ = 25 °C
40
30
20
10
0
BOTTOM 5 V
VGS = 10 V
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
5
10
15
20
20
20
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
30
24
18
12
6
100 000
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
TJ = 150 °C
VGS = 0 V, f = 1 MHz
C
C
iss = Cgs + Cgd, Cds shorted
rss = Cgd
10 000
1000
100
10
Coss = Cds + Cgd
Ciss
BOTTOM 5 V
Coss
Crss
0
1
0
5
10
15
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 000
1000
100
12
10
8
50
40
30
20
10
0
TJ = 25 °C
Eoss
6
TJ = 150 °C
4
Coss
2
VDS = 29.2 V
10
0
0
100
200
300
400
500
600
0
5
10
15
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S18-0347-Rev. A, 26-Mar-18
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 92079
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60AEL
www.vishay.com
Vishay Siliconix
12
9
25
20
15
10
5
VDS = 480 V
VDS = 300 V
DS = 120 V
V
6
3
0
0
0
12
24
36
48
25
50
75
100
125
150
Qg, Total Gate Charge (nC)
TC, Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
100
800
775
750
725
700
675
650
TJ = 150 °C
10
TJ = 25 °C
1
625
VGS = 0 V
1.0 1.2
ID = 1 mA
0.1
600
0.2
0.4
0.6
0.8
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Operation in this area
limited by RDS(on)
100
10
IDM limited
100 μs
Limited by RDS(on)
*
1
1 ms
0.1
0.01
10 ms
TC = 25 °C
TJ = 150 °C
single pulse
BVDSS limited
100
1
10
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S18-0347-Rev. A, 26-Mar-18
Document Number: 92079
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60AEL
www.vishay.com
Vishay Siliconix
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
V
-
DD
VDS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
Qg
10 V
90 %
Qgs
Qgd
10 %
VGS
VG
td(on) tr
td(off) tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
L
Same type as D.U.T.
VDS
Vary tp to obtain
required IAS
50 kΩ
12 V
0.2 μF
D.U.T.
Rg
+
-
0.3 μF
VDD
+
-
VDS
IAS
D.U.T.
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
Document Number: 92079
S18-0347-Rev. A, 26-Mar-18
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60AEL
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
D.U.T.
•
•
Low stray inductance
Ground plane
3
• Low leakage inductance
current transformer
-
+
2
4
-
+
-
1
Rg
• dV/dt controlled by Rg
+
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
VDD
-
• D.U.T. - device under test
1
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V a
GS
D.U.T. ISD waveform
D.U.T. VDS waveform
2
Reverse
recovery
current
Body diode forward
current
dI/dt
3
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
4
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?92079.
S18-0347-Rev. A, 26-Mar-18
Document Number: 92079
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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