SIHB22N60EF-GE3 [VISHAY]
Power Field-Effect Transistor,;
| 型号： | SIHB22N60EF-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHB22N60EF
Vishay Siliconix
www.vishay.com
EF Series Power MOSFET With Fast Body Diode
FEATURES
D
• Low figure-of-merit (FOM) Ron x Qg
D2PAK (TO-263)
• Low input capacitance (Ciss
)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
G
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
S
G
S
N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) typ. () at 25 °C
VGS = 10 V
0.158
Qg max. (nC)
96
9
Q
gs (nC)
gd (nC)
Q
21
- Welding
- Induction heating
Configuration
Single
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and halogen-free
SiHB22N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
600
V
VGS
30
T
C = 25 °C
19
12
Continuous drain current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed drain current a
IDM
46
Linear derating factor
Single pulse avalanche energy b
1.4
W/°C
mJ
W
EAS
PD
144
Maximum power dissipation
179
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt d
TJ, Tstg
-55 to +150
70
°C
TJ = 125 °C
For 10 s
dv/dt
V/ns
°C
50
Soldering recommendations (peak temperature) c
260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.2 A
c. 1.6 mm from case
d. ISD ID, di/dt = 400 A/μs, starting TJ = 25 °C
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92245
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60EF
Vishay Siliconix
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
-
-
°C/W
0.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
600
-
-
-
V
V/°C
V
VDS temperature coefficient
VDS/TJ
VGS(th)
-
2.0
-
0.68
Gate-source threshold voltage (N)
-
4.0
100
1
VGS
VGS
=
=
20 V
30 V
-
nA
μA
Gate-source leakage
IGSS
IDSS
-
-
-
VDS = 480 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V ID = 11 A
-
1
Zero gate voltage drain current
μA
-
-
500
0.182
-
Drain-source on-state resistance
Forward transconductance a
Dynamic
RDS(on)
gfs
-
0.158
5.8
VDS = 30 V, ID = 11 A
-
S
Input capacitance
Ciss
Coss
Crss
-
-
-
1423
73
-
-
-
VGS = 0 V,
Output capacitance
V
DS = 100 V,
f = 1 MHz
Reverse transfer capacitance
5
pF
nC
Effective output capacitance, energy
related a
Co(er)
Co(tr)
-
-
48
-
-
VDS = 0 V to 480 V, VGS = 0 V
Effective output capacitance, time
240
related b
Total gate charge
Qg
Qgs
Qgd
td(on)
tr
-
-
48
9
96
-
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
VGS = 10 V
ID = 11 A, VDS = 480 V
-
21
15
21
58
25
0.6
-
-
30
42
87
50
1.2
-
VDD = 480 V, ID = 11 A,
GS = 10 V, Rg = 9.1
ns
V
Turn-off delay time
Fall time
td(off)
tf
-
-
Gate input resistance
Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
0.3
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous source-drain diode current
Pulsed diode forward current
IS
-
-
-
-
19
46
A
G
ISM
S
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
TJ = 25 °C, IS = 11 A, VGS = 0 V
-
-
-
-
-
1.2
226
1.4
-
V
ns
μC
A
113
0.7
11
TJ = 25 °C, IF = IS = 11 A,
di/dt = 100 A/μs, VR = 400 V
Qrr
IRRM
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92245
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60EF
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
50
40
30
20
10
0
10000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0
10000
1000
100
= 11 A
TJ = 25 °C
ID
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
VGS = 10 V
6 V
5 V
10
10
0
5
10
15
20
20
20
-60 -40 -20
0
20 40 60 80 100 120 140 160
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Axis Title
Axis Title
32
10000
1000
100
10000
1000
100
100 000
10 000
1000
100
15 V
TJ = 150 °C
14 V
13 V
12 V
7 V
Ciss
24
16
8
11 V
10 V
9 V
6 V
8 V
Coss
Crss
10
5 V
VGS = 0 V, f = 1 MHz
1
C
C
iss = Cgs + Cgd, Cds shorted
rss = Cgd
Coss = Cds + Cgd
300 400
VDS - Drain-to-Source Voltage (V)
0
10
0.1
10
0
5
10
15
0
100
200
500
600
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Axis Title
Axis Title
60
10000
1000
100
10 000
1000
100
14
12
10
8
TJ = 25 °C
45
Coss
30
Eoss
TJ = 150 °C
6
4
15
2
VDS = 28.4 V
15
0
10
10
0
0
5
10
0
100
200
300
400
500
600
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92245
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60EF
Vishay Siliconix
www.vishay.com
Axis Title
Axis Title
20
15
10
5
10000
1000
100
12
9
10000
1000
100
VDS = 480 V
V
DS = 300 V
DS = 120 V
V
6
3
0
10
0
10
25
50
75
100
125
150
0
15
30
45
60
TC - Case Temperature (°C)
Qg - Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title
Axis Title
100
10
1
10000
775
750
725
700
675
650
625
600
10000
TJ = 25 °C
TJ = 150 °C
1000
100
10
1000
100
10
ID = 1 mA
VGS = 0 V
1.2
VSD - Source-Drain Voltage (V)
0.1
0.2
0.4
0.6
0.8
1.0
1.4
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Axis Title
Operation in this area
limited by RDS(on)
100
10
10000
IDM limited
100 µs
00
a
Limited by RDS(on)
1
1 ms
100
10 ms
0.1
0.01
TC = 25 °C,
TJ = 150 °C,
single pulse
BVDSS limited
100
10
1000
1
10
VDS - Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92245
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60EF
Vishay Siliconix
www.vishay.com
Axis Title
1
10000
1000
100
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
10
1
0.001
0.01
0.1
Pulse Time (s)
Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
V
-
DD
VDS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
Qg
10 V
90 %
Qgs
Qgd
10 %
VGS
VG
td(on) tr
td(off) tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
VDS
Vary tp to obtain
required IAS
50 kΩ
12 V
0.2 μF
D.U.T.
Rg
0.3 μF
+
-
VDD
+
-
VDS
IAS
D.U.T.
10 V
tp
VGS
0.01 Ω
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
Document Number: 92245
S19-0120-Rev. A, 04-Feb-2019
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60EF
Vishay Siliconix
www.vishay.com
Peak Diode Recovery dv/dt Test Circuit
+
Circuit layout considerations
D.U.T.
•
•
Low stray inductance
Ground plane
3
• Low leakage inductance
current transformer
-
+
2
4
-
+
-
1
Rg
• dv/dt controlled by Rg
+
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
VDD
-
• D.U.T. - device under test
1
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V a
GS
D.U.T. ISD waveform
D.U.T. VDS waveform
2
Reverse
recovery
current
Body diode forward
current
di/dt
3
Diode recovery
dv/dt
VDD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
4
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?92245.
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92245
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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