SIHF634NSTR-E3 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHF634NSTR-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
250
Available
RDS(on) (Ω)
Qg (Max.) (nC)
VGS = 10 V
0.435
RoHS*
COMPLIANT
34
6.5
Q
Q
gs (nC)
gd (nC)
16
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
I2PAK (TO-262)
TO-220
D
S
G
D
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
D2PAK (TO-263)
S
N-Channel MOSFET
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL/SiHF634NL) is
available for low-profile application.
D
G
S
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
IRF634NSPbF
SiHF634NS-E3
IRF634NS
D2PAK (TO-263)
IRF634NSTRLPbFa
SiHF634NSTL-E3a
IRF634NSTRLa
D2PAK (TO-263)
IRF634NSTRRPbFa
SiHF634NSTR-E3a
IRF634NSTRRa
SiHF634NSTRa
I2PAK (TO-262)
IRF634NPbF
SiHF634N-E3
IRF634N
IRF634NLPbF
Lead (Pb)-free
SiHF634NL-E3
-
-
SnPb
SiHF634N
SiHF634NS
SiHF634NSTLa
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
250
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
T
C = 25 °C
8.0
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
5.6
A
Pulsed Drain Currenta
IDM
32
Linear Derating Factor
0.59
110
4.8
W/°C
mJ
A
Single Pulse Avalanche Energyb
Avalanche Currenta
EAS
IAR
Repetiitive Avalanche Energya
EAR
8.8
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
1
WORK-IN-PROGRESS
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
W
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
TC = 25 °C
TA = 25 °C
88
PD
3.8
7.3
Peak Diode Recovery dV/dt
dV/dt
V/ns
°C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 175
300c
for 10 s
10
lbf · in
N · m
Mounting Torqued
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambienta
RthJA
-
62
Maximum Junction-to-Ambient
(PCB Mount)b
RthJA
-
40
°C/W
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surfacea
RthJC
RthCS
-
1.7
-
0.50
Notes
a. This is only applied to TO-220 package.
b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
250
-
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.33
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
4.0
100
25
VGS
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
=
20 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
250
0.435
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
5.4
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
620
84
23
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
V
pF
nC
-
34
6.5
16
-
ID = 4.8 A, VDS = 200 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
8.4
16
28
15
-
VDD = 125 V, ID = 4.8 A,
G = 1.3 Ω, see fig. 10b
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
-
R
-
www.vishay.com
2
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Dynamic
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
IS
-
-
-
-
8.0
32
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 4.8 A, VGS = 0 Vb
-
-
-
-
1.3
200
980
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
130
650
ns
nC
TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
102
102
10
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
Top
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
1
Bottom
4.5 V
Bottom
4.5 V
1
0.1
10-2
20 µs Pulse Width
20 µs Pulse Width
TC = 175 °C
TC = 25 °C
0.1
102
0.1
102
0.1
1
10
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
91033_02
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
91033_01
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
3
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
102
1200
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1000
800
600
400
200
0
Ciss
10
1
TJ = 175 °C
Coss
Crss
TJ = 25 °C
20 µs Pulse Width
VDS = 50 V
0.1
4.0
102
103
5.0
6.0
7.0
8.0
9.0
1
10
91033_03
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
91033_05
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
3.5
ID = 4.8 A
ID = 7.9 A
VGS = 10 V
3.0
2.5
2.0
1.5
1.0
0.5
V
DS = 200 V
16
12
V
DS = 125 V
V
DS = 50 V
8
4
For test circuit
see figure 13
0
0.0
- 60- 40- 20
0
20
0
20 40 60 80 100120 140 160 180
10
30
40
QG, Total Gate Charge (nC)
91033_06
TJ
, Junction Temperature (°C)
91033_04
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
4
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
102
10
10.0
8.0
TJ = 175 °C
6.0
4.0
2.0
0.0
1
TJ = 25 °C
VGS = 0 V
1.0 1.2
0.1
0.2
0.6
0.8
0.4
25
50
75
100
125
150
175
VSD, Source-to-Drain Voltage (V)
91033_07
TC, Case Temperature (°C)
91033_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 7 - Typical Source-Drain Diode Forward Voltage
RD
VDS
VGS
D.U.T.
102
RG
Operation in this area limited
+
by RDS(on)
V
DD
-
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10
100 µs
Fig. 10a - Switching Time Test Circuit
1
1 ms
VDS
90 %
TC = 25 °C
TJ = 175 °C
Single Pulse
10 ms
0.1
102
103
1
10
10 %
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
91033_08
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
5
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
1
0 − 0.5
0.2
PDM
0.1
0.05
0.02
0.01
0.1
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
91033_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T
RG
+
-
V
A
DD
IAS
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
200
160
120
80
ID
2.0 A
3.4 A
Top
Bottom 4.8 A
40
0
125
25
75
100
150
175
50
91033_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
www.vishay.com
6
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
ID
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
*
VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91033.
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
UL1042
UL1042 - Uk砤d zr體nowa縪nego mieszacza iloczynowegoWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
ZXFV201
QUAD VIDEO AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
ZXFV201N14
IC-SM-VIDEO AMPWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
ZXFV201N14TA
QUAD VIDEO AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
ZXFV201N14TC
QUAD VIDEO AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
ZXFV302N16
IC-SM-4:1 MUX SWITCHWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
ZXFV4089
VIDEO AMPLIFIER WITH DC RESTORATIONWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
©2020 ICPDF网 联系我们和版权申明