SIHF644NS [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHF644NS |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
250 V
Available
RDS(on) (Ω)
Qg (Max.) (nC)
VGS = 10 V
0.240
RoHS*
COMPLIANT
54
9.2
26
• Fully Avalanche Rated
• Ease of Paralleling
Q
Q
gs (nC)
gd (nC)
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
D2PAK (TO-263)
Single
D
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
D
S
G
G
I2PAK (TO-262)
TO-220
S
N-Channel MOSFET
S
D
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
G
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
IRF644NSPbF
SiHF644NS-E3
IRF644NS
D2PAK (TO-263)
IRF644NSTRLPbFa
SiHF644NSTL-E3a
IRF644NSTRLa
D2PAK (TO-263)
IRF644NSTRRPbFa
SiHF644NSTR-E3a
IRF644NSTRRa
SiHF644NSTRa
I2PAK (TO-262)
IRF644NLPbF
SiHF644NL-E3
IRF644NL
IRF644NPbF
SiHF644N-E3
IRF644N
Lead (Pb)-free
SnPb
SiHF644N
SiHF644NS
SiHF644NSTLa
SiHF644NL
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
20
UNIT
Gate-Source Voltage
VGS
V
TC = 25 °C
TC =100°C
14
Continuous Drain Current
VGS at 10 V
ID
9.9
56
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
1.0
180e
8.4
15
W/°C
mJ
A
EAS
IAR
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
EAR
PD
mJ
W
T
C = 25 °C
150
7.9
dV/dt
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
1
WORK-IN-PROGRESS
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 55 to + 175
300d
UNIT
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω IAS = 8.4 A (see fig. 12).
c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. This is a calculated value limited to TJ = 175 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
TYP.
MAX.
UNIT
Maximum Junction-to-Ambientc
Case-to-Sink, Flat, Greased Surfacec
Maximum Junction-to-Case (Drain)
Maximum Junction-to-Ambient (PCB Mount)d
-
62
-
RthCS
0.50
°C/W
RthJC
-
-
1.0
40
RthJA
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = 20 V
250
-
-
-
V
V/°C
V
-
0.33
2.0
-
-
-
-
-
-
4.0
100
25
-
nA
VDS = 250 V, VGS = 0 V
DS = 200 V, VGS = 0 V, TJ = 150 °C
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
250
0.240
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = 10 V
VDS = 50 V, ID = 8.4 Ab
ID = 8.4 Ab
-
Ω
8.8
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
1060
140
38
-
-
-
VGS = 0 V,
V
DS = 25 V,
pF
nC
f = 1.0 MHz, see fig. 5
-
54
9.2
26
-
ID = 8.4 A, VDS = 200 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
10
21
30
17
-
V
DD = 125 V, ID = 8.4 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
R
G = 6.2 Ω, VGS = 10 V, see fig. 10b
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
www.vishay.com
2
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
14
56
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
-
-
1.3
250
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
165
1.0
ns
µC
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. This is only applied to TO-220 package.
d. When mounted on 1" square PCB (fr-4 or G-10 material).
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS
VGS
15V
10V
TOP
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
10
1
BOTTOM
BOTTOM
4.5V
4.5V
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
3
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
100
10000
V
= 0V, f = 1 MHZ
GS
T = 175°C
J
C
C
C
= C + C , C SHORTED
iss
gs gd ds
= C
gd
rss
oss
= C + C
ds gd
Ciss
1000
100
T = 25°C
J
10
Coss
Crss
V
= 50V
DS
20μs PULSE WIDTH
10
1
1
10
, Drain-to-Source Voltage (V)
100
4
6
8
10
11 13
15
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
V
DS
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
3.5
3.0
2.5
2.0
18
I
= 14A
D
I
= 8.4A
D
V
V
V
= 200V
= 125V
= 50V
DS
DS
DS
16
12
8
1.5
1.0
4
0.5
0.0
V
= 10V
GS
0
-60 -40 -20
0
20 40 60 80 100 120 140160180
0
12
24
36
48
60
T , Junction Temperature (°C)
J
O , Total Gate Charge (nC)
G
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
100
15
12
T = 175°C
J
10
1
9
6
3
0
T = 25°C
J
V
= 0V
GS
0.1
25
50
75
100
125
150
175
0.0
0.4
0.8
1.1
1.5
T
= Case Temperature (°C)
C
V
, Source-to-Drain Voltage (V)
SD
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
VDS
1000
100
10
VGS
D.U.T.
RG
+
OPERATION THIS AREA
LIMITED BY R (on)
V
-
DD
DS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
100μsec
1msec
VDS
1
90 %
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
10 %
VGS
1000
1
10
100
td(on) tr
td(off) tf
V
, Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
5
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
10
1
D= 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
SINGLE PULSE
0.02
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D= t / t
1
2
2. Peak T = P
x Z + T
J
DM
thJC C
0.01
0.00001
0.001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T
IAS
RG
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
300
ID
3.4A
5.9A
TOP
BOTTOM 8.4A
240
180
120
60
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (° C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
www.vishay.com
6
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
0.2 µF
12 V
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
ID
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
• Ground plane
D.U.T
•
• Low leakage inductance
current transformer
-
+
-
-
+
RG
+
-
VDD
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91038.
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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