SIHF740LC [VISHAY]
TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power;
| 型号： | SIHF740LC |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
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IRF740LC, SiHF740LC
Vishay Siliconix
Power MOSFET
FEATURES
• Ultra Low Gate Charge
PRODUCT SUMMARY
VDS (V)
400
Available
• Reduced Gate Drive Requirement
RDS(on) (Ω)
VGS = 10 V
0.55
• Enhanced 30 V VGS Rating
RoHS*
COMPLIANT
Qg (Max.) (nC)
39
10
• Reduced Ciss, Coss, Crss
Q
Q
gs (nC)
gd (nC)
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
19
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
D
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs ofter the designer a new standard in power
transistors for switching applications.
TO-220AB
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220AB
IRF740LCPbF
SiHF740LC-E3
IRF740LC
Lead (Pb)-free
SnPb
SiHF740LC
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
400
V
VGS
30
TC = 25 °C
TC = 100 °C
10
Continuous Drain Current
VGS at 10 V
ID
A
6.3
Pulsed Drain Currenta
IDM
32
Linear Derating Factor
1.0
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
520
10
EAR
13
125
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740LC, SiHF740LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
400
-
-
-
V
V/°C
V
-
2.0
-
0.76
-
-
-
-
-
-
4.0
VGS
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ab
=
20 V
100
25
nA
-
Zero Gate Voltage Drain Current
IDSS
μA
-
250
0.55
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
3.0
S
VGS = 0 V,
VDS = 25 V,
Input Capacitance
Ciss
Coss
Crss
-
-
-
1100
190
18
-
-
-
Output Capacitance
pF
Reverse Transfer Capacitance
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
-
-
-
-
39
10
ID = 10 A, VDS = 320 V
see fig. 6 and 13b
Gate-Source Charge
Qgs
VGS = 10 V
nC
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
19
-
11
31
25
20
-
VDD = 200 V, ID = 10 A ,
Rg = 9.1 Ω, RD = 20 Ω, see fig. 10b
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
10
32
A
G
Pulsed Diode Forward Currenta
ISM
S
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
2.0
570
4.2
V
Body Diode Voltage
VSD
trr
-
-
-
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
380
2.8
ns
μC
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740LC, SiHF740LC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
100
10-1
101
100
150 °C
Bottom 4.5 V
25 °C
4.5 V
10-1
20 µs Pulse Width
TC = 25 °C
20 µs Pulse Width
VDS = 50 V
10-2
10-2
10-2
10-1
100
101
4
5
6
7
8
9
10
VDS, Drain-to-Source Voltage (V)
91053_01
91053_03
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
3.0
VGS
ID = 10 A
101
100
Top
15 V
10 V
VGS = 10 V
2.5
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
2.0
1.5
1.0
0.5
0.0
4.5 V
Bottom
10-1
10-2
20 µs Pulse Width
TC = 150 °C
101
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
10-2
10-1
100
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
91053_04
91053_02
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
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3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740LC, SiHF740LC
Vishay Siliconix
2000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1600
1200
800
400
0
Ciss
150 °C
101
25 °C
Coss
Crss
VGS = 0 V
1.6 1.8
100
100
101
1.4
0.6
0.8
1.0
1.2
VDS, Drain-to-Source Voltage (V)
91053_05
VSD, Source-to-Drain Voltage (V)
91053_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
5
20
ID = 11 A
Operation in this area limited
by RDS(on)
V
DS = 320 V
DS = 200 V
DS = 80 V
2
16
102
5
V
V
10 µs
12
8
2
10
100 µs
5
1 ms
2
1
10 ms
4
5
TC = 25 °C
TJ = 150 °C
Single Pulse
For test circuit
see figure 13
2
0.1
0
2
5
2
5
2
5
1
10
102
103
36
0
12
30
42
6
18
24
VDS, Drain-to-Source Voltage (V)
91053_08
QG, Total Gate Charge (nC)
91053_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740LC, SiHF740LC
Vishay Siliconix
RD
VDS
VGS
D.U.T.
10
8
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
6
4
Fig. 10a - Switching Time Test Circuit
VDS
2
0
90 %
25
50
75
100
150
125
TC, Case Temperature (°C)
91053_09
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
0 − 0.5
PDM
0.2
0.1
0.1
t1
0.05
t2
Notes:
0.02
0.01
Single Pulse
(Thermal Response)
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91053_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740LC, SiHF740LC
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
IAS
RG
+
-
VDD
VDS
A
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
1200
ID
Top
4.5 A
6.3 A
1000
800
600
400
200
Bottom 10 A
VDD = 50 V
25
0
125
100
150
50
75
91053_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740LC, SiHF740LC
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
SD
Ripple ≤ 5 %
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91053.
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220AB
A
MILLIMETERS
MIN.
INCHES
MAX.
E
DIM.
A
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
F
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
Ø P
b
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
* M
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Document Number: 71195
Revison: 01-Nov-10
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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