SIHF830A [VISHAY]

Power MOSFET; 功率MOSFET


型号：	SIHF830A
厂家：	VISHAY
描述：	Power MOSFET 功率MOSFET
文件：	总8页 (文件大小：969K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF830A, SiHF830A

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

_DS(on)(Ω)

V_GS= 10 V

1.4

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Q_g(Max.) (nC)

6.3

COMPLIANT

_gs(nC)

_gd(nC)

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Configuration

Single

• Effective C_ossSpecified

• Lead (Pb)-free Available

TO-220

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge

N-Channel MOSFET

• Full Bridge

ORDERING INFORMATION

Package

TO-220

IRF830APbF

SiHF830A-E3

IRF830A

Lead (Pb)-free

SnPb

SiHF830A

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

5.0

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

3.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

230

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

5.0

E_AR

7.4

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.3

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 18 mH, R_G= 25 Ω, I_AS= 5.0 A (see fig. 12).

c. I_SD≤ 5.0 A, dI/dt ≤ 370 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91061

S-81145-Rev. B, 02-Jun-08

www.vishay.com

IRF830A, SiHF830A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

R_thJA

R_thCS

R_thJC

0.50

°C/W

1.7

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

V_DSTemperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

V_DS

ΔV_DS/T_J

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

Reference to 25 °C, I_D= 1 mA

V_DS= V_GS, I_D= 250 µA

500

V/°C

0.60

2.0

4.5

V_GS

V_DS= 500 V, V_GS= 0 V

V_DS= 400 V, V_GS= 0 V, T_J= 125 °C

V_GS= 10 V

I_D= 3.0 A^b

30 V

100

Zero Gate Voltage Drain Current

I_DSS

µA

250

1.4

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs

V_DS= 50 V, I_D= 3.0 A^b

2.8

V_GS= 0 V,

Input Capacitance

C_iss

C_oss

C_rss

C_oss

620

4.3

886

Output Capacitance

V_DS= 25 V,

Reverse Transfer Capacitance

Output Capacitance

f = 1.0 MHz, see fig. 5

V_GS= 0 V; V_DS= 1.0 V, f = 1.0 MHz

V_GS= 0 V; V_DS= 400 V, f = 1.0 MHz

V_GS= 0 V; V_DS= 0 V to 400 V^c

Output Capacitance

Effective Output Capacitance

Total Gate Charge

_osseff.

Q_g

6.3

I_D= 5.0 A, V_DS= 400 V,

V_GS= 10 V

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

see fig. 6 and 13^b

Turn-On Delay Time

Rise Time

t_d(on)

t_r

t_d(off)

t_f

_DD= 250 V, I_D= 5.0 A,

Turn-Off Delay Time

Fall Time

_G= 14 Ω, R_D= 49 Ω, see fig. 10^b

Drain-Source Body Diode Characteristics

MOSFET symbol

showing the

integral reverse

p - n junction diode

Continuous Source-Drain Diode Current

Pulsed Diode Forward Current^a

I_S

5.0

I_SM

T_J= 25 °C, I_S= 5.0 A, V_GS= 0 V^b

1.5

650

2.4

Body Diode Voltage

V_SD

t_rr

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

430

µC

T_J= 25 °C, I_F= 5.0 A, dI/dt = 100 A/µs^b

Q_rr

t_on

1.62

Intrinsic turn-on time is negligible (turn-on is dominated by L_Sand L_D)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

c. C_osseff. is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80 % V_DS

www.vishay.com

Document Number: 91061

S-81145-Rev. B, 02-Jun-08

IRF830A, SiHF830A

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics

Document Number: 91061

S-81145-Rev. B, 02-Jun-08

www.vishay.com

IRF830A, SiHF830A

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

Document Number: 91061

S-81145-Rev. B, 02-Jun-08

IRF830A, SiHF830A

Vishay Siliconix

R_D

V_DS

V_GS

D.U.T.

R_G

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V_DS

90 %

10 %

V_GS

t_d(on)t_r

t_d(off)t_f

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V_DS

15 V

t_p

Driver

V_DS

D.U.T.

I_AS

R_G

I_AS

20 V

0.01 Ω

t_p

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91061

S-81145-Rev. B, 02-Jun-08

www.vishay.com

IRF830A, SiHF830A

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

Current regulator

Same type as D.U.T.

50 kΩ

Q_G

10 V

12 V

0.2 µF

0.3 µF

Q_GS

Q_GD

V_DS

D.U.T.

V_G

V_GS

3 mA

Charge

I_G

I_D

Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

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Document Number: 91061

S-81145-Rev. B, 02-Jun-08

IRF830A, SiHF830A

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T.

• Low leakage inductance

current transformer

R_G

• dV/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor "D"

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

Period

D =

= 10 V*

D.U.T. I waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. V waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode forward drop

Ripple ≤ 5 %

Inductor current

* V_GS= 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91061.

Document Number: 91061

S-81145-Rev. B, 02-Jun-08

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

SIHF830A [VISHAY]

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