SIHF840LCSTR [VISHAY]
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power;
| 型号： | SIHF840LCSTR |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF840, SiHF840
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
500
Available
• Repetitive Avalanche Rated
• Fast Switching
R
DS(on) (Ω)
VGS = 10 V
0.85
RoHS*
Qg (Max.) (nC)
63
9.3
COMPLIANT
• Ease of Paralleling
Q
Q
gs (nC)
gd (nC)
32
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220
IRF840PbF
SiHF840-E3
IRF840
Lead (Pb)-free
SnPb
SiHF840
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VDS
500
20
VGS
V
TC = 25 °C
TC =100°C
8.0
Continuous Drain Current
V
GS at 10 V
ID
5.1
A
Pulsed Drain Currenta
IDM
32
Linear Derating Factor
1.0
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
510
8.0
EAR
13
mJ
W
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
T
C = 25 °C
PD
125
3.5
dV/dt
TJ, Tstg
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
10
°C
for 10 s
6-32 or M3 screw
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
www.vishay.com
1
IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
-
V
V/°C
V
-
0.78
2.0
-
-
-
-
-
-
4.0
VGS
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
=
20 V
-
100
25
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
250
0.85
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
4.9
S
VGS = 0 V,
VDS = 25 V,
Input Capacitance
Ciss
Coss
Crss
-
-
-
1300
310
-
-
-
Output Capacitance
pF
Reverse Transfer Capacitance
120
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
-
-
-
-
63
ID = 8 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Source Charge
Qgs
VGS = 10 V
9.3
nC
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
32
-
14
23
49
20
-
VDD = 250 V, ID = 8 A
G = 9.1 Ω, RD = 31 Ω, see fig. 10b
ns
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
8.0
32
A
G
Pulsed Diode Forward Currenta
ISM
-
-
S
TJ = 25 °C, IS = 8 A, VGS = 0 Vb
2.0
970
8.9
V
Body Diode Voltage
VSD
trr
-
-
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
460
4.2
ns
µC
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
IRF840, SiHF840
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
Top
15 V
10 V
150 °C
101
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
25 °C
Bottom 4.5 V
100
4.5 V
100
20 µs Pulse Width
VDS = 50 V
20 µs Pulse Width
TC = 25 °C
100
101
4
5
6
7
8
9
10
91070_03
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
91070_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
ID = 8.0 A
VGS = 10 V
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
4.5 V
Bottom 4.5 V
100
20 µs Pulse Width
TC = 150 °C
100
101
- 60 - 40 - 20
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
0
20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
91070_02
91070_04
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
www.vishay.com
3
IRF840, SiHF840
Vishay Siliconix
2500
2000
1500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
150 °C
Coss = Cds + Cgd
101
Ciss
25 °C
1000
500
Coss
Crss
VGS = 0 V
1.4
1.2
100
0
0.4
0.6
0.8
1.0
100
101
VSD, Source-to-Drain Voltage (V)
91070_07
VDS, Drain-to-Source Voltage (V)
91070_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
102
Operation in this area limited
ID = 8.0 A
5
by RDS(on)
V
DS = 400 V
16
12
10 µs
2
V
DS = 250 V
10
V
DS = 100 V
100 µs
5
2
1 ms
8
4
0
1
10 ms
5
TC = 25 °C
TJ = 150 °C
Single Pulse
2
For test circuit
see figure 13
0.1
2
5
2
5
2
5
2
5
2
5
103
0.1
10
104
102
1
0
30
75
15
45
60
VDS, Drain-to-Source Voltage (V)
91070_08
QG, Total Gate Charge (nC)
91070_06
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
IRF840, SiHF840
Vishay Siliconix
RD
VDS
VGS
8.0
6.0
4.0
2.0
0.0
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
25
50
75
100
125
150
TC, Case Temperature (°C)
91070_09
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
0 - 0.5
0.2
0.1
0.05
0.02
0.01
0.1
10-2
10-3
PDM
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-5
10-4
10-3
10-2
0.1
1
10
102
t1, Rectangular Pulse Duration (S)
91070_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
+
RG
VDD
-
VDS
IAS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
www.vishay.com
5
IRF840, SiHF840
Vishay Siliconix
1200
1000
800
ID
3.6 A
5.1 A
Top
Bottom 8.0 A
600
400
200
VDD = 50 V
0
125
Starting T , Junction Temperature (°C)
25
75
100
150
50
91070_12c
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
12 V
0.2 µF
0.3 µF
10 V
+
-
QGS
QGD
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
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6
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
IRF840, SiHF840
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91070.
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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