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SIHF9540STRL-GE3A [VISHAY]

Power MOSFET;
SIHF9540STRL-GE3A
型号： SIHF9540STRL-GE3A
厂家： VISHAY    VISHAY
描述：

Power MOSFET
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IRF9540S, SiHF9540S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
• Surface Mount  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• P-Channel  
• 175 °C Operating Temperature  
• Fast Switching  
• Compliant to RoHS Directive 2002/95/EC  
- 100  
VGS = - 10 V  
RDS(on) ()  
0.20  
Qg (Max.) (nC)  
61  
14  
Q
Q
gs (nC)  
gd (nC)  
29  
Configuration  
Single  
S
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D2PAK (TO-263)  
G
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die sizes up to HEX-4. It  
provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount  
package. The D2PAK (TO-263) is suitable for high current  
applications because of its low internal connection  
resistance and can dissipate up to 2.0 W in a typical surface  
mount application.  
D
G
D
P-Channel MOSFET  
S
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHF9540S-GE3  
IRF9540SPbF  
SiHF9540S-E3  
SiHF9540STRL-GE3a  
IRF9540STRLPbFa  
SiHF9540STL-E3a  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
TC = 25 °C  
TC = 100 °C  
- 19  
- 13  
Continuous Drain Current  
VGS at - 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
- 72  
Linear Derating Factor  
1.0  
0.025  
640  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
EAS  
IAR  
mJ  
A
- 19  
Repetitive Avalanche Energya  
EAR  
15  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
150  
3.7  
- 5.5  
- 55 to + 175  
300d  
T
C = 25 °C  
PD  
W
V/ns  
°C  
dV/dt  
TJ, Tstg  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12).  
c. ISD - 19 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material)  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF9540S, SiHF9540S  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
40  
UNIT  
Maximum Junction-to-Ambient  
(PCB Mount)a  
RthJA  
RthJC  
-
-
-
-
°C/W  
Maximum Junction-to-Case (Drain)  
1.0  
Note  
a. When mounted on 1" square PCB (FR-4 or G-10 material).  
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
Static  
Drain-Source Breakdown Voltage  
VDS  
VDS/TJ  
VGS(th)  
IGSS  
VGS = 0, ID = - 250 μA  
Reference to 25 °C, ID = - 1 mA  
VDS = VGS, ID = - 250 μA  
- 100  
-
-
V
V/°C  
V
VDS Temperature Coefficient  
-
- 0.087  
-
Gate-Source Threshold Voltage  
Gate-Source Leakage  
- 2.0  
-
-
-
-
-
-
- 4.0  
100  
- 100  
- 500  
0.20  
-
VGS  
=
20 V  
-
-
nA  
VDS = - 100 V, VGS = 0 V  
Zero Gate Voltage Drain Current  
IDSS  
μA  
V
DS = - 80 V, VGS = 0 V, TJ = 150 °C  
-
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic  
RDS(on)  
gfs  
VGS = - 10 V  
ID = - 11 Ab  
-
VDS = - 50 V, ID = - 11 A  
6.2  
S
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
Qg  
-
-
-
-
-
-
-
-
-
-
1400  
590  
140  
-
-
-
VGS = 0 V,  
DS = - 25 V,  
f = 1.0 MHz, see fig. 5  
V
pF  
nC  
-
61  
14  
29  
-
ID = - 19 A, VDS = - 80 V,  
see fig. 6 and 13b  
Qgs  
Qgd  
td(on)  
tr  
VGS = - 10 V  
-
-
16  
73  
34  
57  
-
V
DD = - 50 V, ID = - 19 A,  
ns  
R
G = 9.1 , RD = 2.4 , see fig. 10b  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
-
-
D
Between lead,  
Internal Drain Inductance  
LD  
LS  
-
-
4.5  
7.5  
-
-
6 mm (0.25") from  
package and center of  
die contact  
nH  
G
Internal Source Inductance  
S
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
MOSFET symbol  
showing the  
integral reverse  
p - n junction diode  
D
IS  
-
-
-
-
- 19  
- 72  
A
G
Pulsed Diode Forward Currenta  
ISM  
S
Body Diode Voltage  
VSD  
trr  
TJ = 25 °C, IS = - 19 A, VGS = 0 Vb  
-
-
-
-
- 5.0  
260  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Forward Turn-On Time  
130  
0.35  
ns  
nC  
TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb  
Qrr  
ton  
0.70  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width 300 μs; duty cycle 2 %.  
www.vishay.com  
2
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF9540S, SiHF9540S  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
102  
VGS  
Top  
- 15 V  
- 10 V  
- 8.0 V  
- 7.0 V  
- 6.0 V  
- 5.5 V  
- 5.0 V  
25 °C  
175 °C  
Bottom - 4.5 V  
101  
101  
- 4.5 V  
20 µs Pulse Width  
TC = 25 °C  
20 µs Pulse Width  
V
DS = - 50 V  
100  
101  
4
5
6
7
8
9
10  
- VDS, Drain-to-Source Voltage (V)  
91079_01  
91079_03  
- VGS, Gate-to-Source Voltage (V)  
Fig. 1 - Typical Output Characteristics, TC = 25 °C  
Fig. 3 - Typical Transfer Characteristics  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS  
ID = - 19 A  
VGS = - 10 V  
Top  
- 15 V  
- 10 V  
- 8.0 V  
- 7.0 V  
- 6.0 V  
- 5.5 V  
- 5.0 V  
Bottom - 4.5 V  
101  
- 4.5 V  
20 µs Pulse Width  
C = 175 °C  
T
100  
101  
- 60- 40- 20  
0
20 40 60  
100 120140 160  
80 180  
TJ  
,
Junction Temperature (°C)  
- VDS  
,
Drain-to-Source Voltage (V)  
91079_04  
91079_02  
Fig. 2 - Typical Output Characteristics, TC = 175 °C  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF9540S, SiHF9540S  
Vishay Siliconix  
3000  
VGS = 0 V, f = 1 MHz  
Ciss = Cgs + Cgd, Cds Shorted  
Crss = Cgd  
Coss = Cds + Cgd  
2500  
2000  
1500  
1000  
500  
101  
175 °C  
25 °C  
Ciss  
Coss  
Crss  
100  
VGS = 0 V  
5.0  
4.0  
0
100  
101  
0.0  
1.0  
2.0  
3.0  
- VDS, Drain-to-Source Voltage (V)  
- VSD, Source-to-Drain Voltage (V)  
91079_05  
91079_07  
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage  
Fig. 7 - Typical Source-Drain Diode Forward Voltage  
103  
5
20  
ID = - 19 A  
Operation in this area limited  
by RDS(on)  
V
DS = - 80 V  
2
16  
12  
8
102  
5
V
DS = - 50 V  
100 µs  
V
DS = - 20 V  
2
1 ms  
10  
5
10 ms  
2
1
5
4
TC = 25 °C  
TJ = 175 °C  
Single Pulse  
For test circuit  
see figure 13  
2
0
0.1  
5
2
5
2
2
5
2
5
0
10  
20  
30  
40  
50  
60  
102  
103  
0.1  
1
10  
- VDS, Drain-to-Source Voltage (V)  
Fig. 8 - Maximum Safe Operating Area  
91079_08  
QG, Total Gate Charge (nC)  
91079_06  
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage  
www.vishay.com  
4
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF9540S, SiHF9540S  
Vishay Siliconix  
L
VDS  
20  
16  
12  
8
-
D.U.T.  
IAS  
Rg  
+ VDD  
- 10 V  
0.01 Ω  
tp  
Fig. 10a - Switching Time Test Circuit  
4
td(on) tr  
td(off) tf  
0
25  
50  
75  
100  
125  
150  
VGS  
175  
10 %  
TC, Case Temperature (°C)  
91079_09  
Fig. 9 - Maximum Drain Current vs. Case Temperature  
90 %  
VDS  
Fig. 10b - Switching Time Waveforms  
10  
1
D = 0.5  
PDM  
0.2  
0.1  
0.1  
t1  
t2  
0.05  
Notes:  
0.02  
0.01  
Single Pulse  
(Thermal Response)  
1. Duty Factor, D = t1/t2  
2. Peak Tj = PDM x ZthJC + TC  
10-2  
10-5  
10-4  
10-3  
10-2  
0.1  
1
10  
t1, Rectangular Pulse Duration (s)  
91079_11  
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF9540S, SiHF9540S  
Vishay Siliconix  
IAS  
RD  
VDS  
VGS  
D.U.T.  
Rg  
VDS  
-
+
VDD  
VDD  
- 10 V  
tp  
Pulse width ≤ 1 µs  
Duty factor ≤ 0.1 %  
VDS  
Fig. 12a - Unclamped Inductive Test Circuit  
Fig. 12b - Unclamped Inductive Waveforms  
2000  
1600  
1200  
800  
ID  
- 7.8 A  
- 13 A  
Top  
Bottom - 19 A  
400  
VDD = - 25 V  
0
125  
25  
75  
100  
150  
175  
50  
91079_12c  
Starting TJ, Junction Temperature (°C)  
Fig. 12c - Maximum Avalanche Energy vs. Drain Current  
Current regulator  
Same type as D.U.T.  
50 kΩ  
QG  
- 10 V  
12 V  
0.2 µF  
0.3 µF  
-
QGS  
QGD  
V
+
DS  
D.U.T.  
VG  
VGS  
- 3 mA  
Charge  
IG  
ID  
Current sampling resistors  
Fig. 13a - Basic Gate Charge Waveform  
Fig. 13b - Gate Charge Test Circuit  
www.vishay.com  
6
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF9540S, SiHF9540S  
Vishay Siliconix  
Peak Diode Recovery dV/dt Test Circuit  
D.U.T.  
+
Circuit layout considerations  
• Low stray inductance  
• Ground plane  
• Low leakage inductance  
current transformer  
-
+
-
+
-
Rg  
+
-
• dV/dt controlled by Rg  
• ISD controlled by duty factor “D”  
• D.U.T. - device under test  
VDD  
Note  
• Compliment N-Channel of D.U.T. for driver  
Driver gate drive  
P.W.  
Period  
Period  
D =  
P.W.  
VGS = - 10 Va  
D.U.T. lSD waveform  
Reverse  
recovery  
current  
Body diode forward  
current  
dI/dt  
D.U.T. VDS waveform  
Diode recovery  
dV/dt  
VDD  
Re-applied  
voltage  
Body diode forward drop  
Inductor current  
ISD  
Ripple ≤ 5 %  
Note  
a. VGS = - 5 V for logic level and - 3 V drive devices  
Fig. 14 - For P-Channel  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?91079.  
Document Number: 91079  
S11-1051-Rev. C, 30-May-11  
www.vishay.com  
7
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Package Information  
Vishay Siliconix  
TO-263AB (HIGH VOLTAGE)  
A
B
(Datum A)  
3
4
A
A
E
c2  
H
L1  
4
Gauge  
plane  
0° to 8°  
4
B
5
Detail A  
Seating plane  
D
H
L
C
C
A1  
L3  
L4  
Detail “A”  
1
2
3
L2  
Rotated 90° CW  
B
B
scale 8:1  
A
2 x b2  
2 x b  
c
E
M
M
B
0.010  
A
M
0.004  
B
2 x e  
Base  
metal  
5
D1  
4
Plating  
(c)  
b1, b3  
5
c1  
(b, b2)  
Lead tip  
4
E1  
Section B - B and C - C  
Scale: none  
View A - A  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
DIM.  
A
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.38  
MAX.  
4.83  
0.25  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.330  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
DIM.  
D1  
E
MIN.  
6.86  
MAX.  
MIN.  
MAX.  
-
10.67  
-
0.270  
0.380  
0.245  
-
0.420  
-
A1  
b
9.65  
6.22  
E1  
e
b1  
b2  
b3  
c
2.54 BSC  
0.100 BSC  
H
14.61  
15.88  
2.79  
1.65  
1.78  
0.575  
0.625  
0.110  
0.066  
0.070  
L
1.78  
0.070  
L1  
L2  
L3  
L4  
-
-
-
-
c1  
c2  
D
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
ECN: S-82110-Rev. A, 15-Sep-08  
DWG: 5970  
Notes  
1. Dimensioning and tolerancing per ASME Y14.5M-1994.  
2. Dimensions are shown in millimeters (inches).  
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the  
outmost extremes of the plastic body at datum A.  
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.  
5. Dimension b1 and c1 apply to base metal only.  
6. Datum A and B to be determined at datum plane H.  
7. Outline conforms to JEDEC outline to TO-263AB.  
Document Number: 91364  
Revision: 15-Sep-08  
www.vishay.com  
1
AN826  
Vishay Siliconix  
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead  
0.420  
(10.668)  
0.145  
(3.683)  
0.135  
(3.429)  
0.200  
0.050  
(5.080)  
(1.257)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
Document Number: 73397  
11-Apr-05  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product  
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.  
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited  
to the warranty expressed therein.  
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of  
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.  
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website  
or for that of subsequent links.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 09-Jul-2021  
Document Number: 91000  
1

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VISHAY

SIHF9620

 Power MOSFET

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VISHAY

SIHF9620-E3

 Power MOSFET

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VISHAY

SIHF9620S-E3

 TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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VISHAY

SIHF9620S-GE3

 TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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VISHAY

SIHF9620STL

 TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power

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VISHAY

SIHF9620STL-E3

 TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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VISHAY
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