SIHFP22N60K [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHFP22N60K |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Power MOSFET
FEATURES
• Hard Switching Primary or PFS Switch
PRODUCT SUMMARY
VDS (V)
600
Available
• Low Gate Charge Qg Results in Simple Drive
Requirement
R
DS(on) (Ω)
VGS = 10 V
0.24
RoHS*
Qg (Max.) (nC)
150
45
COMPLIANT
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Q
Q
gs (nC)
gd (nC)
76
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Configuration
Single
D
• Enhanced Body Diode dV/dt Capability
• Lead (Pb)-free Available
TO-247
BENEFITS
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP22N60KPbF
SiHFP22N60K-E3
IRFP22N60K
Lead (Pb)-free
SnPb
SiHFP22N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
VGS
30
TC = 25 °C
TC =100°C
22
Continuous Drain Current
VGS at 10 V
ID
14
A
Pulsed Drain Currenta
IDM
88
Linear Derating Factor
2.9
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
380
22
37
EAR
mJ
W
Maximum Power Dissipation
T
C = 25 °C
PD
370
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
15
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 22 A (see fig. 12).
c. ISD ≤ 22 A, dI/dt ≤ 360 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
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1
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
0.24
-
40
-
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthCS
°C/W
0.34
RthJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
600
-
-
-
V
V/°C
-
3.0
-
0.30
-
5.0
100
50
V
VGS
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 13 Ab
VDS = 50 V, ID = 13 Ab
=
30 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
-
-
0.240
-
250
0.280
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
11
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
3570
350
36
4710
92
180
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
V
-
Reverse Transfer Capacitance
-
pF
V
DS = 1.0 V , f = 1.0 MHz
-
Output Capacitance
Coss
V
GS = 0 V
VDS = 480 V , f = 1.0 MHz
VDS = 0 V to 480 V
-
Effective Output Capacitance
Total Gate Charge
Coss eff.
Qg
-
150
45
76
-
ID = 22 A, VDS = 480 V
see fig. 6 and 13b
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
nC
ns
-
Turn-On Delay Time
Rise Time
26
99
48
37
-
VDD = 300 V, ID = 22 A,
R
G = 6.2, VGS = 10 V,
Turn-Off Delay Time
Fall Time
td(off)
tf
-
see fig. 10b
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
IS
-
-
-
-
22
88
D
A
G
Pulsed Diode Forward Currenta
Body Diode Voltage
ISM
VSD
trr
S
TJ = 25 °C, IS = 22 A, VGS = 0 Vb
TJ = 25 °C
-
-
-
-
-
-
-
1.5
890
1010
11
V
590
670
7.2
8.5
26
Body Diode Reverse Recovery Time
ns
TJ = 125 °C
TJ = 25 °C
TJ =1 25 °C
IF = 22 A,
dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge
Qrr
µC
13
Reverse Recovery Current
Forward Turn-On Time
IRRM
ton
TJ = 25 °C
39
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
.
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Document Number: 91208
S-81274-Rev. A, 16-Jun-08
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100.00
10.00
1.00
VGS
15V
12V
10V
TOP
T
= 150°C
J
8.0V
10
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
T
= 25°C
J
0.1
5.0V
0.10
0.01
0.001
V
= 50V
20µs PULSE WIDTH
Tj = 25°C
DS
20µs PULSE WIDTH
0.01
0.1
1
10
100
5.0
6.0
7.0
8.0
9.0
10.0
V
, Drain-to-Source Voltage (V)
V
, Gate-to-Source Voltage (V)
DS
GS
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
3.0
100
10
1
VGS
15V
12V
22A
=
I
D
TOP
10V
2.5
8.0V
7.0V
6.0V
5.5V
2.0
1.5
1.0
0.5
0.0
BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Tj = 150°C
V
= 10V
GS
0.1
0.1
1
10
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Junction Temperature (° C)
J
V
, Drain-to-Source Voltage (V)
DS
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
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3
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
100000
100.0
10.0
1.0
V
C
= 0V,
= C
f = 1 MHZ
+ C C
ds
GS
,
iss
gs
gd
SHORTED
C
= C
rss
gd
10000
1000
100
C
= C + C
oss
ds
gd
T
= 150°C
J
Ciss
Coss
Crss
T
= 25°C
J
V
= 0V
GS
10
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
DS
V
, Source-toDrain Voltage (V)
SD
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
20
OPERATION IN THIS AREA
I
= 22A
V
= 480V
D
LIMITED BY R (on)
DS
DS
VDS= 300V
VDS= 120V
16
12
8
100
100µsec
10
1
1msec
4
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0
0.1
0
40
G
80
120
160
1
10
100
1000
10000
Q
Total Gate Charge (nC)
V
, Drain-toSource Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91208
S-81274-Rev. A, 16-Jun-08
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
RD
VDS
25
20
15
10
5
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
0
10 %
25
50
75
100
125
150
VGS
T
, Case Temperature (° C)
C
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
IAS
I
A
20 V
0.01Ω
t
p
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
www.vishay.com
5
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
800
600
400
200
0
I
D
TOP
9.8A
14A
22A
BOTTOM
25
50
75
100
125
150
Starting T , Junction Temperature
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91208
S-81274-Rev. A, 16-Jun-08
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
D.U.T
•
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
dI/dt
D.U.T. V Waveform
DS
Diode Recovery
dV/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91208.
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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