SIHFR9024TRL-GE3 [VISHAY]
TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power;
| 型号： | SIHFR9024TRL-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：2047K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
- 60
Definition
• Dynamic dV/dt Rating
RDS(on) (Ω)
VGS = - 10 V
0.28
• Repetitive Avalanche Rated
• Surface Mount (IRFR9024, SiHFR9024)
• Straight Lead (IRFU9024, SiHFU9024)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
Qg (Max.) (nC)
Qgs (nC)
19
5.4
11
Qgd (nC)
Configuration
Single
S
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
G
D
D
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU,SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
SiHFR9024-GE3
SiHFR9024TR-GE3a
SiHFR9024TRL-GE3a SiHFR9024TRR-GE3a
SiHFU9024-GE3
IRFR9024PbF
SiHFR9024-E3
IRFR9024
IRFR9024TRPbFa
SiHFR9024T-E3a
IRFR9024TRa
IRFR9024TRLPbFa
SiHFR9024TL-E3a
IRFR9024TRLa
IRFR9024TRRPbFa
SiHFR9024TR-E3a
IRFU9024PbF
SiHFU9024-E3
IRFU9024
Lead (Pb)-free
SnPb
-
-
SiHFR9024
SiHFR9024Ta
SiHFR9024TLa
SiHFU9024
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
LIMIT
- 60
UNIT
VDS
VGS
V
20
T
C = 25 °C
- 8.8
- 5.6
- 35
Continuous Drain Current
V
GS at - 10 V
ID
TC = 100 °C
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.33
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
0.020
300
EAS
IAR
mJ
A
- 8.8
5.0
Repetitive Avalanche Energya
EAR
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
42
2.5
PD
W
V/ns
°C
dV/dt
- 4.5
- 55 to + 150
260d
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 Ω, IAS = - 8.8 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91278
S10-1135-Rev. C, 10-May-10
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1
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
- 60
-
-
V
V/°C
V
VDS Temperature Coefficient
-
- 0.063
-
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.0
-
-
-
-
-
-
- 4.0
100
- 100
- 500
0.28
-
VGS
=
20 V
-
-
nA
VDS = - 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = - 48 V, VGS = 0 V, TJ = 125 °C
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
ID = - 5.3 Ab
-
Ω
VDS = - 25 V, ID = - 5.3 A
2.9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
570
360
65
-
-
-
VGS = 0 V,
DS = - 25 V,
f = 1.0 MHz
V
pF
nC
-
19
5.4
11
-
ID = - 11 A, VDS = - 48 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = - 10 V
-
-
13
68
15
29
-
VDD = - 30 V, ID = - 11 A,
ns
Rg = 18 Ω, RD = 2.5 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
D
MOSFET symbol
Continuous Source-Drain Diode Current
IS
-
-
-
-
- 8.8
- 35
showing the
integral reverse
p - n junction diode
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 8.8 A, VGS = 0 Vb
-
-
-
-
- 6.3
200
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
100
0.32
ns
μC
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb
Qrr
ton
0.64
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91278
S10-1135-Rev. C, 10-May-10
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 -Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91278
S10-1135-Rev. C, 10-May-10
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3
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91278
S10-1135-Rev. C, 10-May-10
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
V
-
DD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on) tr
td(off) tf
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91278
S10-1135-Rev. C, 10-May-10
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5
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
L
IAS
VDS
Vary tp to obtain
required IAS
VDS
D.U.T.
IAS
Rg
-
V
+
DD
VDD
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
-
QGS
QGD
V
+
DS
D.U.T.
VG
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91278
S10-1135-Rev. C, 10-May-10
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
-
+
-
Rg
+
-
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
GS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91278.
Document Number: 91278
S10-1135-Rev. C, 10-May-10
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7
Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
E
b3
E1
L3
D1
D
H
L4
b2
b
A
c2
e
A1
L
L1
c
θ
L2
MILLIMETERS
INCHES
DIM.
E
MIN.
MAX.
6.73
1.77
MIN.
0.252
0.055
MAX.
0.265
0.070
6.40
1.40
L
L1
L2
L3
L4
D
2.743 REF
0.508 BSC
0.108 REF
0.020 BSC
0.89
0.64
6.00
9.40
0.64
0.77
5.21
1.27
1.01
6.22
10.40
0.88
1.14
5.46
0.035
0.025
0.236
0.370
0.025
0.030
0.205
0.050
0.040
0.245
0.409
0.035
0.045
0.215
H
b
b2
b3
e
2.286 BSC
0.090 BSC
A
2.20
0.00
0.45
0.45
5.30
4.40
0'
2.38
0.13
0.60
0.58
-
0.087
0.000
0.018
0.018
0.209
0.173
0'
0.094
0.005
0.024
0.023
-
A1
c
c2
D1
E1
θ
-
-
10'
10'
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
Document Number: 91344
Revision: 15-Sep-08
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1
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4
3
A
E1
E
Thermal PAD
A
4
0.010
M
A B
C
0.25
c2
b4
L2
4
A
θ1
θ2
D1
4
B
C
3
Seating
plane
5
C
B
C
L3
L1
(Datum A)
L
B
A
A1
3 x b2
3 x b
c
View A - A
M
0.010
C A B
0.25
2 x e
Base
metal
5
Plating
(c)
b1, b3
Lead tip
5
c1
(b, b2)
Section B - B and C - C
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
2.18
0.89
0.64
0.65
0.76
0.76
4.95
0.46
0.41
0.46
5.97
MAX.
2.39
1.14
0.89
0.79
1.14
1.04
5.46
0.61
0.56
0.86
6.22
MIN.
0.086
0.035
0.025
0.026
0.030
0.030
0.195
0.018
0.016
0.018
0.235
MAX.
0.094
0.045
0.035
0.031
0.045
0.041
0.215
0.024
0.022
0.034
0.245
DIM.
D1
E
MIN.
5.21
6.35
4.32
MAX.
MIN.
0.205
0.250
0.170
-
6.73
-
-
0.265
-
A1
b
E1
e
b1
b2
b3
b4
c
2.29 BSC
2.29 BSC
L
8.89
1.91
0.89
1.14
0'
9.65
2.29
1.27
1.52
15'
0.350
0.075
0.035
0.045
0'
0.380
0.090
0.050
0.060
15'
L1
L2
L3
θ1
θ2
c1
c2
D
25'
35'
25'
35'
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
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3
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
SIHFR9024TRR-GE3
TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power
VISHAY
SIHFR9110-GE3
TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power
VISHAY
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