SIHFZ20 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHFZ20 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：1841K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFZ20, SiHFZ20
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Extremely Low RDS(on)
50
• Compact Plastic Package
• Fast Switching
R
DS(on) ()
VGS = 10 V
0.10
Qg (Max.) (nC)
17
9.0
• Low Drive Current
• Ease of Paralleling
Q
Q
gs (nC)
gd (nC)
3.0
• Excellent Temperature Stability
• Parts Per Million Quality
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
TO-220AB
DESCRIPTION
The technology has expanded its product base to serve the
low voltage, very low RDS(on) MOSFET transistor
requirements.
Vishay’s highly efficient geometry and
G
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million
quality!
S
D
G
S
N-Channel MOSFET
The transistor also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.
ORDERING INFORMATION
Package
TO-220AB
IRFZ20PbF
SiHFZ20-E3
IRFZ20
Lead (Pb)-free
SnPb
SiHFZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltagea
SYMBOL
VDS
LIMIT
UNIT
50
V
Gate-Source Voltagea
VGS
20
TC = 25 °C
C = 100 °C
15
Continuous Drain Current
VGS at 10 V
ID
T
10
A
Pulsed Drain Currentb
IDM
60
Single Pulse Avalanche Energyc
EAS
5
mJ
W/°C
W
Linear Derating Factor (see fig. 16)
0.32
40
Maximum Power Dissipation (see fig. 16)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
C = 25 °C
for 10 s
PD
TJ, Tstg
- 55 to + 150
°C
300 (0.063" (1.6 mm) from case
Notes
a. TJ = 25 °C to 150 °C
b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting TJ = 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
1
IRFZ20, SiHFZ20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
TYP.
MAX.
80
UNIT
Typical Socket Mount, Junction-to-Ambient
Case-to-Sink, Mounting Surface Flat, Smooth, and Greased
Junction-to-Case
-
1.0
-
°C/W
RthCS
-
RthJC
3.12
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
50
2.0
-
-
-
-
-
-
V
V
4.0
500
250
VGS
=
20 V
nA
VDS > Max. Rating, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = Max. Rating x 0.8, VGS = 0 V,
-
-
1000
T
C = 125 °C
On-State Drain Current
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
ID(on)
RDS(on)
gfs
VGS = 10 V
VGS = 10 V
VDS > ID(on) x RDS(on) max.
ID = 10 A
-
-
-
15
0.10
-
A
S
0.080
6.0
VDS > ID(on) x RDS(on) max., ID = 9.0 A
5.0
Input Capacitance
Ciss
Coss
Crss
-
-
-
560
250
60
860
350
100
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 11
Output Capacitance
V
pF
nC
Reverse Transfer Capacitance
ID = 20 A, VDS = 0.8 max.
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
-
-
-
12
9.0
3.0
17
-
rating, see fig. 18 for test
circuit (Gate charge is
essentially independent of
operating temperature)
VGS = 10 V
-
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
-
-
-
-
15
45
20
15
30
90
40
30
VDD = 25 V, ID = 9.0 A,
Z0 = 50 , see fig. 5b
ns
Turn-Off Delay Time
Fall Time
D
Modified MOSFET
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
3.5
4.5
-
-
symbol showing the
internal device
inductances
nH
G
S
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
Continuous Source-Drain Diode Current
IS
-
-
-
-
15
60
A
G
integral reverse
p - n junction rectifier
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltageb
VSD
trr
TC = 25 °C, IS = 15 A, VGS = 0 V
-
-
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
100
0.4
-
-
ns
μC
TJ = 150 °C, IF = 15 A, dIF/dt = 100 A/μs
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5).
b. Pulse test: Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
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Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
IRFZ20, SiHFZ20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Saturation Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
3
IRFZ20, SiHFZ20
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
IRFZ20, SiHFZ20
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
VDS
tp
VDD
VDS
IAS
Fig. 12a - Clamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
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5
IRFZ20, SiHFZ20
Vishay Siliconix
Fig. 13 - Typical Transconductance vs. Drain Current
Fig. 14 - Breakdown Voltage vs. Temperature
Fig. 16 - Power vs. Temperature Derating Curve
Fig. 15 - Typical On-Resistance vs. Drain Current
Fig. 17 - Gate Charge Test Circuit
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Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
IRFZ20, SiHFZ20
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91340.
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1
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