SIHFZ44STL [VISHAY]

Power MOSFET; 功率MOSFET


型号：	SIHFZ44STL
厂家：	VISHAY
描述：	Power MOSFET 功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总8页 (文件大小：1480K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced Process Technology

PRODUCT SUMMARY

V_DS(V)

Available

• Surface Mount (IRFZ44S, SiHFZ44S)

R_DS(on)(Ω)

V_GS= 10 V

0.028

RoHS*

•

Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)

COMPLIANT

Q_g(Max.) (nC)

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide

variety of applications.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance

in any existing surface mount package. The D²PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

N-Channel MOSFET

The through-hole version (IRFZ44L/SiHFZ44L) is available

for low profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRFZ44SPbF

SiHFZ44S-E3

IRFZ44S

D²PAK (TO-263)

IRFZ44STRRPbF^a

SiHFZ44STR-E3^a

IRFZ44STRR^a

D²PAK (TO-263)

IRFZ44STRLPbF^a

SiHFZ44STL-E3^a

IRFZ44STRL^a

I²PAK (TO-262)

IRFZ44LPbF

SiHFZ44L-E3

IRFZ44L

Lead (Pb)-free

SnPb

SiHFZ44S

SiHFZ44STR^a

SiHFZ44STL^a

SiHFZ44L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage^f

Gate-Source Voltage^f

SYMBOL

LIMIT

UNIT

V_DS

V_GS

Continuous Drain Current^e

Continuous Drain Current

Pulsed Drain Current^{a, e}

Linear Derating Factor

_C= 25 °C

200

1.0

100

3.7

150

4.5

V_GSat 10 V

I_D

T_C= 100 °C

I_DM

W/°C

Single Pulse Avalanche Energy^b

E_AS

P_D

_A= 25 °C

T_C= 25 °C

Maximum Power Dissipation

V/ns

°C

Peak Diode Recovery dV/dt^{c, f}

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature^d)

T_J, T_stg

- 55 to + 175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V; starting T_J= 25 °C, L = 44 µH, R_G= 25 Ω, I_AS= 51 A (see fig. 12).

c. I_SD≤ 51 A, dI/dt ≤ 250 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. Calculated continuous current based on maximum allowable junction temperature.

f. Uses IRFZ44/SiHFZ44 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

www.vishay.com

WORK-IN-PROGRESS

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

(PCB Mounted, steady-state)^a

R_thJA

°C/W

Maximum Junction-to-Case

R_thJC

1.0

Note

a. When mounted on 1” square PCB (FR-4 or G-10 material).

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

V_DS

ΔV_DS/T_J

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

Reference to 25 °C, I_D= 1 mA

V_DS= V_GS, I_D= 250 µA

V/°C

_DSTemperature Coefficient

2.0

0.06

Gate-Source Threshold Voltage

Gate-Source Leakage

4.0

100

V_GS

V_DS= 60 V, V_GS= 0 V

_DS= 48 V, V_GS= 0 V, T_J= 150 °C

V_GS= 10 V

I_D= 31 A^b

V_DS= 25 V, I_D= 31 A^b

20 V

Zero Gate Voltage Drain Current

I_DSS

µA

250

0.028

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs

Input Capacitance

C_iss

C_oss

C_rss

1900

920

V_GS= 0 V,

_DS= 25 V,

f = 1.0 MHz, see fig. 5 ^d

Output Capacitance

Reverse Transfer Capacitance

170

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_g

Q_gs

Q_gd

I_D= 51 A, V_DS= 48 V,

see fig. 6 and 13^b

V_GS= 10 V

Turn-On Delay Time

Rise Time

t_d(on)

t_r

t_d(off)

t_f

110

_DD= 30 V, I_D= 51 A,

r_G= 9.1 Ω, r_D= 0,55 Ω,

see fig. 10^b

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Drain-Source Body Diode Characteristics

L_S

Between lead, and center of die contact

7.5

MOSFET symbol

showing the

integral reverse

p - n junction diode

Continuous Source-Drain Diode Current

Pulsed Diode Forward Current^a

I_S

50^d

200

I_SM

Body Diode Voltage

V_SD

t_rr

T_J= 25 °C, I_S= 51 A, V_GS= 0 V^b

2.5

180

800

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

120

530

T_J= 25 °C, I_F= 51 A, dI/dt = 100 A/µs^{b, d}

Q_rr

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by L_Sand L_D)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

c. Uses IRFZ44/SiHFZ44 data and test conditions.

d. Calculated continuous current based on maximum allowable junction temperature.

www.vishay.com

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

www.vishay.com

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

’

Fig. 8 - Maximum Safe Operating Area

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

r_D

V_DS

V_GS

D.U.T.

r_G

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V_DS

90 %

10 %

V_GS

t_d(on)t_r

t_d(off)t_f

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V_DS

t_p

Vary t_pto obtain

required I_AS

V_DD

D.U.T

r_G

V_DD

V_DS

I_AS

10 V

0.01 Ω

t_p

I_AS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

www.vishay.com

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

Q_G

10 V

12 V

0.2 µF

0.3 µF

Q_GS

Q_GD

V_DS

D.U.T.

V_G

V_GS

3 mA

Charge

I_G

I_D

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Fig. 13a - Basic Gate Charge Waveform

www.vishay.com

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T

• Low leakage inductance

current transformer

r_G

• dV/dt controlled by r_G

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor "D"

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

Period

D =

= 10 V*

D.U.T. I waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. V waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode

forward drop

Inductor current

Ripple ≤ 5 %

* V_GS= 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91293.

Document Number: 91293

S-Pending-Rev. A, 23-Jul-08

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

SIHFZ44STL [VISHAY]

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